Calogic LLC SD5300Y, SD5300N Datasheet
CORPORATION
Quad DMOS Analog Switch Driver
"Improved Performance Over
SD5000 N and SD 5400CY "
SD5300
FEATURES
Low Propagation Time . . . . . . . . . . . . . . . . . . . . . . . 1ns
••
Low On Resistance
••
Low Insertion Loss
••
Low Ca pacitance
••
– Input (Ga te) . . . . . . . . . . . . . . . . . . . . . . . . . . 3.6pF t yp.
– Output. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6pF typ.
– Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6pF typ.
Low Crosstalk . . . . . . . . . . . . . . . . . . . . -107dB @ 4kHz
••
Input Transient Protection
••
APPLICATION
Analog Switch Driver
••
Wi d e B and D ual D iff e r ent i al Amplifi e r s
••
DESCRIPTION
The Calogic SD5300 is a monolithic array of 20V
enhancement-mode DMOS FET analog switch drivers. The
SD5300 is manufactured with implanted high-speed,
high-voltage and low resistance double-diffused MOS
(DMOS) process, and was designed to drive DMOS and other
analog switches. The devices are available in 16-pin plastic
DIP package and in a die form for hybrid applications.
Custom devices ba sed o n SD5 300 ca n also be orde re d.
ORDERING INFORMATION
Part Package Temperature Range
SD5300Y SOIC -55
SD5300N Plastic DIP -55
XSD5300 Sorted Chips in Carrier s -55
FUNCTIONAL BLOCK DIAGRAM SO PIN CONFIGURATION
DUAL IN LINE PACKAGE
PIN CONFI GU RATION
G
1
D
1
G
2
D
2
G
3
D
3
G
4
S
1
SUBSTRATE
S
2
S
3
D
G
S
S
G
N/C
D
1
1
1
2
2
2
1
2
3
4
5
6
7
8
TOP VIEW
TOP VIEW
1
16
D
4
15
N/C
14
G
4
13
S
4
12
S
3
11
G
3
10
N/C
9
D
3
S
Body
G
D
D
G
S
2
2
3
2
4
2
5
3
6
3
7
3
o
C to +125oC
o
C to +125oC
o
C to +125oC
S
14
1
13
NC
G
12
1
D
11
1
D
10
4
G
9
4
S
8
4
CD9
SD
4
4
SUBSTRATE
SD5300
CORPORATION
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL MAX. VALUE UNITS
Breakdown Voltage
Drain-Source
Source-Drain
Drain-Substrate
Source-Substrate
Gate-Source
Gate-Substrate
Gate-Drain
Continuous Drain Current I
V
DS
V
SD
V
DB
V
SB
V
GS
V
GB
V
GD
D
20
20
25
25
25
25/-.3
25
50 mA
V
ABSOLUTE MAXIMUM
PARAMETER SYMBOL MAX. VALUE UNITS
Drain Current I
T emperature Range
Operating
Storage
Power Dissipation
Package
Each Device
Notes:
1. Linear Derating Factor – 10.7m W/
2. Linear Derating Factor – 5.0mW /
D
T
J
T
S
P
D
P
D
-55 to +85
-55 to +150
640 (Note 1)
300 (Note 2)
o
C ab ove 25oC
o
C above 25oC
ELECTRICAL CHARACTERISTIC S (TA = 25oC, unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS CONDITIONS
BV
BV
I
GBS
V
GS(th)
DS
SB
Drain-Source Breakdown Voltage 20 25
Source-Substrate Breakdown
Voltage
20 25 I
ID = 10µA, VGS = VBS = 0
V
= 10µA, VGS = 0, Drain Open
S
Gate-Body Leakage Current 1.0 µAVGB = 25V, VDB = VSB = 0
Gate-Source Threshold Voltage 0.5 2.0 V VDS = VGS, ID = 1.0µA, VSB = 0
50 mA
o
mW
C
r
DS(on)
g
fs
c
(ga+gd+gb)
c
(gd+db)
c
(gs+sb)
c
(dg)
C
T
40 45
Drain-Source ON Resistance
22 25 V
ohms
17 20 V
15 17 V
Common-Source Forward
Transconductance
10 12 mmhos V
Gate Node Capacitance 2.4 3.7
Drain Node Capacitance 1.3 1.7
pF f = 1MHz, V
Source Node Capacitance 3.5 4.5
Reverse Transfer Capacitance 0.3 .7
Cross Talk -107 dB
= 5V, ID = 1mA, VSB = 0
V
GS
= 10V, ID = 1mA, VSB = 0
GS
= 15V, ID = 1mA, VSB = 0
GS
= 20V, ID = 1mA, VSB = 0
GS
= 10V, ID = 20mA, f = 1KHz, VSB = 0
DS
= 10V, VGS = VBS = -15V
DS
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