Calogic LLC SD403BD, SD403CY Datasheet

High Speed DMOS
N-Channel Switch

SD403

CORPORATION

FEATURES

Ultra High Speed Switching . . . . . . . . . . . . . . . . . tr < 1ns

••

Very Low Capacitance. . . . . . . . . . . . . . c

••

CMOS and TTL Compatible Input

••

Low ON Resistance . . . . . . . . . . . . . . . . . 40 ohms typical

••

APPLICATIONS

Switch Dri v e rs

••

Video Sw i tch es

••

Samples and Hold

••

Track and Hold

••

VHF/UHF Amplifie rs

••

PIN CONFIGU R ATIO N

TO-92

0.4pf typica l

rss

DESCRIPTION

The Calogic SD403 is an N-Channel Enhancement-Mode
Lateral DMOS FET. This product has very low capacitance,

< 0.4pf typical ) allowing for high speed switching (tr 1ns).

(c

rss

The SD403 is a high gain device (19mmhos) and has good
performance values for sample and hold circuits, video
switches and switch driver s wh er e lowe r capacitance and high
speed switching are crit ical.

ORDERING INFORMATION
Part Package Temperature Range

o

SD403BD Plastic TO-92 -55 to +125
SD403CY SOT -143 Sur face Mount -55 to +125
XSD403 Sorted Chips in Carriers -55 to +125

SCHEMA TIC DIAGRAM

DRAIN

(2)

GATE

(3)

C

o

C

o

C

CD1-1

D

G

S

GATE (3)

BODY (4)

SOURCE (1)

PRODUCT MARKING

SD403CY SD403

DRAIN (2)

SOT-143

SOURCE

(1)

TO-92

DRAIN

(2)

BODY

(4)

GATE

(3)

SOURCE

(1)

SOT-143

CORPORATION

ABSOLUTE MAXIMUM RATINGS (TA = +25oC unless otherwise note d)

Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . +15V

Gate-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V

+20V

Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V

+20V

Continuous Drain Curre nt . . . . . . . . . . . . . . . . . . . . . . . 50mA

Power Dissipation (at or below T

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . 3.0mW/

Operating Junct ion and Storage

Temp eratur e Range . . . . . . . . . . . . . . . . -55

Source-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V

SD403

= +25oC). . . . . . . . 300m W

A

o

C to +125oC

o

C

ELECTRICAL CHARACTERISTICS (T

= +25oC unless otherwise specified)

A

SYMBOL CHARACTERISTICS MIN TYP MAX UNIT TEST CONDITIONS

STATIC

Drain-Source Breakdown Voltage 15 25 V ID = 1.0µA, VGS =0

BV

DSS

I

D(OFF)

I

GSS

I

D(ON)

V

GS(th)

V

DS(ON)

r

DS(ON)

V

DS(ON)

r

DS(ON)

Drain-Source OFF Leakage Current 1.0 µAVDS = 15V, VGS = 0
Gate-Source Leakage Current 1.0 µAVGS = 20V, VDS = 0
Drain-Source ON Current 80 120 mA VDS = 10V, VGS = 10 V Pulse Test
Gate-Source Threshold Voltage 0.3 1.5 V ID = 1.0µΑ, VDS = V

Drain-Source ON Voltage 140 175 mV

Drain-Source ON Resistance 140 175 ohms
Drain-Source ON Voltage 40 60 mV
Drain-Source ON Resistance 40 60 ohms

= 1mA, VGS = 2.4V

I

D

= 1mA, VGS = 4.5V

I

D

GS

DYNAMIC

= 20 mA VDS = 10V,

I

gfs Common-Source Forward Transconductance 15 19 mS

c

iss

c

oss

c

rss

Common-Source Input Capacitance 4.5 6.0
Common-Source Output Capacitance 2.0 3.0

Common-Source Reverse Transfer Capacitance 0.4 0.6
td(on) Turn ON Delay Time 0.8 1.2
t

r

t

(OFF)

Rise Time 0.9 1.2

Turn OFF Time 1.4

D

f = 1KHz Pulse Test

V

= 10V, VGS = 0

pf

ns

DS

f = 1MHz

= 10V, RL = 680Ω

V

DD

V

= 10V, RG = 51Ω

G(ON)

C

= 1. 5pF

L

SWITCHING TIMES TEST CIRCUIT TEST WAVEF ORM S

V

V

G

510

51

OSCILLOSCOPE

DD

R

L

V

OUT

INPUT PULSE

<_

t 0.5 nSEC

R

Ω

G

Ω

r

PULSE WIDTH - 100 nSEC

SAMPLING OSCILLOSCOPE
t < 0.36 nSEC

r

R > 1M

Ω

in

C < 2.0 pF

in

V

G(on)

V

in

10%

0

t

d(on)

t

on

t

r

V

DD

90%

V

out

~

0V

~

10%

90%

t

d(off)

t

off

t

fall

90%

10%