Calogic LLC SD400BD, SD402BD Datasheet
High-Speed Analog
N-Channel/Enhancement-Mode
DMOS FETS
SD400 / SD402
CORPORATION
FEATURES
Fast switching . . . . . . . . . . . . . . . . . . . . . . . . . . . ton <1ns
••
Low capacitance . . . . . . . . . . . . . . . . . . . C
••
Low threshold . . . . . . . . . . . . . . . . . . . . . . . . . <1.5V max
••
CMOS and TTL Compatible Input
••
APPLICATIONS
Switch Dri v e rs
••
Video Sw i tch es
••
Active Pullups
••
VHF/UHF Amplifie rs
••
PIN CONFIGUR ATION SCHEMA T IC DIAG RAM
TO-92
0.3 pF (typ)
rss
DESCRIPTION
The SD400 and SD402 are N-Channel Enhancement Mode
devices processed utilizing Calogic’s proprietary high speed,
low capacitance lateral DMOS technology. These devices are
excellent switch drivers where low threshold offers the
designer the advantage of CMOS and TTL compatibility with
ultra high switching spe eds.
ORDERING INFORMATION
Part Package Temperature Ra nge
SD400BD Plastic TO-92 -55
SD402BD Plastic TO-92 -55
XSD400 Sorted Chips in Carriers -55
XSD402 Sorted Chips in Carriers -55
GATE
(3)
DRAIN
(2)
o
C to +125oC
o
C to +125oC
o
C to +125oC
o
C to +125oC
CD1-1
SOURCE
(1)
D
G
S
7-74
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TC = +25oC unless otherwise noted)
Drain-Source Voltage
V
DS
SD400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V
V
SD
I
D
SD402 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15V
Gate-Source Voltage. . . . . . . . . . . . . . . . . . . . . -0.3 V
V
GS
+20 V
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . -0.3 V
V
DG
+20 V
SD400 / SD402
Source-Drain Voltage . . . . . . . . . . . . . . . . . . . . -0.3 V
Continuous Drain Curren t . . . . . . . . . . . . . . . . . 50 mA
Power Dissipation (at or below T
Linear Derating Factor. . . . . . . . . . . . . . . . 3.0 mW /
Operating St or age an d
Junction Tempe ra tu re Range . . . . . . -55
= +25oC). . 300mW
C
o
C to +125oC
o
C
ELECTRICAL CHARACTERISTICS (T
SYMBOL CHARACTERISTICS
STATIC
BV
DSS
I
D(OFF)
I
GSS
I
D(ON)
V
GS(th)
V
DS(ON)
r
DS(ON)
V
DS(ON)
r
DS(ON)
DYNAMIC
g
fs
c
iss
c
oss
c
rss
t
d(ON)
t
r
t
(OFF)
Drain-Source Breakdown Voltage 30 35 15 25 V ID = 1.0µA, VGS = 0
Drain-Source OFF Leakage Current 1.0 1.0 µAVDS = 15 V, VGS = 0
Gate-Source Leakage Current 1.0 1.0 µAV
Drain-Source ON Current 50 100 50 100 mA
Gate-Source Threshold Voltage 0.7 1.5 0.7 1.5 V ID = 1.0 µA, VDS = V
Drain-Source ON Voltage 150 250 150 250 mV
Drain-Source ON Resistance 150 250 150 250 ohms
Drain-Source ON Voltage 60 80 60 80 mV
Drain-Source ON Resistance 60 80 60 80 ohms
Common-Source Forward
Transconductance
Common-Source Input Capacitance 4.0 5.0 4.0 5.0
Common-Source Output Capacitance 1.8 2.5 1.8 2.5
Common-Source Reverse Transfer
Capacitance
Turn ON Delay Time 0.7 1.0 0.7 1.0
Rise Time 0.8 1.0 0.8 1.0
Turn OFF Time 12 12
= +25oC unless otherwise noted)
A
SD400 SD402
MIN TYP MAX MIN TYP MAX
8.0 12 8.0 12 mS
0.3 0.5 0.3 0.5
UNIT TEST CONDITIONS
= 20 V, VDS = 0
GS
V
= 10 V, VGS = 10 V
DS
Pulse Test
= 1 mA, VGS = 2. 4 V
I
D
= 1 mA, VGS = 4. 5 V
I
D
I
= 20 mA, VDS = 10 V
D
f = 1 KHz Pulse T est
V
= 10 V, VGS = 0
pF
ns
DS
f = 1 MHz
= 10 V, RL = 680
V
DD
V
= 10 V, RG = 51
G(ON)
C
= 1.5 pF
L
GS
7-75
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