Calogic LLC SD310DE, SD312DE, SD314DE Datasheet

High-Speed Analog
N-Channel DMOS FETs
Improved On -Resistance

SD310 / SD312 / SD314

FEATURES

••

High Input to Output Isol ati on . . . . . . . . . . . . . . . . 120d B

••

Low On Resistance. . . . . . . . . . . . . . . . . 15 Ohms @ 15V

••

Low Feedthr ou g h and Fe edba ck Transien ts

••

Low Capacitance:

— Input (Gate) . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4pF typ.

— Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3pF typ.

— Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3pF typ.

••

No Protection Di ode f rom Gat e to Substrat e for very
high impedanc e appli cat ions

••

Maximum Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . ±40V

APPLICATIONS
SD310:

••

Analog Switch Driver

SD312 and SD314:

••

Analo g Sw it ches

••

High-Speed Di gita l Switches

••

Multiplexers

••

A to D Converters

••

D to A Converters

••

Choppers

••

Sample & Hold

DESCRIPTION

The Calogic SD310 is a 30V analog switch driver without a
built-in protection diode from gate to substrate for use with
SD312 and SD314 DMOS analog switches.

The SD312 is a high performance, high-speed, high-voltage,
and low resistance analog switch capable of switching ±5V
signals. The maximum threshold of 2V permits simple direct
TTL an CMOS dr iving for sma ll application s.

The SD314 is DMOS analog switch capable of switching
±10V analog signals with all other parameters identical to
those of SD312.

All three devices are manufactured with an implanted
high-speed, high-voltage, and low resistance double-diffused
MOS (DMOS) process. SD310, SD312 and SD314 devices
also have no built-in protection diode to enhance perform anc e
in high impedance circuits. The devices are available in
4-lead hermetic TO-72 package and in die form for hybrid
applications. Custom devices based on SD310, SD312 and
SD314 can also be ordered.

ORDERING INFORMATION
Part Package Temperature Range

SD310DE Hermetic TO -72 Pac kage -55

o

C to +125oC

SD312DE Hermetic TO -72 Pac kage -55

o

C to +125oC

SD314DE Hermetic TO -72 Pac kage -55

o

C to +125oC

XSD310 Sorted Chips in Carriers -55

o

C to +125oC

XSD312 Sorted Chips in Carriers -55

o

C to +125oC

XSD314 Sorted Chips in Carriers -55

o

C to +125oC

CORPORATION

SCHEMAT IC DIAGRAM (Top View)

SOURCE

BODY
AND
CASE

GATE

DRAIN

Body is internally connected to the case

1

23

4

CD10-2

TO-72

G

D

C

S

ABSOLUTE MAXIMUM RATINGS

Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Total Device Dissipation at 25

o

C Case Temperature . . . 1.2W

Storage Temperature Ra nge. . . . . . . . . . . . . . -65

o

to +200oC

Lead Temperature (1/ 16" from case for 1 0 sec.). . . . . . 300

o

C

Operating Temperature Ra nge . . . . . . . . . . . -55

o

C to +125oC

P ARAMETER SD310 SD312 SD314 UNIT

V

DS

Drain-to-source +30 +10 +20 V

dc

V

SD

Source-to-drain* +10 +10 +20 V

dc

V

DB

Drain-to-body +30 +15 +25 V

dc

V

SB

Source-to-body +15 +15 +25 V

dc

V

GS

Gate-to-source ±40 ±40 ±40 V

dc

V

GB

Gate-to-body ±40 ±40 ±40 V

dc

V

GD

Gate-to-drain ±40 ±40 ±40 V

dc

SD310 / SD312 / SD314

CORPORATION

SYMBOL PARAMETER

SD310 SD312 SD314

UNITS TEST CONDITIONS

MIN TYP MAX MIN TYP MAX MIN TYP MAX

BREAKDOWN VOLTAGE

BV

DS

Drain-to-source

30 35

V

V

GS

= VBS = 0V, ID = 10µA

10 25 10 25 20 25 V

GS

= VBS = -5V, IS = 10nA

BV

SD

Source-to drain 10 10 20 VGD = VBD = -5V, ID = 10nA

BV

DB

Drain-to-body

15 15 25

VGB = 0V, source OPEN, ID = 10 nA

BV

SB

Source-to-body

15 15 25

VGB = 0V, drain OPEN, IS = 10µA

LEAKAGE CURRENT

I

DS

(OFF) Drain-to-source

110 110

nA

V

GS

= VBS = -5V, VDS = +1 0V

110

V

GS

= VBS = -5V, VDS = +2 0V

I

SD

(OFF) Source-to-drain

110 110

V

GS

= VBD = -5V, VSD = +10V

110

VGS = VBD = -5V, VSD = +20V

I

GBS

Gate 0.1 0.1 0.1 VDB = VSB = 0V, V

GS

= ±40V

V

T

Threshold voltage 0.5 1.0 2 .0 0.5 1.0 2.0 0 .5 1.0 2.0 V VDS = VGS = VT, IS = 1µA, VSB = 0V

r

DS

(ON)

Drain-to-source
resistance

30 50 30 50 30 50

Ω

I

D

= 1.0mA, VSB = 0, VGS = +5V

20 35 20 35 20 35

ID = 1.0mA, VSB = 0, VGS = +10V

15 25 15 15

ID = 1.0mA, VSB = 0, VGS = +15V

SYMBOL PARAMETER

SD310 SD312 SD314

UNITS TEST CONDITIONS

MIN TYP MAX MIN TYP MAX MIN TYP MAX

gfs

Forward
transconductance

15 20 15 20 15 20 mmhos

V

DS

= 10V, VSB = 0V, ID = 20mA,

f = 1kHz
SMALL SIGNAL CAPACITANCES (See capacitance model)
C

(GS+GD+GB)

Gate node

2.4 3.7 2.4 3.7 2.4 3.7

pF

V

DS

= 10V, f = 1MHz

V

GS

= VBS = -15V

C

(GD+DB)

Drain node

1.3 1.7 1.3 1.7 1.3 1.7

C

(GS+SB)

Sourc e node 3.5 4.5 3.5 4.5 3.5 4.5

C

DG

Reverse transfer 0.3 0.7 0.3 0 .7 0 .3 0.7

AC ELECTRICAL CHARACTERISTICS

DC ELECTRICAL CHARACTERISTICS (T

A

= 25oC, unless other specif ied.)