Calogic LLC SD210E, SD212DE, SD214DE Datasheet

CORPORATION

High-Speed Analog

N-Channel DMOS FETs

SD210 / SD212 / SD214

FEATURES

•• High Input to Output Isol ati on . . . . . . . . . . . . . . . . 120dB

•• Low On Resist ance. . . . . . . . . . . . . . . . . . . . . . . . 30 Ohm

•• Low Feedthr o ug h and Fe edba ck Transien ts

•• Low Ca pacitance:

– Input (Gate). . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4pF typ.

– Output. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3pF typ.

– Feedba ck . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3pF typ.

•• No protect ion Di o de from Gate to Sub strat e for V e ry

High Imp edan ce Applications

•• Maximum Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . ±40V

APPLICATIONS
SD210:

•• Analog Switch Driver

SD212 and SD214:

•• Analo g Sw it c h es

•• High-Speed Di gita l Switches

•• Multiplexers

•• A to D Converters

•• D to A Converters

•• Choppers

•• Sample & Hold

SCHEMA TIC DIAGRAM (Top View)

DESCRIPTION

The Calogic SD210 is a 30V analog switch driver without a
built-in protection diode from gate to substrate for use with
SD212 and SD214 DMOS analog switches.

ORDERING INFORMATION
Part Package Temperature Range

o

SD210E Hermetic TO -72 Pac kage -55
XSS210 Sorted Chips in Carriers -55
SD212DE Hermetic TO -72 Pac kage -55
XSD212 Sorted Chips in Carriers -55
SD214DE Hermetic TO -72 Pac kage -55
XSD214 Sorted Chips in Carriers -55

C to +125oC

o

C to +125oC

o

C to +125oC

o

C to +125oC

o

C to +125oC

o

C to +125oC

BODY AND

CASE

4

3

GATE

G

D

1Q-23

TO-72

C

S

CD1-2

SOURCE

DRAIN

1

2

BODY IS INTERNALLY CONNECTED

TO THE CASE

CALOG IC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: [phone], FAX: [phone]

SD210 / SD212 / SD214

CORPORATION

ABSOLUTE MAXIMUM RATINGS

Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Total Device Dissipation at 25

Storage Temperatue Range . . . . . . . . . . . . . -65

Lead Temperature (1/1 6" from case for 10 sec.). . . . . . 300

Operating Temperature Ra nge . . . . . . . . . . . -55

o

C Case Temperature . . . 1.2W

o

C to +200oC

o

C to +125oC

o

C

DC CHARACTERISTICS (TA = 25oC, unless otherwise specified )

SYMBOL P ARAMETER

BREAKDOWN VOLTAGE

BV

BV
BV
BV

DS

SD
DB

SB

Drain-to-Source

Source-to Drain
Drain-to-Body
Source-to-Body 15 15 25 VGB = 0V, drain OPEN, IS = 10µA

LEAKAGE CURRENT

(OFF) Drain-to-Source

I

DS

(OFF) Source-to-Drain

I

SD

I
V

r

GBS

T

DS

(ON)

Gate 0.1 0.1 0.1 VDB = VSB = 0V, V
Threshold Voltage

Drain-to-Source
Resistance

SD210 SD212 SD214

MIN TYP MAX MIN TYP MAX MIN TYP MAX

30 35
10 25 10 25 20 25 V
10 10 20
15 15 25

110 110

110 110 V

0.5 1.0 2.0 0.1 1.0 2.0 0.1 1.0 2.0 V
50 70 50 70 50 70
30 45 30 45 30 45
23 23 23 I
19 19 19
17 17 17

V

DS

V

SD

V

DB

V

SB

V

GS

V

GB

V

GD

PARAME T E R SD210 SD212 SD214 UNIT

Drain-to-Source +30 +10 +20 V
Source-to-Drain +10 +10 +20 V
Drain-to-Body +30 +15 +25 V
Source-to-Body +15 +15 +25 V
Gate-to-Source ±40 ±40 ±40 V
Gate-to-Body ±40 ±40 ±40 V
Gate-to-Drain ±40 ±40 ±40 V

UNITS TEST CONDITIONS

V

= VBS = 0V, ID = 10µA

GS

= VBS = -5V, IS = 10nA

GS

V

VGD = VBD = -5V, ID = 10nA
VGB = 0V, source OPEN, ID = 10 nA

V

= VBS = -5V, VDS = +1 0V

GS

= VBS = -5V, VDS = +2 0V

110

110

V

GS

nA

= VBD = -5V, VSD = +10V

GS

= VBD = -5V, VSD = +20V

V

GS

GS

VDS = VGS = VT, IS = 1µA, VSB = 0V
I

= 1.0mA, VSB = 0, VGS = +5V

D

= 1.0mA, VSB = 0, VGS = +10V

I

D

Ω

= 1.0mA, VSB = 0, VGS = +15V

D

= 1.0mA, VSB = 0, VGS = +20V

I

D

= 1.0mA, VSB = 0, VGS = +25V

I

D

= ±40V

dc
dc
dc
dc
dc
dc
dc

AC ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER

gfs

Forward
Transconductance

SMALL SIGNAL CAPACITANCES

C

(GS+GD+GB)

C

(GD+DB)

C

(GS+SB)

C

DG

Inform at ion furni shed by Calogic is believed to be accurate and reliable. Howe ver, no responsibility is assum ed for its use: nor for any in fring eme nt of pate nts or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent rights of Calogic.

Gate Node
Drain Node
Source Node 3.5 5.5 3.5 5.5 3.5 5.5
Reverse Transfer

SD210 SD212 SD214

MIN TYP MAX MIN TYP MAX MIN TYP MAX

UNITS TEST CONDITIONS

10 15 10 15 10 15 ms

2.4 3.5 2.4 3.5 2.4 3.5

1.3 1.5 1.3 1.5 1.3 1.5

0.3 0.5 0.3 0.5 0.3 0.5

pF

V

= 10V, VSB = 0V,

DS

I

= 20mA, f = 1kHz

D

V

= 10V, f = 1MHz

DS

V

= VBS = -15V

GS

CALO GIC CORPOR ATION, 237 Whitney Place, Fremont, California 94539, Telephone: [phone], FAX: [phone]