Calogic LLC SD211E, SD213DE, SD215DE Datasheet

CORPORATION

High-Speed Analo

N-Channel DMOS FETs

SD211 / SD213 / SD215

FEATURES

•• High Input to Output Isol ati on . . . . . . . . . . . . . . . . 120dB

•• Low On Resist ance. . . . . . . . . . . . . . . . . . . . . . . . 30 Ohm

•• Low Feedthr o ug h and Fe edba ck Transien ts

•• Low Ca pacitance:

– Input (Gate). . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4pF typ.

– Output. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3pF typ.

– Feedba ck . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3pF typ.

•• Built-in Prot ecti on Di ode fro m Gate to Subs trat e

APPLICATIONS
SD211:

•• Analog Switch Driver

SD213 and SD215:

•• Analo g Sw it c h es

•• High-Speed Di gita l Switches

•• Multiplexers

•• A to D Converters

•• D to A Converters

•• Choppers

•• Sample & Hold

SCHEMA TIC DIAGRAM (Top View)

DESCRIPTION

The Calogic SD211 is a 30V analog switch driver with built-in
protection diode from gate to substrate The SD211 is used
with SD213 and SD215 DMOS analog switches.

ORDERING INFORMATION
Part Package Temperature Range

o

SD21 1E Hermetic TO- 72 Package -55
XSS211 Sorted Chips in Carriers -55
SD213DE Hermetic TO -72 Pac kage -55
XSD213 Sorted Chips in Carriers -55
SD215DE Hermetic TO -72 Pac kage -55
XSD215 Sorted Chips in Carriers -55

C to +125oC

o

C to +125oC

o

C to +125oC

o

C to +125oC

o

C to +125oC

o

C to +125oC

BODY AND

CASE

4

3

GATE

G

D

1Q-24

TO-72

C

S

CD1-1

SOURCE

DRAIN

1

2

BODY IS INTERNALLY CONNECTED

TO THE CASE

CA LOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: [phone], FAX: [phone]

SD211 / SD213 / SD215

CORPORATION

ABSOLUTE MAXIMUM RATINGS

Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Total Device Dissipation at 25

Storage Temperatue Range . . . . . . . . . . . . . -65

Lead Temperature (1/1 6" from case for 10 sec.). . . . . . 300

Operating Temperature Ra nge . . . . . . . . . . . -55

o

C Case Temperature . . . 1.2W

o

C to +200oC

o

C to +125oC

o

C

DC CHARACTERISTICS (TA = 25oC, unless otherwise specified )

SYMBOL PARAMETER

BREAKDOWN VOLTAGE

BV

BV
BV
BV

DS

SD

DB
SB

Drain-to-Source

Source-to Drain
Drain-to-Body 15 15 25 VGB = 0V, source OPEN, ID = 10 nA
Source-to-Body

LEAKAGE CURRENT

(OFF) Drain-to-Source

I

DS

(OFF) Source-to-Drain

I

SD

I
V

r

GBS

T

DS

(ON)

Gate 10 10 10 VDB = VSB = 0V, V
Threshold Voltage

Drain-to-Source
Resistance

SD211 SD213 SD215

MIN TYP MAX MIN TYP MAX MIN TYP MAX

30 35
10 25 10 25 20 25 V
10 10 20

15 15 25

110 110

110 110 V

0.5 1.0 2.0 0.1 1.0 2.0 0.1 1.0 2.0 V
50 70 50 70 50 70
30 45 30 45 30 45
23 23 23 I
19 19 19

PARAMETER

V
V
V
V

V

V

V

Drain-to-Source

DS

Source-to-Drain +10 +10 +20 V

SD

Drain-to-Body

DB

Source-to-Body

SB

Gate-to-Source

GS

Gate-to-Body

GB

Gate-to-Drain

GD

110

110

17 I

SD211 SD212 SD215 UNIT

+30 +10 +20 V

+30 +15 +25 V
+15 +15 +25 V

-15

+25

-0.3
+25

-30

+25

-15

+25

-0.3
+25

-15

+25

-25

+30

-0.3
+30

-25

+30

UNITS TEST CONDITIONS

V

= VBS = 0V, ID = 10µA

GS

= VBS = -5V, IS = 10nA

GS

V

VGD = VBD = -5V, ID = 10nA

VGB = 0V, drain OPEN, IS = 10µA

V

= VBS = -5V, VDS = +1 0V

GS

= VBS = -5V, VDS = +2 0V

V

GS

nA

= VBD = -5V, VSD = +10V

GS

= VBD = -5V, VSD = +20V

V

GS

GS

= ±40V
VDS = VGS = VT, IS = 1µA, VSB = 0V
I

= 1.0mA, VSB = 0, VGS = +5V

D

= 1.0mA, VSB = 0, VGS = +10V

I

D

Ω

= 1.0mA, VSB = 0, VGS = +15V

D

= 1.0mA, VSB = 0, VGS = +20V

I

D

= 1.0mA, VSB = 0, VGS = +25V

D

dc
dc
dc
dc

V

dc

V

dc

V

dc

AC ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER

gfs

Forward
Transconductance

SMALL SIGNAL CAPACITANCES

C

ISS

C

OSS

C

RSS

Inform at ion furni shed by Calogic is believed to be accurate and reliable. Howe ver, no responsibility is assum ed for its use: nor for any in fring eme nt of pate nts or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent rights of Calogic.

Gate Node 2.4 3.5 2.4 3.5 2.4 3.5
Drain Node 1.3 1.5 1.3 1.5 1.3 1.5
Source Node

SD211 SD213 SD215

MIN TYP MAX MIN TYP MAX MIN TYP MAX

UNITS TEST CONDITIONS

10 15 10 15 10 15 ms

0.3 0.5 0.3 0.5 0.3 0.5

pF

V

= 10V, VSB = 0V,

DS

I

= 20mA, f = 1kHz

D

V

= 10V, f = 1MHz

DS

V

= VBS = -15V

GS

CA LOGIC CORPORATION, 23 7 Whitney Place, Fremont, California 94539, Telephone: [phone], FAX: [phone]