Calogic LLC M116 Datasheet
CORPORATION
Diode Protected N-Channel
Enhancement Mode MOSFET
General Purpose Amplifier
M116
FEATURES
Low I
••
••
GSS
Integrated Zener Clamp for Gate Protection
PIN CONFIGU R ATION
TO-72
1003Z
C
S
G
D
DEVICE SCHEMATIC
1
2
3
ABSOLUTE MAXIMUM RATINGS
= 25oC unless otherwise specified)
(T
A
Drain to Source V olt age. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate to Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Gate Zener Current . . . . . . . . . . . . . . . . . . . . . . . . . . . ±0.1mA
Storage Temperatur e Ra nge. . . . . . . . . . . . . -65
Operating Temperatur e Ra nge . . . . . . . . . . . -55
Lead Temperature (Soldering, 10se c). . . . . . . . . . . . . +300
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW
Derate above 25
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
o
C . . . . . . . . . . . . . . . . . . . . . . . 2.2mW/oC
o
C to +200oC
o
C to +125oC
o
ORDERING INFORMATION
Part Package Temperature Range
o
M116 Hermetic TO-72 -55
XM1 16 Sorted Chips in Carriers -55
C to +125oC
o
C to +125oC
C
4
ELECTRICAL CHARACTERISTIC S (T
SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS
r
DS(on)
V
GS(th)
BV
DSS
BV
SDS
BV
GBS
I
D(OFF)
I
S(OFF)
I
GSS
C
gs
C
gd
C
db
C
iss
NOTE 1: For design reference only, not 100% tested.
Drain Source ON Resistance
Gate Threshold Voltage 1 5
Drain-Source Breakdown Voltage 30 ID = 1µA, V
Source-Drain Breakdown Voltage
Gate-Body Brea kd own Voltage
Drain Cuttoff Current
Source Cutoff Current 10 VSD = 20V, VGD = VBD = 0
Gate-Body Leakage 100 pA VGS = 20V, VDS = 0
Gate-Source (Note 1) 2.5
Gate-Drain Capacitance (Note 1)
Drain-Body Capacitance (Note 1)
Input Capacitance (Note 1)
0330
= 25oC and VBS = 0 unless otherwise specified)
A
100
200 V
30
30 60
10
2.5
7
10
Ω
V
nA
pF
V
= 20V, ID = 100µA
GS
= 10V, ID = 100µA
GS
V
= VDS, ID = 10µA
GS
= 0
GS
IS = 1µA, VGD = VBD = 0
IG = 10µA, VSB = VDB = 0
VDS = 20V, VGS = 0
V
= VDB = VSB = 0, f = 1MHz
GB
Body Guard ed
VGB = 0, VDB = 10V, f = 1MHz
VGB = 0, VDB = 10V, VBS = 0, f = 1MHz
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