N-Channel JFET
J210 – J212 / SSTJ210 – SSTJ212
CORPORATION
FEATURES
Low Noise
••
Low Leakage
••
High Powe r Gain
••
APPLICATIONS
General Purpose Am plifier s
••
VHF/UHF Amplifie rs
••
Mixers
••
Oscillators
••
PIN CONFIGU R ATION
TO-92
DESCRIPTION
The J210 Series is an N-Channel JFET single device
encapsulated in a TO-92 plastic package well suited for
automated assembly. The device features low leakage,
typically under 2 pA, low noise, under 10 nano volts per
square hertz at 10 hertz and high gain. This series is
excellent for mixer, oscillators and amplifier applications.
ORDERING INFORMATION
Part Package Temperature Range
o
J210-11 Plastic TO-92 Package -55
SSTJ210-11 Plastic SOT-23 -55
C to +135oC
o
C to +135oC
G
S
D
PRODUCT MARKING (SOT-23)
CJ1
1
DRAIN
2
SOURCE
3
GATE
3
2
1
BOTTOM VIEW
SSTJ210 Z10
SSTJ211 Z11
SSTJ212 Z12
J210 – J212 / SSTJ210 – SSTJ212
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Parameter/Test Con di tion Symbol Limit Unit
Gate-Drain Voltage V
Gate-Source Voltage V
Gate Current I
Power Dissipation P
GD
GS
G
D
Power Derating 3.27 mW/
Operating J unct ion Temperatur e T
Storage Temperature T
Lead Temperature (1/16" from case for 10 seconds) T
J
stg
L
-25 V
-25 V
10 mA
360 mW
-55 to 135
-55 to 150
300
o
C
o
C
o
C
o
C
ELECTRICAL CHARACTERISTIC S (T
= 25oC unless otherwise note d)
A
SYMBOL CHARACTERISTCS TYP
STATIC
V
(BR)GSS
V
GS(OFF
I
DSS
I
GSS
I
G
I
D(OFF)
V
GS(F)
Gate-Source Breakdown Voltage -35 -25 -25 -25
) Gate-Source Cut off Voltage -1 -3 -2.5 -4.5 -4 -6 VDS = 15V, ID = 1nA
Saturation Drain Current
2
Gate Reverse Current
Gate Operating Current -1 pA VDG = 10V, ID = 1mA
Drain Cutoff Current 1 pA VDS = 10V, VGS = -8V
Gate-Source Forward Voltage 0.7 V IG = 1mA, VDS = 0V
DYNAMIC
g
fs
g
os
C
iss
C
rss
Common-Source Forward
Transconductance
Common-Source Output
Conductance
Common-Source Input Capacitance 4
Common-Source Reverse
Transfer Capacitance
1
210 211 212
UNIT TEST CONDITIONS
MIN MAX MIN MAX MIN MAX
V
2157201540 mAVDS = 15V, VGS = 0V
-1 -100 -100 -100 pA V
-0.5 nA T
4126127 12 mS
150 200 200 µS
pF
1.5
IG = -1µA, VDS = 0V
= -15V, VDS = 0V
GS
= 125oC
A
V
= 15V, VGS = 0V
DS
f = 1kHz
= 15V, VGS = 0V
V
DS
f = 1MHz
e
n
Equivalent Input Noise Voltage 5 nV/ Hz
NOTES: 1. For design aid only, not subject to production testing.
2. Pulse test; PW = 300µs, duty cycle ≤ 3%.
V
= 15V, VGS = 0V
DS
f = 1kHz