Calogic LLC J110, J109, J108 Datasheet
N-Channel JFET Switch
J108 – J110 / SST108 – SST110
FEATURES
••
Low Cost
••
Automated Insertion Package
••
Low Insertion Loss
••
No Offset or Error Voltages Generated by Closed Switch
Purely Resistive
High Isolat i on Resi sta n ce from Dri ve r
••
Fast Switching
••
Low Noise
APPLICATIONS
••
Analo g Sw it ches
••
Choppers
••
Commutators
••
Low-Noise Audi o Amplif iers
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25oC unless otherwise specified)
Gate-Drain or Gate -So urce Voltage . . . . . . . . . . . . . . . . -25V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperatur e Ra nge. . . . . . . . . . . . . -55
o
C to +150oC
Operating Temperatur e Ra nge . . . . . . . . . . . -55
o
C to +135oC
Lead Temperature (Soldering, 10se c). . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/oC
NOTE: Stresses above those listed under "Absolute Maxi mum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMAT ION
Part Package Temperature Range
J108-110 Plastic TO- 92 -55
o
C to +135oC
XJ108-110 Sorted Chips in Carriers -55oC to +135oC
SST109-110 Plastic SOT -23 -55
o
C to +135oC
CORPORATION
PIN CONFIGU R ATION
TO-92
S
G
D
5018
ELECTRICAL CHARACTERISTIC S (T
A
= 25oC unless otherwise sp ecif ied)
SYMBOL P ARAMETER
108 109 110
UNITS TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
I
GSS
Gate Reverse Current (Note 1) -3 -3 -3 nA VDS = 0V, VGS = -15V
V
GS(off)
Gate-Source Cutoff Voltage -3 -10 -2 -6 -0.5 -4
V
VDS = 5V, ID = 1µA
BV
GSS
Gate-Source Breakdown Voltage -25 -25 -25 VDS = 0V, IG = -1µA
I
DSS
Drain Saturation Current (Note 2) 80 40 10 mA VDS = 15V, VGS = 0V
I
D(off)
Drain Cutoff Current (Note 1) 3 3 3 nA VDS = 5V, VGS = -10V
r
DS(on)
Drain-Source ON Resistance 8 12 18 Ω VDS ≤0.1V, VGS = 0V
C
dg(off)
Drain-Gate OFF Capacitance 15 15 15
pF
VDS = 0,
V
GS
= -10V
(Note 3)
f = 1MHz
C
sg(off)
Source-Gate OFF Capacitance 15 15 15
C
dg(on)
+ C
sg(on)
Drain-Gate Plus Source-Gate
ON Capacitance
85 85 85
V
DS
= VGS = 0
(Note 3)
t
d(on)
Turn On Delay Time 4 4 4
ns
Switching Time Test
Conditions (Note 3)
J107 J109 J110
V
DD
1.5V1.5V1.5V
V
GS(off)
-12V -7V -5V
R
L
150Ω 150Ω 150Ω
t
r
Rise Time 1 1 1
t
d(off)
Turn OFF Delay Time 6 6 6
t
f
Fall Time 30 30 30
NOTES: 1. Approximately doubles for every 10
o
C increase in TA.
2. Pulse test duration = 300µs; duty cycle ≤3%.
3. For design reference only, not 100% tested.
PRODUCT MARKING (SOT-23)
SST108 I08
SST109 I09
SST110 I10
SOT-23
G
S
D
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