Calogic LLC 3N173, 3N172 Datasheet

Diode Protected P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier/Switch

3N172 / 3N173

FEATURES

••

High Input Impedance

••

Diode Protected Gate

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25oC unless otherwise specified)

Drain-Source or Dr ain- Gat e V olta ge

3N172. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

3N173. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Gate Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10µA

Gate Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA

Storage Temperatur e . . . . . . . . . . . . . . . . . . -65

o

C to +200oC

Operating Temperature . . . . . . . . . . . . . . . . . -55

o

C to +150oC

Lead Temperature (Soldering, 10sec). . . . . . . . . . . . . +300

o

C

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW

Derate above 25

o

C . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/oC

NOTE: Stresses above those listed under "Absolute Maxi mum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

ORDERING INFORMATION
Part Package Temperature Range

3N172-73 Hermetic TO-72 -55

o

C to +150oC

X3N172-73 Sorted Chips in Carriers -55

o

C to +150oC

CORPORATION

PIN CONFIGU R ATION

TO-72

G

D

S

C,B

1503Z

DEVICE SCHEMATIC

1

2

0200

3

4

ELECTRICAL CHARACTERISTIC S (TA = 25oC and VBS = 0 unless otherwise specified)

SYMBOL PARAMETER

3N172 3N173

UNITS TEST CONDITIONS

MIN MAX MIN MAX

I

GSS

Gate Reverse Current

-200 -500 pA V

GS

= -20V

-0.5 -1.0 µA

T

A

= +1 25oC

BV

GSS

Gate Breakdown Voltage -40 -125 -30 -125

V

ID = -10µA

BV

DSS

Drain-Source Breakdown Voltage -40 -30 ID = -10µA

BV

SDS

Source-Drain Breakdown Voltage

-40 -30

IS = -10µA, VDB = 0

V

GS(th)

Threshold Voltage

-2.0 -5.0 -2.0 -5.0 V

DS

= VGS, ID = -10µA

-2.0 -5.0 -2.0 -5.0 V

DS

= -15V, ID = -10µA

V

GS

Gate Source Voltage

-3.0 -6.5 -2.5 -6.5

VDS = -15V, ID = -500µA

I

DSS

Zero Gate Voltage Drain Current -0.4 -10

nA

VDS = -15V, VGS = 0

I

SDS

Zero Gate Voltage Source Current -0.4 -10 VSD = -15V, VDB = 0, VGD = 0

r

DS(on)

Drain Source On Resistance

250 350 ohms

VGS = -20V, ID = -100µA

I

D(on)

On Drain Current -5.0 -30 -5.0 -30 mA VDS = -15V, VGS = -10V

3N172 / 3N173

CORPORATION

SMALL-SIGNAL ELECTRICAL CHARACTERISTICS TA = 25oC and Bulk (substrate) Lead Connect ed to Source

SYMBOL P ARAMETER

3N172 3N173

UNITS TEST CONDITIONS

MIN MAX MIN MAX

| y

fs

|

Magnitude of Small-Signal, Common-Source,
Short-Circuit, Forward Transadmittance*

1500 4000 1000 4000 µSV

DS

= -15V, ID = -10mA, f = 1kHz

| y

os

|

Magnitude of Small-Signal, Common-Source,
Short-Circuit, Output Admittance*

250 250 µS

V

DS

= -15V, ID = -10mA, f = 1kHz

C

iss

Small-Signal, Common-Source, Short-Circuit,
Input Capacitance*

3.5 3.5 pF V

DS

= -15V, ID = -10mA, f = 1MHz

C

rss

Small-Signal, Common-Source, Short-Circuit,
Reverse Transfer Capacitance*

1.0 1.0 pF

V

DS

= -15V, ID = -10mA, f = 1MHz

C

oss

Small-Signal, Common-Source, Short-Circuit,
Output Capacitance*

3.0 3.0 pF V

DS

= -15V, ID = -10mA, f = 1MHz

NOISE CHARACTERISTICS

SYMBOL PARAMETER TYPICAL UNITS TEST CONDITIONS

NF Common-Sou r ce Spot Noise Fig ure

1.0 dB

V

DS

= -15V, ID = -1mA, f = 1kHz, RG = 1MΩ

SWITCHING CHARACTERISTI C S TA = 25oC Bulk (substrat e) Lead Con nect ed to Sou rce

SYMBOL PARAMETER

3N172 3N173

UNITS TEST CONDITIONS

MIN MAX MIN MAX

t

d (on)

Turn-On Delay Time* 12 12

ns

VDD = -15V, I

D (on)

= -10mA

t

r

Rise Time* 24 24 RG = RL = 1.4kΩ

t

off

Turn-Off Delay Time*

50 50

See Test Circuit Below

*Registered JEDEC Data

SWITCHING TIME D ETAIL

-0V

-1V

-15V

10%

50% 50%

90%

90%

10%

PULSE
WIDTH

90%

0210

MEASUREMENTS ON SAMPLING OSCILLOSCOPE WITH

INPUT PULSE

rise

t < 2ns
PULSE WIDTH

rise

t < 0.2ns

in

C

in

R

V

IN

V

OUT

4(on)

t

r

t

off

t

IN

-V

> 200ns

< 2.0pF
> 10MΩ

0220

D.U.T.

V

DD

R

L

V

OUT

R

G

50Ω

V

IN

-0.1 -0.5 -1.0 -5.0 -10

SWITCHING TIS - nSEC

SWITCHING TIMES vs. ON-STATE

DRAIN CURRENT

ON-STATE DRAIN CURRENT - (I

D(on)

) - mA

t

d(on)

rise

t

off

G

= RL= 1.4KR

VDD= 15V

0230

1000

500

1.0

t

5.0

100

50

10