Calogic LLC 3N165, 3N164, 3N163, 3N166 Datasheet
Monolithic Dual P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier
3N165 / 3N166
FEATURES
••
Very High Imp edance
••
High Gate Breakd own
••
Low Capacitance
ABSOLUTE MAXIMUM RATINGS (Note 1)
(T
A
= 25oC unless otherwise specified)
Drain-Source or Drain- Gat e Voltage (Note 2)
3N165. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
3N166. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Transient Gat e-Sour ce Voltage (Note 3). . . . . . . . . . . . . ±125
Gate-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±80V
Drain Current (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Tem pe ra tu re. . . . . . . . . . . . . . . . . . . -65
o
C to +200oC
Operating Tem pe ra ture . . . . . . . . . . . . . . . . . -55
o
C to +150oC
Lead Tempera ture (Soldering, 10sec). . . . . . . . . . . . . +300
o
C
Power Dissipation
One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW
Total Derating abo ve 25
o
C. . . . . . . . . . . . . . . . . . 4.2mW/oC
NOTE: Stresses above those listed under "Absolute Maxi mum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part Package Temperature Range
3N165-66 Hermetic TO-99 -55
o
C to +150oC
X3N165-66 Sorted Chips in Carriers -55
o
C to +150oC
CORPORATION
G1
D2
D1
G2
C
TO-99
S
2506
PIN CONFIGU R ATIO N
DEVICE SCHEMATIC
5
1
3
48
7
0190
ELECTRICAL CHARACTERISTIC S (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS
I
GSSR
Gate Reverse Leakage Current 10
pA
VGS = 40V
I
GSSF
Gate Forward Leakage Current
-10 V
GS
= -40V
-25
T
A
= +12 5oC
I
DSS
Drain to Source Leakage Current
-200
VDS = -20V
I
SDS
Source to Drain Leakage Current
-400
VSD = -20V, VDB = 0
I
D(on)
On Drain Current -5 -30 mA VDS = -15V, VGS = -10V
V
GS(th)
Gate Source Threshold Voltage -2 -5
V
VDS = -15V, ID = -10µA
V
GS(th)
Gate Source Threshold Voltage
-2 -5
VDS = VGS, ID = -10µA
r
DS(on)
Drain Source ON Resistance
300 ohm s
VGS = -20V, ID = -100µA
BOTTOM VIEW
S
C
0180
D
2
G2G
1
D
1
ELECTRICAL CHARACTERISTIC S (Continued) (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS
g
fs
Forward Transconductance
1500 3000
µSV
DS
= -15V, ID = -10mA, f = 1kHz
g
os
Output Admittance
300
C
iss
Input Capacitance 3.0
pF
V
DS
= -15V, ID = -10mA, f = 1MHz (Note 4)
C
rss
Reverse Transfer Capacitance 0.7
C
oss
Output Capacitance
3.0
RE(Yfs) Common Source Forward Transconductance
1200 µs
VDS = -15V, ID = -10mA, f = 100MHz (Note 4)
3N165 / 3N166
CORPORATION
MATCHING CHARACTERISTICS 3N165
SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS
Y
fs1
/ Y
fs2
Forward Transconductance Ratio 0.90 1.0 VDS = -15V, ID = -500µA, f = 1kHz
V
GS1-2
Gate Source Threshold Voltage Differential 100 mV VDS = -15V, ID = -500µA
∆V
GS1−2
∆T
Gate Source Threshold Voltage Differential
Change with T emperature
100 µV/
o
C
V
DS
= -15V, IA = -500µA
T
A
= -55oC to +25oC
NOTES: 1. See handling precautions on 3N170 data sheet.
2. Per transistor.
3. Devices must not be t ested at ±125V more than once, nor longer than 300ms.
4. For design reference only, not 100% tested.
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