Calogic LLC 2N5912, 2N5911 Datasheet
CORPORATION
Dual N-Channel JFET
High Frequency Amplifier
2N5911 / 2N5912
FEATURES
Tight Tracking
••
Low Insertion Loss
••
Good Matching
••
PIN CONFIGU R ATION
ABSOLUTE MAXIMUM RATINGS
= 25oC unless otherwise specified)
(T
A
Gate-Drain or Gate-So urce Voltage . . . . . . . . . . . . . . . . -25V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Tem per atur e Ra nge. . . . . . . . . . . . . -65
Operating Tem per at ure R a nge . . . . . . . . . . . -55
Lead Temperature (So ld er ing, 10se c). . . . . . . . . . . . . +300
One Side Both Sides
TO-99
Power Dissipation 367mW 500mW
Derate above 25
NOTE: Stresses above those listed under "Absolute Maxi mum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
o
C3.0mW/
o
C 4.0mW/oC
ORDERING INFORMATION
Part Package Temperature Range
o
2N591 1- 12 Hermetic TO- 99 -55
X2N5912 Sorted Chips in Carriers -55
C to +150oC
o
C to +150oC
CJ1
C
G1
D1
S1
G2
D2
S2
ELECTRICAL CHARACTERISTIC S (TA = 25oC unless otherwise sp ecif ied)
SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS
V
I
GSS
BV
GSS
V
GS(off)
V
GS
I
G
I
DSS
g
fs
g
fs
g
os
g
oss
C
iss
C
rss
e
n
NF Spot Noise Figure (Note 1) 1 dB
Gate Reverse Current
Gate Reverse Breakdown Voltage
Gate-Source Cutoff Voltage -1 -5 VDS = 10V, ID = 1nA
Gate-Source Voltage
Gate Operating Current
Saturation Drain Current (Pulsewidth 300µs, duty cycle ≤3%)
Common-Source Forward Transconductance 5000 10,000
Common-Source Forward Transconductance (Note 1)
Common-Source Output Conductance 100 f = 1kHz
Common-Source Output Conductance (Note 1)
Common-Source Input Capacitance (Note 1) 5
Common-Source Reverse Transfer Capacitance (Note 1)
Equivalent Short Circuit Inp ut Noise Voltage (Note 1)
-25
-0.3 -4
5000 10,000
-100 pA
-250 nA T
-100 pA
-100 nA
740mA
µS
150
1.2
20
pF
nV
√Hz
V
= -15V, VDS = 0
GS
IG = -1µA, VDS = 0
= 10V, ID = 5mA
V
DG
VDS = 10V, VGS = 0V
= 10V, ID = 5mA
V
DG
T
f = 1kHz
f = 100MHz
f = 100MHz
f = 1MHz
f = 10kHz
f = 10kHz
R
o
C to +200oC
o
C to +150oC
= 150oC
A
= 150oC
A
= 100kΩ
G
o
C
2N5911 / 2N5912
ELECTRICAL CHARACTERISTIC S (Continued) (TA = 25oC unless otherwise specified)
CORPORATION
SYMBOL PARAMETER
2N5911 2N5912
MIN MAX MIN MAX
-IG2 | Differen tia l Gat e Curren t 20 20 nA V
| I
G1
I
DSS1
I
DSS2
| V
∆ | V
g
fs1
g
fs2
GS1
-V
GS1
GS2
− V
∆T
Saturation Drain Current Ratio
0.95 1 0.95 1
| Differentia l Gate-Source Voltage 10 15 mV
GS2
Gate-Source Voltage
|
Differential Drift (Measured at
end points, T
and TB)
A
20 40
20 40
Transconductance Ratio 0.95 1 0.95 1 f = 1kHz
NOTE 1: For design reference only, not 100% tested.
UNITS TEST CONDITIONS
= 10V, ID = 5mA TA = 125oC
DG
V
DS
= 10V, V
GS
= 0
(Pulsewidth 300µA, du ty cycle ≤3%)
TA = 25oC
T
= 125oC
µV/
o
C
V
= 10V, ID = 5mA
DG
B
T
= -55oC
A
T
B
= 25oC
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