Calogic LLC 2N5116, 2N5115, 2N5114 Datasheet

P-Channel JFET Switch

2N5114 – 2N5116

GENERAL DESCRIPTION

Ideal for inverting switching or "Virtual Gnd" switching into
inverting input of Op. Amp. No driver is required and ±10VA C
signals can be handled using only +5V logic (TTL or CMOS).

FEATURES

••

Low ON Resistance

••

I

D(off)

<500pA

••

Switches directly from TTL Logic

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25oC unless otherwise noted)

Gate-Drain or Gate -So urce Voltage . . . . . . . . . . . . . . . . . 30V

Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Storage Temperatur e Ra nge. . . . . . . . . . . . . -65

o

C to +200oC

Operating Temperatur e Ra nge . . . . . . . . . . . -55

o

C to +200oC

Lead Temperature (Soldering, 10se c). . . . . . . . . . . . . +300

o

C

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW

Derate above 25

o

C . . . . . . . . . . . . . . . . . . . . . . . . 3m W/oC

NOTE: Stresses above those listed under "Absolute Maxi m um
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

ORDERING INFORMATION
Part Package Temperature Range

2N511 4- 16 Hermetic TO- 18 -55

o

C to +200oC

X2N511 4- 16 Sorted Chips in Carriers -55

o

C to +200oC

CORPORATION

PIN CONFIGU R ATION

S

TO-18

G,C

D

SWITCHING CHARACTERISTI C S (TA = 25oC unless otherwise specified)

SYMBOL PARAMETER

2N5114 2N5115 2N5116

UNITS

MAX MAX MAX

t

d

Turn-ON Delay Time 6 10 12

ns

t

r

Rise Time (Note 2) 10 20 30

t

off

Turn-OFF Delay Time (Note 2) 6 8 10

t

f

Fall Time (Note 2) 15 30 50

ELECTRICAL CHARACTERISTIC S (TA = 25oC unless otherwise sp ecif ied)

SYMBOL P ARAMETER

2N5114 2N5115 2N5116

UNITS TEST CONDITIONS

MIN MAX MIN MAX MIN MAX

BV

GSS

Gate-Source Breakdown Voltage 30 30 30 V IG = 1µA, V

DS

= 0

I

GSS

Gate Reverse Current

500 500 500 pA V

GS

= 20V, VDS = 0

1.0 1.0 1.0 µAT

A

150oC

I

D(off)

Drain Cutoff Current

-500 -500 -500 pA V

DS

= -15V

V

GS

= 12V (2N5114)

V

GS

= 7V (2N5115)

V

GS

= 5V (2N5116)

-1.0 -1.0 -1.0 µA

V

P

Gate-Source Pinch-Off Voltage 5 10 3 6 1 4 V VDS = -15V, ID = -1nA

5508

2N5114 – 2N5116

CORPORATION

ELECTRICAL CHARACTERISTIC S (TA = 25oC unless otherwise sp ecif ied) (Continu ed)

SYMBOL PARAMETER

2N5114 2N5115 2N5116

UNITS TEST CONDITIONS

MIN MAX MIN MAX MIN MAX

I

DSS

Drain Current at Zero Gate Voltage
(Note 1)

-30 -90 -15 -60 -5 -25 mA

V

GS

= -0

V

DS

= -18V (2N5114)

V

DS

= -15V (2N5115)

V

DS

= -15V (2N5116)

V

GS(f)

Forward Gate-Source Voltage -1 -1 -1

V

IG = -1mA, VDS = 0

V

DS(on)

Drain-Source ON Voltage -1.3 -0.8 -0.6

V

GS

= 0

I

D

= -15mA (2N5114)

I

D

= -7mA (2N5115)

I

D

= -3mA (2N5116)

r

DS(on)

Static Drain-Source ON Resistance 75 100 150

Ω

VGS = 0, ID = -1mA

r

ds(on)

Small-Signal Drain-Source ON
Resistance

75 100 150 V

GS

= 0, ID = 0, f = 1kHz

C

iss

Common-Source Input Capacitance
(Note 2)

25 25 25

pF

V

DS

= -15V, VGS = 0,

f = 1mHz

C

rss

Common-Source Reverse Transfer
Capacitance (Note 2)

777

V

DS

= 0

V

GS

= 12V (2N5114)

V

GS

= 7V (2N5115)

V

GS

= 5V (2N5116)

f = 1mHz

NOTES 1. Pulse test; duration = 2ms.

2. For design reference only, not 100% tested.

TEST CONDITIONS

2N5114 2N5115 2N5116

V

DD

-10V -6V -6V

V

GG

20V 12V 8V

R

L

430Ω 910Ω 2KΩ

R

G

100Ω 220Ω 390Ω

I

D(ON)

-15mA -7mA -3mA

V

IN

-12V -7V -5V

INPUT

OUTPUT

-6V

10%

90%

90%

10%

V

IN

r

t

d

t

r

t

10%

OFF

t

0040

V

DS(ON)

V

DD

51Ω

1.2K

1.2K

51Ω

SAMPLING

SCOPE

0.1µF

0050

V

GG

IN

51Ω

7.5K

V

SAMPLING SCOPE

RISE TIME 0.4ns
INPUT RESISTANCE 10MΩ
INPUT CAPACITANCE 1.5pF

R

L

G

R

TYPICAL PERFO RMANCE CHARACTERISTICS

0080

4.0

3.0

2.0

1,000 3,000 10,000 30,000 100,000

10.0

9.0

8.0

7.0

6.0

5.0

V

p

(V)

VDS= 20V
V

GS

= 0

(pulsed)

1.0

0.9

0.8

0.7

0.6

0.5

Vpvs g

fs

gfs(µV)

0070

4.0

3.0

2.0

1 3 10 30 100

10.0

9.0

8.0

7.0

6.0

5.0

V

p

(V)

VDS= 20V
V

GS

= 0

(pulsed)

1.0

0.9

0.8

0.7

0.6

0.5

Vpvs I

DSS

DSS

t (mA)

0060

4.0

3.0

2.0

10 30 100 300 1,000

1.0

0.9

0.8

0.7

0.6

0.5

10.0

9.0

8.0

7.0

6.0

5.0

DS(ON)

r (ohms)

V

p

(V)

V

DS

V

GS

= 0.1V
= 0

V

p DS(ON)

vs r