CORPORATION
N-Channel Enhancement Mode
MOSFET General Purpose
Amplifier/ Switch
2N4351
FEATURES
Low ON Resistance
••
Low Ca pacitance
••
High Gain
••
High Gate Breakd own Volta ge
••
Low Threshold Voltage
••
ABSOLUTE MAXIMUM RATINGS
= 25oC unless otherwise noted)
(T
A
Drain-Source Voltage or Drain-Body V o ltage . . . . . . . . . . 25 V
Peak Gate-Sour ce Voltage (Note 1) . . . . . . . . . . . . . . . ±125V
Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Storage Temperatur e Ra nge. . . . . . . . . . . . . -65
Operating Temperatur e Ra nge . . . . . . . . . . . -55
PIN CONFIGU R ATION
TO-72
Lead Temperature (Soldering, 10se c). . . . . . . . . . . . . +300
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derat e ab o ve 25
NOTE: Stresses above those listed under "Absolute Maxi mum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . 3 mW/oC
ORDERING INFORMATION
Part Package Temperature Range
2N4351 Hermetic TO-72 -55
X2N4351 Sorted Chips in Carriers -55
1003
D
C
G
S
ELECTRICAL CHARACTERISTIC S (TA = 25oC unless otherwise sp ecif ied)
SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS
BV
DSS
I
GSS
I
DSS
V
GS(th)
I
D(on)
V
DS(on)
r
DS(on)
| Forward Transfer Admittance 1000 µSVDS = 10V, ID = 2mA, f = 1kHz
| y
fs
C
rss
C
iss
C
d(sub)
t
d(on)
t
r
t
d(off)
t
f
NOTES: 1. Device must not be tested at ±125V more than once or longer than 300ms.
Drain-Source Breakdown Voltage 25 V ID = 10µA, VGS = 0
Gate Leakage Current 10 pA V
Zero-Gate-Voltage Drain Current 10 nA VDS = 10V, VGS = 0
Gate-Source Threshold Voltage 1 5 V VDS = 10V, ID = 10µA
"ON" Drain Current 3 mA V
Drain-Source "ON" Voltage 1 V ID = 2mA, VGS = 10V
Drain-Source Resistance 300 ohms VGS = 10V, ID = 0, f = 1kHz
Reverse Transfer Capacitance (Note 2) 1.3
Input Capacitance (Note 2) 5.0 VDS = 10V, VGS = 0, f = 1MHz
Drain-Substrate Capacitance (Note 2) 5.0 V
Turn-On Delay (Note 2) 45
Rise Time (Note 2) 65
Turn-Off Delay (Note 2) 60
Fall Time (Note 2) 100
2. For design reference only , not 100% tested.
pF
ns
= ±30V, VDS = 0
GS
= 10V, V
GS
VDS = 0, VGS = 0, f = 1MHz
D(SUB)
= 10V
DS
= 10V, f = 1MHz
o
C to +200oC
o
C to +150oC
o
C to +150oC
o
C to +150oC
o
C
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