Calogic XU444, XU443, U444, U443 Datasheet
N-Channel JFET
Monolithic Dual
U443 / U444
FEATURES
••
High Gain . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS typical
••
Low Leakage . . . . . . . . . . . . . . . . . . . . . . IG < 1pA typical
••
Low Noise
APPLICATIONS
••
Differential Wi de band Amplifiers
••
VHF/UHF Amplifiers
••
T est and Measu rement
••
Multi-Chip/Hybrids
DESCRIPTION
The U443 Series is an N-Channel Monolithic Dual JFET
designed for high speed amplifier circuits. Featuring high gain
( > 6 mS typical), low leakage (< 1pA typical) and low noise
this device is an excellent choice for high performance test
and measurement, wideband amplifiers and VHF/UHF
circuits.
ORDERING INFORMATION
Part Package Temperature Range
U443-4 Hermetic M0-002AG (TO-78) -55
o
C to +150oC
XU443-4 Sorted Chips in Carriers -55
o
C to +150oC
PIN CONFIGU R ATION
CORPORATION
S2
G1
D2
D1
G2
S1
C
TO-78
1
2
3
4
5
BOTTOM VIEW
1
2
3
4
5
6
7
7
6
SOURCE 1
DRAIN 1
GATE 1
CASE/BODY
SOURCE 2
DRAIN 2
GATE 2
CJ1
U443 / U444
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Parameter/Test Con di tion Symbol Limit Unit
Gate-Drain Voltage V
GD
-25 V
Gate-Source Voltage V
GS
-25 V
Gate-Gate Voltage V
GG
±50 V
Forward Gate Cur r ent I
G
50 mA
Power Dissipation (per side) P
D
367 mW
(total) 500 mW
Power Derating (per side) 3 mW/
o
C
(total) 4 mW/
o
C
Operating J unct ion Temperatur e T
J
-55 to 150
o
C
Storage Temperature T
stg
-65 to 200
o
C
Lead Temperature (1/16" from case for 10 seconds) T
L
300
o
C
ELECTRICAL CHARACTERISTIC S (TA = 25oC unless otherwise note d)
SYMBOL CHARACTERISTCS TYP
1
U443 U444
UNIT TEST CONDITIONS
MIN MAX MIN MAX
STATIC
V
(BR)GSS
Gate-Source Breakdown Voltage -35 -25 -25
V
IG = -1µA, VDS = 0V
V
GS(OFF
) Gate-Source Cut off Voltage -3.5 -1 -6 -1 -6 VDS = 10V, ID = 1nA
I
DSS
Saturation Drain Current
2
15630630 mAVDS = 10V, VGS = 0V
I
GSS
Gate Reverse Current
-1 -500 -500 pA V
GS
= -15V, VDS = 0V
-2 nA T
A
= 150oC
I
G
Gate Operating Current
-1 -500 -500 pA V
DG
= 10V, ID = 5mA
-0.3 nA T
A
= 125oC
V
GS(F)
Gate-Source Forward Voltage 0.7 V IG = 1mA, VDS = 0V
DYNAMIC
g
fs
Common-Source Forward Transconductance 6 4.5 9 4.5 9 mS
V
DG
= 10V, ID = 5mA
f = 1kHz
g
os
Common-Source Output Conductance 70 200 200 µS
C
iss
Common-Source Input Capacitance 3
pF
V
DG
= 10V, ID = 5mA
f = 1MHz
C
rss
Common-Source Reverse Transfer Capacitance 1
e
n
Equivalent Input Noise Voltage 4 nV/ Hz
V
DG
= 10V, ID = 5mA
f = 10kHz
MATCHING
| V
GS1-VGS2
| Differential Gate-Source Voltage 6 10 20 mV VDG = 10V, ID = 5mA
∆ | V
GS1-VGS2
|∆TGate-Source Voltage Differential Change with
Temperature
20
µV/
o
C
T = -55 to 25
o
C
V
DG
=10V,
I
D
= 5mA
20 T = 25 to 125
o
C
I
DSS1
I
DSS2
Saturation Drain Current Ratio 0.97 VDS = 10V, VGS = 0V
g
fs1
g
fs2
Transconductance Ratio 0.97
V
DG
= 10V, ID = 5mA
f= 1 kHz
CMRR Common Mode Rejection Ratio 85 dB V
DD
= 5 to 10V, ID = 5mA
NOTES: 1. For design aid only, not subject to production testing.
2. Pulse test; PW = 300µs, duty cycle ≤ 3%.
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