Calogic XU441, XU440, U441, U440 Datasheet
N-Channel JFET
1
2
3
4
5
6
1
2
3
4
5
6
SOURCE 1
DRAIN 1
GATE 1
SOURCE 2
DRAIN 2
GATE 2
BOTTOM VIEW
Monolithic Dual
U440 / U441
CORPORATION
FEATURES
High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS
••
Low Leakage . . . . . . . . . . . . . . . . . . . . . . IG < 1pA typical
••
Low Noise
••
APPLICATIONS
Differential Wi de band Amplifiers
••
VHF/UHF Amplifie rs
••
T est and Measu rement
••
Multi-Chip/Hybrids
••
PIN CONFIGU R ATION
TO-71
DESCRIPTION
The U440 Series is an N-Channel Monolithic Dual JFET
designed for high speed amplifier circuits. Featuring high gain
(> 6 mS typical), low leakage (< 1pA typ) and low noise. This
series is an excellent choice for differ ent ial amplifier des igns.
ORDERING INFORMATION
Part Package Temparature Range
o
U440-1 Hermetic TO-71 Package -55
XU440-1 Sorted Chips in Carriers -55
C to +150oC
o
C to +150oC
CJ1
S2
G1
D2
D1
G2
S1
U440 / U441
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Parameter/Test Con di tion Symbol Limit Unit
Gate-Drain Voltage V
Gate-Source Voltage V
Gate-Gate Voltage V
Forward Gate Cur r ent I
Power Dissipation (per side) P
GD
GS
GG
G
D
(total) 350 mW
Power Derating (per side) 2 mW/
(total) 2.8 mW/
Operating J unct ion Temperatur e T
Storage Temperature T
Lead Temperature (1/16" from case for 10 seconds) T
J
stg
L
ELECTRICAL CHARACTERISTIC S (TA = 25oC unless otherwise note d)
U440 U441
SYMBOL CHARACTERISTCS TYP
STATIC
V
(BR)GSS
) Gate-Source Cut off Voltage -3.5 -1 -6 -1 -6 VDS = 10V, ID = 1nA
V
GS(OFF
I
DSS
I
GSS
I
G
V
GS(F)
Gate-Source Breakdown Voltage -35 -25 -25
Saturation Drain Current
2
Gate Reverse Current
Gate Operating Current
Gate-Source Forward Voltage 0.7 V IG = 1mA, VDS = 0V
DYNAMIC
g
fs
g
os
C
iss
C
rss
e
n
Common-Source Forward Transconductance 6 4.5 9 4.5 9 mS
Common-Source Output Conductance 70 200 200 µS
Common-Source Input Capacitance 3
Common-Source Reverse Transfer Capacitance 1
Equivalent Input Noise Voltage 4 nV/ Hz
MATCHING
| V
∆ | V
GS1-VGS2
| Differential Gate-Source Voltage 6 10 20 mV VDG = 10V, ID = 5mA
GS1-VGS2
|∆TGate-Source Voltage Differential Change with
Temperature
I
DSS1
I
DSS2
g
g
fs1
fs2
Saturation Drain Current Ratio 0.97 VDS = 10V, VGS = 0V
Transconductance Ratio 0.97
CMRR Common Mode Rejection Ratio 85 dB V
NOTES: 1. For design aid only, not subject to production testing .
2. Pulse test; PW = 300µs, duty cycle ≤ 3%.
1
MIN MAX MIN MAX
15630630 mAVDS = 10V, VGS = 0V
-1 -500 -500 pA V
-2 nA T
-1 -500 -500 pA V
-0.3 nA T
20
20 T = 25 to 125
-25 V
-25 V
±50 V
50 mA
250 mW
-55 to 150
-65 to 200
300
UNIT TEST CONDITIONS
IG = -1µA, VDS = 0V
V
= -15V, VDS = 0V
GS
= 150oC
A
= 10V, ID = 5mA
DG
= 125oC
A
V
= 10V, ID = 5mA
DG
f = 1kHz
V
= 10V, ID = 5mA
o
C
DG
f = 1MHz
V
= 10V, ID = 5mA
DG
f = 10kHz
T = -55 to 25
V
= 10V, ID = 5mA
DG
f= 1 kHz
= 5 to 10V, ID = 5mA
DD
pF
µV/
o
C
o
C
o
C
o
C
o
C
o
C
o
C
V
DG
I
= 5mA
D
=10V,
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