Calogic XU309, XU310, XU308, U310, U309 Datasheet

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N-Channel JFET High Frequency Amplifier
U308 – U 310
CORPORATION
FEATURES
High Powe r Gain
••
Low Noise
••
Dynamic Range Gr eat er The 100 dB
••
••
PIN CONFIGU R ATION
(TO-52)
5021
G, C
D
S
ELECTRICAL CHARACTERISTIC S (T
SYMBOL PARAMETER
I
GSS
BV V
GS(off)
I
DSS
V
GS(f)
g
fg
g
ogs
C
gd
C
gs
e
n
GSS
Gate Reverse Current
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage -1.0 -6.0 -1.0 -4.0 -2.5 -6.0 VDS = 10V, ID = 1nA Saturation Drain Current (Note 1) 12 60 12 30 24 60 mA VDS = 10V, VGS = 0 Gate-Source Forward Voltage Common-Gate Forward
Transconductance (Note 1) Common Gate Output Conductance Drain-Gate Capacitance Gate-Source Capacitance 5.0 5.0 5.0 Equivalent Short Circuit
Input Noise Voltage
ABSOLUTE MAXIMUM RATINGS
(T
= 25oC unless otherwise specified)
A
Gate-Drain or Gate-So urce Voltage . . . . . . . . . . . . . . . . -25V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Storage Tem pe ra tu re. . . . . . . . . . . . . . . . . . . -65
Operating Temperatur e Ra nge . . . . . . . . . . . -55
Lead Temperature (Soldering, 10se c). . . . . . . . . . . . . +300
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate above 25
NOTE: Stresses above those listed under "Absolute Maxi mum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION Part Package Temperature Range
U308-10 Hermetic TO- 52 -55 XU308-10 Sorted Chips in Carriers -55
= 25oC unless otherwise sp ecif ied)
A
U308 U309 U310
MIN TYP MAX MIN TYP MAX MIN TYP MAX
-150 -150 -150 pA
-150 -150 -150 nA
-25 -25 -25
1.0 1.0 1.0 V
10 17 10 17 10 17 mS
250 250 250 µS
2.5 2.5 2.5
10 10 10
o
C to +200oC
o
C to +150oC
o
C . . . . . . . . . . . . . . . . . . . . . . . . 4 mW/oC
o
C to +150oC
o
C to +150oC
UNITS TEST CONDITIONS
V
= -15V
GS
VGS = 0 TA = 125oC IG = -1µA, VDS = 0
V
IG = 10mA, VDS = 0
V
= 10V,
pF
nV
√Hz
DS
I
= 10mA
D
V
= -10V,
GS
V
= 10V
DS
VDS = 10V, I
= 10mA
D
f = 1kHz
f = 1MHz (Note 2)
f = 10 0H z (Note 2)
o
C
CORPORATION
ELECTRICAL CHARACTERISTIC S (Continued) (TA = 25oC unless otherwise specified)
U308 – U310
SYMBOL PARAMETER
g
fg
g
ogs
G
pg
NF Noise Figure
NOTES: 1. Pulse test duration = 2ms.
Common-Gate Forward Transconductance
Common-Gate Output Conductance
Common-Gate Power Gain
2. For design reference only, not 100% tested.
U308 U309 U310
MIN TYP MAX MIN TYP MAX MIN TYP MAX
15 15 15 14 14 14 f = 450MHz
0.18 0.18 0.18
0.32 0.32 0.32 14 16 14 16 14 16 10 11 10 11 10 11 f = 450MHz
1.5 2.0 1.5 2.0 1.5 2.0 f = 100MHz
2.7 3.5 2.7 3.5 2.7 3.5
UNITS TEST CONDITIONS
f = 10 0M H z
µS
f = 10 0M H z f = 45 0M H z f = 10 0M H z
f = 45 0M H z
dB
= 10V,
V
DS
I
= 10mA
D
(Note 2)
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