VN2222 Series
N-Channel Enhancement-Mode
MOS T ransistors
VN2222 Series
FEATURES
••
Low r
DS(on)
<7.5Ω
APPLICATIONS
Switching
••
Amplification
••
PIN CONNECTIONS
3
TO-92
(TO-226AA)
ORDERING INFORMATION
Part Package Temperature Range
VN2222LL Plastic TO-92 -55
VN2222LM Plastic TO-237 -55
For sorted chip s in carrier s see 2N7000
BOTTOM VIEW
CORPORATION
o
C to +150oC
o
C to +150oC
BOTTOM VIEW
321
TO-237
321
2
1
CD5
ABSOLUTE MAXIMUM RATINGS (T
SYMBOL PARAMETERS/TEST CONDITIONS
V
DS
V
GS
I
D
I
DM
P
D
, T
T
J
T
L
Drain-Source Voltage 60 60
Gate-Source Voltage ±30 ±30
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Operating Junction & Storage Temp erature Range -55 to 150
stg
Lead Temperature (1/16" from case for 10 sec.) 300
= 25oC unless otherwise noted)
A
T
= 25oC 0.23 0.26
A
= 100oC 0.14 0.16
T
1
A
T
= 25oC0.81
A
= 100oC 0.32 0.4
T
A
THERMAL RESISTANCE RATINGS
SYMBOL THERMAL RESISTANCE
R
thJA
1
Pulse width limite d by maxim um junctio n tem perature.
Junction-to-Ambient 156 125 K/W
1. SOURCE
2. GATE
3. DRAIN
VN2222LL VN2222LM
VN2222LL VN2222LM
1. SOURCE
2. GATE
3. TAB-DRAIN
LIMITS
11
LIMITS
UNITS
UNITS
V
A
W
o
C
CORPORATION
VN2222 Series
SPECIFICATIONS
a
SYMBOL PARAMETER TYP
STATIC
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
r
DS(ON)
Drain-Source Breakdown Voltage 70 60
Gate-Thresho ld Voltage 2.3 0.6 2.5 VDS = VGS, ID = 1mA
Gate-Body Leakage ±100 nA VGS = ±20V , VDS = 0V
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
c
c
1000 750 mA VDS = 10V, VGS = 10V
2.5 7.5 V
4.4 13.5 T
g
FS
g
OS
Forward Transconductance
Common Source Output Conductancec1200 µSVDS = 10V, ID = 0.2A
c
230 100 mS VDS = 10V, ID = 0.5A
DYNAMIC
C
iss
C
oss
C
rss
Input Capacitance 16 60
Output Capacitance 11 25
Reverse Transfer Capacitance 2 5
SWITCHING
LIMITS
b
MIN MAX UNIT TEST CONDITIONS
ID = 100µA, VGS = 0V
V
10
µA
V
= 48V, VGS = 0V
DS
500 T
57.5ΩVGS = 5V, ID = 0. 2A
= 10V, ID = 0.5A
GS
pF V
= 25V, VGS = 0V, f = 1MHz
DS
= 125oC
J
= 125oC
J
t
t
ON
OFF
Turn-On Time 7 10
Turn-Off Time 7 10
Notes:
a. T
= 25oC unless otherwise noted.
A
b. For design aid only, not subject to production testing.
c. Pulse test; PW = ≤300µS, du ty cycle ≤2%.
= 15V, RL = 23Ω, ID = 0.6A
V
DD
V
= 10V, RG = 25Ω
ns
GEN
(Switching time is essentially independent of
operatin g tem p era ture)