Calogic XSST215, XSST213, XSST211, SST213, SST211 Datasheet
...
F AST DMOS FET Swit ches
N-Channel Enhancement-Mode
SST211 / SST213 / SST215
FEATURES
High Speed Switching. . . . . . . . . . . . . . . . . . . . t
••
Low Capaci t a nce . . . . . . . . . . . . . . . . . . . . . 2.4pF typical
••
Low ON Resistance . . . . . . . . . . . . . . . . . . . . 50Ω typycal
••
High Gain
••
Surface Mou nt Package
••
APPLICATIONS
Ultra High Speed Analog Switchin g
••
Sample and Hold
••
Multiplexers
••
High Gai n Am pl i fie rs
••
d(ON)
1ns
DESCRIPTION
Designed for audio, video and high frequency applications,
the SST211 Series is a high speed, ultra low capacitance
SPST analog switch. Utilizing Calogic’s proprietary DMOS
processing the SST211 Series features an integrated zener
diode designed to protect the gate from electrical over stress.
ORDERING INFORMATION
Part Package Temperature Range
SST211 SOT-143 Surface Mount -55
SST213 SOT-143 Surface Mount -55
SST215 SOT-143 Surface Mount -55
XSST21 1 Sorted Chips in Carriers -55
XSST213 Sorted Chips in Carriers -55
XSST215 Sorted Chips in Carriers -55
CORPORATION
o
C to +125oC
o
C to +125oC
o
C to +125oC
o
C to +125oC
o
C to +125oC
o
C to +125oC
PIN CONFIGUR ATION SCHEMA T IC DIAG RAM
3
2
GATE
(3)
CD1-1
4
1
PRODUCT MARKING
SST211 211
SST213 213
SST215 215
DRAIN
(2)
BODY
(4)
SOURCE
(1)
SST211 / SST213 / SST215
CORPORATION
ABSOLUTE MAXIMUM RATINGS (Tc = +25oC unless otherwise noted)
Paramet er
Breakdown Voltages SST211 SST213 SST215 Unit
V
DS
V
SD
V
DB
V
SB
V
GS
V
GB
V
GD
I
Continous Drain Current . . . . . . . . . . . . . . . . . . . . . 50mA TjOperating Junction Tem p erat ure Rang e . . -55 to +125oC
D
P
Power Dissipation (at or below Tc = +25oC) . . . . 360mW TSStorage Temper ature Ran ge . . . . . . . . . . . -55 to +150oC
T
Linear Derating Factor3.6mW/
ELECTRICAL CHARACTERISTICS (Tc = +25oC unless otherwise note d)
+30 +10 +20 V
+10 +10 +20 V
+30 +15 +25 V
+15 +15 +25 V
-15 -15 -25 V
+25 +25 +30 V
-0.3 -0.3 -0.3 V
+25 +25 +30 V
-30 -15 -25 V
+25 +25 +30 V
o
SYMBOL CHARACTERISTICS
SST211 SST213 SST215
MIN TYP MAX MIN TYP MAX MIN TYP MAX
STATIC
B
VDS
B
VSD
B
VDB
B
VSB
I
D(OFF)
I
S(OFF)
I
GBS
V
GS(th)
r
ds(on)
Drain-Source
Breakdown Voltage
Source-Drain Breakdown Voltage 10 10 20 IS = 10nA, VGD = VBD = -5V
Drain-Body
Breakdown Voltage
Source-Body
Breakdown Voltage
Drain-Source
OFF Current
Source-Drain
OFF Current
Gate-Body
Leakage Current
Gate Threshold Voltage 0.5 1.0 2.0 0.1 2.0 0.1 1.0 2.0 V VDS = VGS, ID = 1µA, VSB = 0
Drain-Source
1
ON Resistance
30 35
10 25 10 25 20 25 I
15 15 25
15 15 25 I
0.2 10 0.2 10
0.6 10 0.6 10 V
50 70 50 70 50 70
30 45 30 45 30 45 V
DYNAMIC
g
fs
C
(gs + gd + gb)
C
(gd + db)
C
(gs + sb)
C
(dg)
t
d(ON)
t
r
t
(OFF)
Common-Source
Foward Transcond.
Gate Node Capacitance 2.4 3.5 2.4 3.5 2.4 3.5
Drain Node Capacitance 1.3 1.5 1.3 1.5 1.3 1.5
Source Node Capacitance 3.5 4.0 3.5 4.0 3.5 4.0
Reverse Transfer Capacitance 0.3 0.5 0.3 0.5 0.3 0.5
Turn ON Delay Time 0.7 1.0 0.7 1 .0 0.7 1.0
Rise Time 0.8 1.0 0.8 1.0 0.8 1.0
Turn OFF Time 10 10 10
1
10 12 10 12 10 12 mS
NOTE 1: Pulse Test, 80 Sec, 1% Duty Cycle
Typical Performance Cha racteri sti cs: See SD211-215 Series
10 10
UNIT TEST CONDITIONS
V
0.2 10 V
nA
0.6 10 V
µA
10 V
ohm s
pF
ns
= 10µA, VGS = VBS = 0
I
D
= 10nA, VGS = VBS = -5V
D
I
= 10nA, VGB = 0 Source
D
OPEN
= 10µA, VGB = 0 Drain OPEN
S
= 10V
V
DS
= 20V
DS
= 10V
SD
= 20V
SD
= 25V
V
GB
= 30V
GB
= 5V
V
GS
= 10V
GS
V
= 10V, ID = 20mA
DS
f = 1KHz, V
V
= 10V
DS
V
= VBS = -15V
GS
SB
= 0
= VBS = -5V
V
GS
= VBD = -5V
V
GD
= VSB = 0
V
DB
I
= 1mA
D
V
= 0
SB
f = 1MHz
V
= 5V, V
DD
R
= 680, RG = 51
L
G(ON)
= 10V
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