Calogic SST201, SST201, SST202, SST202, SST203 Schematic [ru]

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N-Channel JFET General Purpose Amplifier
J201 – J204 / SST201 – SST204
CORPORATION
FEATURES
High Input Impedance
••
Low I
••
GSS
= 25oC unless otherwise specified)
(T
A
Gate-Source or Gate-Dr ain Voltage . . . . . . . . . . . . . . . . -40V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
PIN CONFIGU R ATION
Storage Temperatur e Ra nge. . . . . . . . . . . . . -55
Operating Temperatur e Ra nge . . . . . . . . . . . -55
Lead Temperature (Soldering, 10se c). . . . . . . . . . . . . +300
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
SOT-23
G
TO-92
D
S
Derate above 25
NOTE: Stresses above those listed under "Absolute Maxi mum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
5010
PRODUCT MARKING (SOT-23)
G
S
D
SST201 A01 SST202 A02 SST203 A03 SST204 A04
Part Package Temperature Range
J201-204 Plastic TO- 92 -55 SST201-204 Plastic SOT - 23 -55 For Sorted Chips in Carr iers see 2N4338 series.
ELECTRICAL CHARACTERISTIC S (TA = 25oC unless otherwise sp ecif ied)
SYMBOL PARAMETER
I
GSS
V
GS(off)
BV
I
DSS
I
G
g
fs
g
os
C
iss
C
rss
e
n
NOTES: 1. Approximately doubles for every 10
Gate Reverse Current (Note 1)
Gate-Source Cuto ff Voltage
Gate-Source Brea kd own
GSS
Voltage Saturation Drain Current
(Note 2) Gate Current (Note 1) -10 -10 -10 -10 pA VDG = 20V, ID = I Common-Source Forward
Transconductance (Note 2) Common-So urce Ou tput
Conducta nce Common-So urce Inp ut
Capa ci tance Common-So urce Reverse
Transfer Capacitance Equivalent Short-Circuit
Input Noise Voltage
2. Pulse test duration = 2ms.
3. For design reference only, not 100% tested.
201 202 203 204
MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
-100 -100 -100 -100 pA V
-0.3 -1.5 -0 .8 -4.0 -2.0 -10.0 -0.3 -2.0
-40 -40 -40 -25 V
0.2 1.0 0.9 4.5 4.0 20 0.2 1.2 3.0 mA V
500 1,000 1,500 500 1,500
1 3.5 10 2.5
44 4 4
11 1 1
55 5 10
o
C increase in TA.
o
C to +150oC
o
C to +135oC
o
C . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/oC
o
C to +135oC
o
C to +135oC
UNITS TEST CONDITIONS
= 0, VGS = -20V
DS
V
µs
pF
nV
√Hz
VDS = 20V, I
= 0, IG = -1µA
DS
= 20V, VGS = 0
DS
V
= 20V,
DS
V
= 0
GS
VDS = 10V, V
= 0
GS
= 10nA
D
DSS(min)
f = 1kHz
f = 1MHz (Note 3)
f = 1kHz (Note 3)
o
C
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