N-Channel JFET
General Purpose Amplifier
J201 – J204 / SST201 – SST204
CORPORATION
FEATURES
High Input Impedance
••
Low I
••
GSS
ABSOLUTE MAXIMUM RATINGS
= 25oC unless otherwise specified)
(T
A
Gate-Source or Gate-Dr ain Voltage . . . . . . . . . . . . . . . . -40V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
PIN CONFIGU R ATION
Storage Temperatur e Ra nge. . . . . . . . . . . . . -55
Operating Temperatur e Ra nge . . . . . . . . . . . -55
Lead Temperature (Soldering, 10se c). . . . . . . . . . . . . +300
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
SOT-23
G
TO-92
D
S
Derate above 25
NOTE: Stresses above those listed under "Absolute Maxi mum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
5010
PRODUCT MARKING (SOT-23)
G
S
D
SST201 A01
SST202 A02
SST203 A03
SST204 A04
Part Package Temperature Range
J201-204 Plastic TO- 92 -55
SST201-204 Plastic SOT - 23 -55
For Sorted Chips in Carr iers see 2N4338 series.
ELECTRICAL CHARACTERISTIC S (TA = 25oC unless otherwise sp ecif ied)
SYMBOL PARAMETER
I
GSS
V
GS(off)
BV
I
DSS
I
G
g
fs
g
os
C
iss
C
rss
e
n
NOTES: 1. Approximately doubles for every 10
Gate Reverse Current
(Note 1)
Gate-Source Cuto ff
Voltage
Gate-Source Brea kd own
GSS
Voltage
Saturation Drain Current
(Note 2)
Gate Current (Note 1) -10 -10 -10 -10 pA VDG = 20V, ID = I
Common-Source Forward
Transconductance (Note 2)
Common-So urce Ou tput
Conducta nce
Common-So urce Inp ut
Capa ci tance
Common-So urce Reverse
Transfer Capacitance
Equivalent Short-Circuit
Input Noise Voltage
2. Pulse test duration = 2ms.
3. For design reference only, not 100% tested.
201 202 203 204
MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
-100 -100 -100 -100 pA V
-0.3 -1.5 -0 .8 -4.0 -2.0 -10.0 -0.3 -2.0
-40 -40 -40 -25 V
0.2 1.0 0.9 4.5 4.0 20 0.2 1.2 3.0 mA V
500 1,000 1,500 500 1,500
1 3.5 10 2.5
44 4 4
11 1 1
55 5 10
o
C increase in TA.
o
C to +150oC
o
C to +135oC
o
C . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/oC
o
C to +135oC
o
C to +135oC
UNITS TEST CONDITIONS
= 0, VGS = -20V
DS
V
µs
pF
nV
√Hz
VDS = 20V, I
= 0, IG = -1µA
DS
= 20V, VGS = 0
DS
V
= 20V,
DS
V
= 0
GS
VDS = 10V,
V
= 0
GS
= 10nA
D
DSS(min)
f = 1kHz
f = 1MHz
(Note 3)
f = 1kHz
(Note 3)
o
C