CALLM ESAC83M-004 Datasheet
ESAC83M-004 (20A)
(40V / 20A )
SCHOTTKY BARRIER DIODE
Features
Insulated package by fully molding
Low VF
Super high speed switching
High reliability by planer design
Applications
High speed power switching
Outline drawings, mm
±0.2
±0.3
21.5
20 Min
5.5
+0.2
0.6
1. Gate
2. Drain
3. Source
3.2
3.5
+0.3
±0.2
2.1
5.45
±0.3
±0.2
15.5
±0.3
1.6
1.1
5.45
ø3.2
±0.2
±0.3
5.5
9.3
±0.2
2.3
±0.3
+0.2
—0.1
±0.2
±0.3
JEDEC
EIAJ
Connection diagram
1
2
3
Maximum ratings and characteristics
Absolute maximum ratings
Item
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Average output current
Surge current
Operating junction temperature
Storage temperature
Symbol
RRM
V
VRSM
Io
IFSM
Tj
Tstg
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
tw=500ns, duty=1/40
Square wave, duty=1/2
Tc=79°C
Sine wave
10ms
Conditions
Rating
40
48
20*
120
-40 to +150
-40 to +150
Unit
V
V
A
A
°C
°C
* Average forward current of centertap full wave connection
Max.
Unit
Forward voltage drop
Reverse current
Thermal resistance
VFM
IRRM
Rth(j-c)
I
FM=8A
VR=VRRM
Junction to case
0.55
15
2.5
V
mA
°C/W
(40V / 20A )
Characteristics
ESAC83M-004 (20A)
IF
[A]
Forward characteristics
50
30
10
5
3
1
0 0.2 0.4 0.6 0.8 1.0 1.2
V
F [V]
Forward power dissipation
7.5
10
IR
1
[mA]
0.1
0.01
Reverse characteristics
0 10 20 30 40 50 60 70
V
R [V]
Reverse power dissipation
20
16
W
[W]
Tc
[°C ]
F
5.0
2.5
0
0 5 10 15
Io [A]
Output current-case temperature
140
120
100
WR
[W]
Cj
[pF]
12
8
4
0
0 10 20 30 40 50
VR [V]
Junction capacitance characteristics
3000
1000
500
80
60
0 2 4 6 8 10 12 14 16 18 20
Io [A]
300
100
5 10 30 50 100
R [V]
V
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