CALLM ESAC33M-N, ESAC33M-D, ESAC33M-C Datasheet
10.5
Max.
Ø3.2
+0.2
5.08
2.54
0.8
1.2
17.0
±0.3
3.7
13.0
Min.
4.7
4.5
Max.
2.0
2.7
0.4
-0.1
6.0
ESAC33M(C,N,D) (8A) (200V / 8A)
FAST RECOVERY DIODE
Outline drawings, mm
Features
Insulated package by fully molding
High voltage by mesa design
High reliability
Applications
High speed switching
Maximum ratings and characteristics
Absolute maximum ratings
Item
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Average output current
Surge current
Operating junction temperature
Storage temperature
Symbol
V
RRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
30
-40 to +150
-40 to +150
Unit
V
V
A
A
°C
°C
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Reverse recovery time
Thermal resistance
Symbol
VFM
IRRM
t rr
Rth(j-c)
Conditions
IFM=2.0A
VR=VRRM
IF=0.1A, IR=0.1A
Junction to case
Max.
1.4
500
100
3.5
Unit
V
µA
ns
°C/W
Square wave, duty=1/2, Tc=95°C
Sine wave 10ms
Rating
-02
200
200
8*
Connection diagram
*Average forward current of centertap full wave connection
ESAC33M- C
ESAC33M- N
ESAC33M- D
1
1
1
2
2
2
3
3
3
JEDEC
EIAJ SC-67
ESAC33M(C,N,D)(8A)
(200V / 8A )
Characteristics
Forward characteristics
V
F [V]
Reverse characteristics
V
R [V]
IF
[A]
IR
[µA]
Surge capability
I
FSM
[A]
Forward power dissipation
I
o [A]
W
F
[W]
0 100 200 300
0 1 2 3 4 5 6
10
5
3
1
0.5
0.1
10
1.0
0.1
0.01
0.005
Junction capacitance characteristics
Cj
[pF]
V
R [V]
Output current-case temperature
12
10
8
6
4
2
0
Tc
[°C]
0 2 4 6 8 10
Io [A]
100
50
30
10
5
3
5 10 30 50 100
1 3 5 10 30
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
30
10
5
3
1
140
120
100
80
60
[time] (at 50Hz)
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