California Micro Devices SN74S1051 Datasheet
CALIFORNIA MICRO DEVICES
D01
2
D06
7
D02
3
D07
10
D03
4
D08
11
D04
5
D09
12
D11
14
D05
6
D10
13
D12
15
8
GND9GND
116
VV
DD DD
12-BIT SCHOTTKY BARRIER DIODE BUS TERMINATOR
SN 74S1051
Features
24 integrated diodes in a single package
offers 12 channel, dual rail clamping action
Provides proper bus termination independent of
external line or card loading conditions
Applications
Local high speed bus termination for all popular
RISC and embedded microprocessor applications
High speed memory and SDRAM memory
bus termination
Schottky diode technology; excellent forward
voltage and reverse recovery characteristics
Enhanced performance over existing device
16-pin SOIC package
Product Description
Reflections on high speed data lines lead to undershoot and overshoot disturbances which may result in improper
system operation. Resistor terminations, when used to terminate high speed data lines, increase power consumption
and degrade output (high) levels resulting in reduced noise immunity. Schottky diode termination is the best overall
solution for applications in which power consumption and noise immunity are critical considerations.
This integrated Schottky diode network provides very effective termination performance for high speed data lines
under variable loading conditions. The device supports up to 12 terminated lines per package each of which can
be simultaneously clamped to both ground and power supply rail.
SCHEMATIC CONFIGURATION
©1998 California Micro Devices Corp. All rights reserved.
®
is a registered trademark and PAC is a trademark of California Micro Devices.
P/Active
©1998 California Micro Devices Corp. All rights reserved.
4 / 98
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215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com
215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com
C0220298D
1
CALIFORNIA MICRO DEVICES
SN 74S1051
STANDARD SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Rating
Supply Voltage V
Channel clamp current (continuous) I
Operating Temperature 0
Storage Temperature Tstg -65
DD -0.3V to +7V
clamp ±50mA
O
C to 70OC
O
C to +150OC
Package Power Rating 625mW, max.
The absolute maximum ratings are limiting values, to be applied individually, beyond which the device may be permanently damaged. Functional
operation under any of these conditions is not guaranteed. Exposing the device to its absolute maximum rating may
affect its reliability.
DIODE CHARACTERISTICS (TA = 0O to 70OC)
Parameter Conditions Min Typ Max
Diode foward voltage To V
Reverse Recovery Time (See Note 1) I
Channel leakage 0 ≤ V
Input Capacitance f = 1 MHz, V
DD IF = 16 mA 0.55V 0.70V
I
F = 50 mA 0.55V 0.70V 0.90V
From GND I
F = 50mA (estimated) <400pS
IN ≤ VDD 0.1µA 5µA
IN = 2.5V, TA = 25
F = 16 mA 0.50V 0.65V
I
F = 50 mA 0.50V 0.65V 0.85V
O
C, VDD = 5.0V 5pF
ESD Protection MIL-STD-883, Method 3015 4KV
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egakcaPrebmuNtraPgniredrO
sniPelytSsebuTleeR&epaTgnikraMtraP
61worraNCIOST/1501S47NSR/1501S47NS1501S47NS
Note 1:
The test circuit depicts the Schottky diodes in their typical application. The impact of a reverse recovery time is measured
using a narrow pulse with 670- pS rise and fall times. This pulse propagates down a 60 cm, 54 ohm strip line fabricated
on a multi-layer, controlled impedance printed circuit board. In testing the ground clamp diode, the negative going edge
of the pulse causes a reflection which forces the diode under test to become forward biased. The positive going edge of
the pulse attempts to pull this diode out of forward conduction. A reverse recovery phenomenon would cause a delay
between the known arrival time of the positive edge and the observed edge due to the time it takes for the forward biased
diode to actually become reversed biased. In this measurement, however, there is no observable difference and therefore
no delay for the positive edge due to the presence of the diode. The waveforms are adjusted to individually test the
ground and V
DD clamps. See test circuit.
ABT16244A
Pulse
Generator
Z,L
0
V
DD
Diode
under
test
Test Circuit. Line length, pulse width and duty cycle are selected such as that only one reflection is involved
in the measurement.
©1998 California Micro Devices Corp. All rights reserved.
2
215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com
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