California Micro Devices CMV1010Y Datasheet

CALIFORNIA MICRO DEVICES

MICROPOWER RRO Operational Amplifier

CMV1010

Features

• Tiny SOT23-5 Package

• Guaranteed specs at 1.8V, 2.2V, 2.7V, 3V and 5V

• Ver y Low Supply current typically 50µA @ 3V

• Rail-to-Rail Output

• Typical Total Harmonic Distortion of 0.02% at 3V

• 1.0MHz Typical Gain-Bandwidth Product

• 0.5V/µs Typical Slew Rate

Product Description

The CMV1010 is a high performance CMOS opera­tional amplifier available in a small SOT23-5 package.
Operating with very low supply current, it is ideal for
battery operated applications where power, space and
weight are critical.

With 1MHz Gain Bandwidth Product, 0.5V/µs Slew
Rate, and a typical current consumption of only 50µA,

PIN DIAGRAM

Applications

• Mobile Communications

• Cellular Phones

• Portable Equipment

• Notebooks and PDAs

the CMV1010 provides excellent power-performance
ratio for power sensitive applications.

Ideal for use in personal electronics such as cellular
handsets, pagers, cordless telephones and other
products with limited space and battery power.

5-Pin SOT23-5

NON-INV INPUT

V-

INV INPUT

1

2

3

+

-

5

V+

4

OUTPUT

NOITAMROFNIGNIREDROTRAPDRADNATS

egakcaP rebmuNtraPgniredrO

sniPelytSleeR&epaTgnikraMtraP

55-32TOSR/Y0101VMC0101

© 2000 California Micro Devices Corp. All rights reserved.

5/00

215 Topaz Street, Milpitas, California 95035 Tel: [phone] Fax: [phone] www.calmicro.com

C0920500

1

CALIFORNIA MICRO DEVICES

CMV1010

)1ETON(SGNITARMUMIXAMETULOSBA

retemaraPgnitaRtinU

)2etoN,MBH(noitcetorPDSE0002V

egatloVtupnIlaitnereffiD/+−egatloVylppuSV

niPtuptuo/tupnitaegatloVV(,3.0+)+V(−)−3.0V

egarotS:erutarepmeT

)4etoN(noitcnuJgnitarepO

)s01,gniredloS(daeL

−051ot56
521
062

C°

Vot+V(egatloVylppuS−)5.7V

niPtupnItatnerruC5Am

)3etoN(niPtuptuOtatnerruC51Am

sniPylppuSrewoPtatnerruC51Am

)esiwrehtodeificepssselnu(SNOITIDNOCGNITAREPO

retemaraPgnitaRtinU

egatloVylppuS7ot8.1V

erutarepmeTnoitcnuJ

−58ot04

ecnatsiseRlamrehT523W/C°

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating conditions indicate ratings for

Note 2: Human Body Model, 1.5KΩ in series with 100pF.
Note 3: Applies to both single-supply and split-supply operation. Continuous short ckt operation at elevated ambient temperatures can

Note 4: The maximum power dissipation is a function of T

which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the
test conditions, see the Electrical Operating Characteristics.

result in exceeding the maximum allowed junction temperature of 150°C.
temperature is P

= (T

D

J (MAX)

- TA)/ θ

. All numbers apply for packages soldered directly to a PC board.

JA

, θJA and TA. The maximum allowable power dissipation at any ambient

J (MAX)

C°

©2000 California Micro Devices Corp. All rights reserved.

2

215 Topaz Street, Milpitas, California 95035 Tel: [phone] Fax: [phone] www.calmicro.com

5/00

CALIFORNIA MICRO DEVICES

CMV1010

SCITSIRETCARAHCGNITAREPOLACIRTCELEV8.1

M1>LR,V0=-V,V8.1=+V,C°52=jTdeificepsesiwrehtosselnU( ΩΩΩΩΩ )

lobmySretemaraPsnoitidnoCpyTtimiLtinU

V

SO

I

B

I

SO

R

NI

I

S

egatloVtesffOtupnIV

tnerruCsaiBtupnI 1Ap

tnerruCtesffOtupnI 5.0Ap

ecnatsiseRtupnI 1TΩ

tnerruCylppuS 0408Aµ

WBGtcudorPhtdiwdnaBniaG 8.0zHM

A

V

RSetaRwelSA

niaGegatloVlangiSegraLV

TUO

=−K001=LR,14.01.0V/sµ

V

RRSPoitaRnoitcejeRylppuSrewoPV2.1ptV9.0=+V

V−=9.0−otV−V2.1

RRMCoitaRnoitcejeRedoMnommoCV8.0<MCV<V00604Bd

V

MC

DHTnoitrotsiDcinomraHlatoTA

I

CS

V

O

egnaRtupnIedoMnommoC 0

=−V,zHK1=f,1

V

tnerruCtiucriCtrohStuptuOkniS/ecruoS5Am

liarrehtiemorfgniwStuptuOK01=LR02051Vm

V9.0=9Vm

TUO

V6.1otV2.0=0806Bd

0705Bd

V0=MCV

1.1

TUO

K001=LR

p-pV1=

620.0%

V

2SCITSIRETCARAHCGNITAREPOLACIRTCELEV2.

M1>LR,V0=-V,V2.2=+V,C°52=jTdeificepsesiwrehtosselnU( ΩΩ

ΩΩ)

Ω

lobmySretemaraPsnoitidnoCpyTtimiLtinU

V

SO

I

B

I

SO

R

NI

I

S

WBGtcudorPhtdiwdnaBniaG 78.0zHM

A

V

RSetaRwelSA

RRSPoitaRnoitcejeRylppuSrewoPV4.1ptV1.1=+V

RRMCoitaRnoitcejeRedoMnommoCV2.1<MCV<V00604Bd

V

MC

DHTnoitrotsiDcinomraHlatoTA

I

CS

V

O

egatloVtesffOtupnIV

V1.1=9Vm

TUO

tnerruCsaiBtupnI 1Ap

tnerruCtesffOtupnI 5.0Ap

ecnatsiseRtupnI 1TΩ

tnerruCylppuS 0408Aµ

niaGegatloVlangiSegraLV

TUO

=−K001=LR,154.01.0V/sµ

V

V−=−otV1.1−V4.1

V2otV2.0=0806Bd

0705Bd

V0=MCV

egnaRtupnIedoMnommoC 0

5.1

=−V,zHK1=f,1

V

TUO

p

-pV4.1=

20.0%

V

tnerruCtiucriCtrohStuptuOkniS/ecruoS7Am

liarrehtiemorfgniwStuptuOK01=LR02051Vm

© 2000 California Micro Devices Corp. All rights reserved.

5/00

215 Topaz Street, Milpitas, California 95035 Tel: [phone] Fax: [phone] www.calmicro.com

3