2
DAC7545
SPECIFICATIONS
ELECTRICAL
V
REF
= +10V, V
OUT 1
= 0V, ACOM = DCOM, unless otherwise specified.
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN
assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject
to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not
authorize or warrant any BURR-BROWN product for use in life support devices and/or systems.
NOTES: (1) Temperature ranges—J, K, L, GL: –40°C to +85°C. (2) This includes the effect of 5ppm max, gain TC. (3) Guaranteed but not tested. (4) DB0-DB11 = 0V
to V
DD
or VDD to 0V. (5) Typical. (6) Minimum. (7) Logic inputs are MOS gates. Typical input current (+25°C) is less than 1nA. (8) Sample tested at +25°C to ensure
compliance.
DAC7545
V
DD
= +5V V
DD
= +15V
PARAMETER GRADE T
A
= +25°CT
MAX-TMIN
(1)
TA = +25°CT
MAX-TMIN
(1)
UNITS TEST CONDITIONS/COMMENTS
STATIC PERFORMANCE
Resolution All 12 12 12 12 Bits
Accuracy J ±2 ±2 ±2 ±2 LSB
K ±1 ±1 ±1 ±1 LSB
L ±1/2 ±1/2 ±1/2 ±1/2 LSB
GL ±1/2 ±1/2 ±1/2 ±1/2 LSB
Differential Nonlinearity J ±4 ±4 ±4 ±4 LSB 10-Bit Monotonic, T
MIN
to T
MAX
K ±1 ±1 ±1 ±1 LSB 10-Bit Monotonic, T
MIN
to T
MAX
L ±1 ±1 ±1 ±1 LSB 12-Bit Monotonic, T
MIN
to T
MAX
GL ±1 ±1 ±1 ±1 LSB 12-Bit Monotonic, T
MIN
to T
MAX
Gain Error (with internal RFB)
(2)
J ±20 ±20 ±25 ±25 LSB D/A register loaded with FFFH.
K ±10 ±10 ±15 ±15 LSB Gain error is adjustable using
L ±5 ±6 ±10 ±10 LSB the circuits in Figures 2 and 3.
GL ±2 ±3 ±6 ±7 LSB
Gain Temperature Coefficient
(3)
(∆Gain/∆Temperature) All ±5 ±5 ±10 ±10 ppm/°C Typical value is 2ppm/°C
for V
DD
= +5
DC Supply Rejection
(3)
(∆Gain/∆VDD) All 0.015 0.03 0.01 0.02 %/% ∆VDD ±5%
Output Leakage Current at Out 1 J, K, L, GL 10 50 10 50 nA DB
0
-DB11 = 0V; WR, CS = 0V
DYNAMIC PERFORMANCE
Current Settling Time
(3)
All2222µs To 1/2LSB. Out1 Load = 100Ω
DAC output measured from
falling edge of WR. CS = 0V
Propagation Delay
(3)
(from digital input All
change to 90% of final analog output) 300 250 ns Out
1
Load = 100Ω. C
EXT
= 13pF
(4)
Glitch Energy All 400 250 nV-s
(5)
V
REF
= ACOM
AC Feedback at I
OUT
1 All 5 5 5 5 mVp-p
(5)
V
REF
= ±10V, 10kHz Sine Wave
REFERENCE INPUT
Input Resistance (pin 19 to AGND) All 7 7 7 7 kΩ
(6)
Input resistance TC = 300ppm/°C
(5)
25 25 25 25 kΩ
AC OUTPUTS
Output Capacitance
(3)
: C
OUT 1
All 70 70 70 70 pF DB0-DB11 = 0V; WR, CS = 0V
C
OUT 2
All 200 200 200 200 pF DB0-DB11 = VDD; WR, CS = 0V
DIGITAL INPUTS
V
IH
(Input HIGH Voltage) All 2.4 2.4 13.5 13.5 V
(6)
VIL (Input LOW Voltage) All 0.8 0.8 1.5 1.5 V
I
IN
(Input Current)
(7)
All ±1 ±10 ±1 ±10 µAVIN = 0 or V
DD
Input Capacitance
(3)
: DB0-DB
11
All5555pFV
IN
= 0V
WR, CS All 20 20 20 20 pF V
IN
= 0V
SWITCHING CHARACTERISTICS
(8)
Chip Select to Write Setup Time, t
CS
All 280 380 180 200 ns
(6)
See Timing Diagram
200 270 120 150 ns
(5)
Chip Select to Write Hold Time, t
CH
All0000ns
(6)
Write Pulse Width, t
WR
All 250 400 160 240 ns
(6)
tCS ≥ tWR, tCH ≥ 0
175 280 100 170 ns
(5)
Data Setup Time, t
DS
All 140 210 90 120 ns
(6)
100 150 60 80 ns
(5)
Data Hold Time, t
DH
All 10 10 10 10 ns
(6)
POWER SUPPLY, I
DD
All 2 2 2 2 mA All Digital Inputs VIL or V
IH
All 100 500 100 500 µA All Digital Inputs 0V or V
DD
All 10 10 10 10 µA
(5)
All Digital Inputs 0V or V
DD