Burr Brown Corporation BUF634U, BUF634T, BUF634P, BUF634F-500, BUF634 Datasheet

®

BUF634

BUF634

BUF634

BUF634

250mA HIGH-SPEED BUFFER

FEATURES

● HIGH OUTPUT CURRENT: 250mA

● SLEW RATE: 2000V/

● PIN-SELECTED BANDWIDTH:

30MHz to 180MHz

● LOW QUIESCENT CURRENT:

1.5mA (30MHz BW)

● WIDE SUPPLY RANGE:

● INTERNAL CURRENT LIMIT

● THERMAL SHUTDOWN PROTECTION

● 8-PIN DIP, SO-8, 5-LEAD TO-220, 5-LEAD

DDPAK SURFACE-MOUNT

µs

±2.25 to ±18V

BUF634

APPLICATIONS

● VALVE DRIVER

● SOLENOID DRIVER

● OP AMP CURRENT BOOSTER

● LINE DRIVER

● HEADPHONE DRIVER

● VIDEO DRIVER

● MOTOR DRIVER

● TEST EQUIPMENT

● ATE PIN DRIVER

DESCRIPTION

The BUF634 is a high speed unity-gain open-loop
buffer recommended for a wide range of applications.
It can be used inside the feedback loop of op amps to
increase output current, eliminate thermal feedback
and improve capacitive load drive.

For low power applications, the BUF634 operates
on 1.5mA quiescent current with 250mA output,
2000V/µs slew rate and 30MHz bandwidth. Band­width can be adjusted from 30MHz to 180MHz by
connecting a resistor between V– and the BW Pin.

Output circuitry is fully protected by internal current
limit and thermal shut-down making it rugged and
easy to use.

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8-Pin DIP Package

SO-8 Surface-Mount Package

1

BW

2

NC

G = 1

3

V

IN

4

V–

8

NC

7

V+

6

V

O

5

NC

The BUF634 is available in a variety of packages to
suit mechanical and power dissipation requirements.
Types include 8-pin DIP, SO-8 surface-mount, 5-lead
TO-220, and a 5-lead DDPAK surface-mount plastic
power package.

5-Lead
TO-220

5-Lead DDPAK
Surface Mount

G = 1 G = 1

O

5

V+

1234

BW

NOTE: Tabs are connected
to V– supply.

5

V–

V+

V

V

IN

O

1234

BW

V–

V

IN

V

©

1993 Burr-Brown Corporation PDS-1206C Printed in U.S.A. June, 1996

SPECIFICATIONS

BW

V+

V–

V

O

V

IN

ELECTRICAL

At T

A

= +25°C

(1)

, VS = ±15V, unless otherwise noted.

BUF634P, U, T, F

LOW QUIESCENT CURRENT MODE WIDE BANDWIDTH MODE
PARAMETER CONDITION MIN TYP MAX MIN TYP MAX UNITS
INPUT

Offset Voltage ±30 ±100 ✻✻ mV

vs Temperature Specified Temperature Range ±100 ✻ µV/°C
vs Power Supply V

Input Bias Current V

S

Input Impedance R
Noise Voltage f = 10kHz 4 ✻ nV/√Hz

GAIN R

R

L

R

(2)

= ±2.25V

= 1kΩ, VO = ±10V 0.95 0.99 ✻✻ V/V

L

= 100Ω, VO = ±10V 0.85 0.93 ✻✻ V/V

= 67Ω, VO = ±10V 0.8 0.9 ✻✻ V/V

L

to ±18V 0.1 1 ✻✻mV/V

= 0V ±0.5 ±2 ±5 ±20 µA

IN

= 100Ω 80 || 8 8 || 8 MΩ || pF

L

OUTPUT

Current Output, Continuous ±250 ✻ mA
Voltage Output, Positive I

Negative I
Positive I
Negative I
Positive I
Negative I

= 10mA (V+) –2.1 (V+) –1.7 ✻✻ V

O

= –10mA (V–) +2.1 (V–) +1.8 ✻✻ V

O

= 100mA (V+) –3 (V+) –2.4 ✻✻ V

O

= –100mA (V–) +4 (V– ) +3.5 ✻✻ V

O

= 150mA (V+) –4 (V+) –2.8 ✻✻ V

O

= –150mA (V–) +5 (V–) +4 ✻✻ V

O

Short-Circuit Current ±350 ±550 ±400 ✻ mA

DYNAMIC RESPONSE

Bandwidth, –3dB R

Slew Rate 20Vp-p, R
Settling Time, 0.1% 20V Step, R

1% 20V Step, R
Differential Gain
Differential Phase

3.58MHz, VO = 0.7V, RL = 150Ω

3.58MHz, VO = 0.7V, RL = 150Ω

= 1kΩ 30 180 MHz

L

R

= 100Ω 20 160 MHz

L

= 100Ω 2000 ✻ V/µs

L

= 100Ω 200 ✻ ns

L

= 100Ω 50 ✻ ns

L

4 0.4 %

2.5 0.1 °

POWER SUPPLY

Specified Operating Voltage ±15 ✻ V
Operating Voltage Range ±2.25
Quiescent Current, I

Q

IO = 0 ±1.5 ± 2 ±15 ±20 mA

(2)

±18 ✻✻V

TEMPERATURE RANGE

Specification –40 +85 ✻✻°C
Operating –40 +125 ✻✻°C
Storage –55 +125 ✻✻°C
Thermal Shutdown

Temperature, T

Thermal Resistance,

J

θ

JA

θ

JA

θ

JA

θ

JC

θ

JA

θ

JC

“P” Package
“U” Package
“T” Package

“T” Package 6 ✻ °C/W

“F” Package

“F” Package 6 ✻ °C/W

(3)
(3)
(3)

(3)

175 ✻ °C
100 ✻ °C/W
150 ✻ °C/W

65 ✻ °C/W

65 ✻ °C/W

V+

V

IN

V

O

V–

✻ Specifications the same as Low Quiescent Mode.
NOTES: (1) Tests are performed on high speed automatic test equipment, at approximately 25°C junction temperature. The power dissipation of this product will

cause some parameters to shift when warmed up. See typical performance curves for over-temperature performance. (2) Limited output swing available at low supply
voltage. See Output voltage specifications. (3) Typical when all leads are soldered to a circuit board. See text for recommendations.

The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN
assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject
to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not
authorize or warrant any BURR-BROWN product for use in life support devices and/or systems.

®

BUF634

2

PIN CONFIGURATION

Top View 8-Pin Dip Package

1

BW

2

NC

G = 1

3

V

IN

4

V–

SO-8 Surface-Mount Package

8

NC

7

V+

6

V

O

5

NC

NC = No Connection

ABSOLUTE MAXIMUM RATINGS

Supply Voltage ..................................................................................... ±18V

Input Voltage Range ...............................................................................±V

Output Short-Circuit (to ground) .................................................Continuous

Operating Temperature .....................................................–40°C to +125°C

Storage Temperature ........................................................ –55°C to +125°C

Junction Temperature ....................................................................... +150°C

Lead Temperature (soldering,10s) .................................................... +300°C

PACKAGE/ORDERING INFORMATION

PACKAGE
DRAWING TEMPERATURE

PRODUCT PACKAGE NUMBER

BUF634P 8-Pin Plastic DIP 006 –40°C to +85°C
BUF634U SO-8 Surface-Mount 182 –40°C to +85°C
BUF634T 5-Lead TO-220 315 –40°C to +85°C
BUF634F 5-Lead DDPAK 325 –40°C to +85°C

NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.

(1)

RANGE

Top View

5-Lead
TO-220

5-Lead DDPAK
Surface Mount

G = 1 G = 1

O

5

V+

1234

BW

V–

V

IN

5

V+

V

O

NOTE: Tab electrically
connected to V–.

1234

S

BW

V–

V

V

IN

ELECTROSTATIC
DISCHARGE SENSITIVITY

Any integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.

ESD damage can range from subtle performance degrada­tion to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet
published specifications.

®

3

BUF634