The ADS802 is a low power, monolithic 12-bit, 10MHz
analog-to-digital converter utilizing a small geometry
CMOS process. This COMPLETE converter includes
a 12-bit quantizer, wideband track/hold, reference and
three-state outputs. It operates from a single +5V
power supply and can be configured to accept either
differential or single-ended input signals.
The ADS802 employs digital error correction in order
to provide excellent Nyquist differential linearity performance for demanding imaging applications. Its low
distortion, high SNR, and high oversampling capability
give it the extra margin needed for telecommunications,
test instrumentation and video applications.
This high performance A/D converter is specified for
AC and DC performance at a 10MHz sampling rate.
The ADS802 is available in 28-lead SOIC and SSOP
packages.
CLK
Timing
Circuitry
IN
IN
REFT
CM
REFB
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
Gain Tempco±85ppm/°C
Power Supply Rejection of GainDelta +V
Input Offset ErrorFull±2.1±3.0%
Power Supply Rejection of OffsetDelta +V
CONVERSION CHARACTERISTICS
Sample Rate10k10MSample/s
Data Latency6.5Convert Cycle
DYNAMIC CHARACTERISTICS
Differential Linearity Error
f = 500kHz+25°C±0.3±1.0LSB
f = 5MHz+25°C±0.4±1.0LSB
No Missing Codes0°C to +85°CGuaranteedLSB
Integral Linearity Error at f = 500kHzBest Fit0°C to +85°C±1.7±2.75LSB
Spurious-Free Dynamic Range (SFDR)
f = 500kHz (–1dBFS input)+25°C6777dBFS
f = 5MHz (–1dBFS input)+25°C6367dBFS
Two-Tone Intermodulation Distortion (IMD)
f = 4.4MHz and 4.5MHz (–7dBFS each tone)+25°C–65dBc
Signal-to-Noise Ratio (SNR)
f = 500kHz (–1dBFS input)+25°C65 67dB
f = 5MHz (–1dBFS input)+25°C64 66dB
Signal-to-(Noise + Distortion) (SINAD)
f = 500kHz (–1dBFS input)+25°C63 66dB
f = 5MHz (–1dBFS input)+25°C61 63dB
Differential Gain ErrorNTSC or PAL+25°C0.5%
Differential Phase ErrorNTSC or PAL+25°C0.1degrees
Aperture Delay Time+25°C2 ns
Aperture Jitter+25°C7ps rms
Overvoltage Recovery Time
NOTE: (1) dBFS refers to dB below Full Scale. (2). Percentage accuracies are referred to the internal A/D Full Scale Range of 4Vp-p. (3) IMD is referred to the
larger of the two input signals. If referred to the peak envelope signal (≈0dB), the intermodulation products will be 7dB lower. (4) No "rollover" of bits.
(2)
(3)
(4)
AMBIENT
(1)
Input+25°C400MHz
Full±1.0±2.5%
= ±5%+25°C0.030.1%FSR/%
S
= ±5%+25°C0.050.1%FSR/%
S
0°C to +85°C±0.4±1.0LSB
0°C to +85°C±0.4±1.0LSB
Full6675dBFS
Full6266dBFS
Full–64dBc
Full6467dB
Full6266dB
Full6165dB
Full6062dB
1.5x Full Scale Input+25°C2 ns
–40+85°C
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
®
ADS802
2
SPECIFICATIONS (CONT)
At TA = +25°C, VS = +5V, and Sampling Rate = 10MHz, with a 50% duty cycle clock having a 2ns rise/fall time, unless otherwise noted.
External Top Reference Voltage (REFT) .................................. +3.4V Max
External Bottom Reference Voltage (REFB).............................. +1.1V Min
NOTE: Stresses above these ratings may permanently damage the device.
+ 300mV)
S
+ 300mV)
S
PACKAGE/ORDERING INFORMATION
PACKAGE
DRAWING TEMPERATURE
PRODUCTPACKAGENUMBER
ADS802U28-Lead SOIC217–40°C to +85°C
ADS802E28-Lead SSOP324–40°C to +85°C
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
(1)
RANGE
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and
installation procedures can cause damage.
Electrostatic discharge can cause damage ranging from
performance degradation to complete device failure. BurrBrown Corporation recommends that all integrated circuits be
handled and stored using appropriate ESD protection
methods.
®
3
ADS802
TOP VIEWSOIC/SSOP
GND
B10
B11
B12
GND
B1
B2
B3
B4
B5
B6
B7
B8
B9
1
2
3
4
5
6
7
ADS802
8
9
10
11
12
13
14
28
GND
27
IN
26
IN
25
GND
24
+V
S
23
REFT
22
CM
21
REFB
20
+V
S
19
MSBI
18
OE
17
+V
S
16
CLK
15
+V
S
PIN DESCRIPTIONSPIN CONFIGURATION
PINDESIGNATOR DESCRIPTION
1GNDGround
2B1Bit 1, Most Significant Bit
3B2Bit 2
4B3Bit 3
5B4Bit 4
6B5Bit 5
7B6Bit 6
8B7Bit 7
9B8Bit 8
10B9Bit 9
11B10Bit 10
12B11Bit 11
13B12Bit 12, Least Significant Bit
14GNDGround
15+V
16CLKConvert Clock Input, 50% Duty Cycle
17+V
18OEHI: High Impedance State. LO or Floating: Nor-
19MSBIMost Significant Bit Inversion, HI: MSB inverted
20+V
21REFBBottom Reference Bypass. For external bypass-
22CMCommon-Mode Voltage. It is derived by
23REFTTop Reference Bypass. For external bypassing