Burr Brown Corporation ADS801U, ADS801E-1K, ADS801 Datasheet

©
1995 Burr-Brown Corporation PDS-1287E Printed in U.S.A. September, 1996
TM
ADS801
12-Bit, 25MHz Sampling
ANALOG-TO-DIGITAL CONVERTER
®
FEATURES
LOW POWER: 270mW
INTERNAL REFERENCE
WIDEBAND TRACK/HOLD: 65MHz
SINGLE +5V SUPPLY
PACKAGE: 28-Lead SOIC and
28-Lead SSOP
DESCRIPTION
The ADS801 is a low power, monolithic 12-bit, 25MHz analog-to-digital converter utilizing a small geometry CMOS process. This COMPLETE converter includes a 12-bit quantizer, wideband track/hold, reference, and three-state outputs. It operates from a single +5V power supply and can be configured to accept either single-ended or differential input signals.
The ADS801 employs digital error correction to provide excellent Nyquist differential linearity performance for demanding imaging applications. Its low distortion, high SNR and high oversampling capability give it the extra margin needed for telecommunications, instru­mentation and video applications.
This high performance A/D converter is specified over temperature for AC and DC performance at a 25MHz sampling rate. The ADS820 is available in 28-lead SOIC and 28-lead SSOP packages.
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ADS801U
ADS801E
APPLICATIONS
IF AND BASEBAND DIGITIZATION
DIGITAL COMMUNICATIONS
TEST INSTRUMENTATION
CCD IMAGING
Copiers Scanners Cameras
VIDEO DIGITIZING
GAMMA CAMERAS
Pipeline
A/D
Timing
Circuitry
Error
Correction
Logic
3-State
Outputs
T/H
12-Bit Digital
Data
CLK
+1.25V
+3.25V
MSBI OE
IN
IN
REFT
CM
REFB
2
ADS801
®
ADS801U ADS801E
PARAMETER CONDITIONS TEMP MIN TYP MAX MIN TYP MAX UNITS
SPECIFICATIONS
At TA = +25°C, VS = +5V, Sampling Rate = 25MHz, with a 50% duty cycle clock having a 2ns rise/fall time, unless otherwise noted.
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems.
TTL/HCT Compatible CMOS
Falling Edge
TTL/HCT Compatible CMOS
Falling Edge
Resolution 12 12 Bits Specified Temperature Range T
AMBIENT
–40 +85
(1)
°C
ANALOG INPUT
Differential Full Scale Input Range Both Inputs, +1.25 +3.25 ✻✻V
180° Out of Phase Common-Mode Voltage +2.25 V Analog Input Bandwidth (–3dB)
Small Signal –20dBFS
(2)
Input +25°C 400 MHz
Full Power 0dBFS Input +25°C65 MHz
Input Impedance 1.25 || 4 M || pF
DIGITAL INPUT
Logic Family Convert Command Start Conversion
ACCURACY
(3)
Gain Error +25°C ±0.6 ±1.5 ✻✻ %
Full ±1.0 ±2.5 ✻✻ % Gain Tempco ±85 ppm/°C Power Supply Rejection of Gain Delta +V
S
= ±5% +25°C 0.03 0.15 ✻✻%FSR/% Input Offset Error Full ±2.1 ±3.0 ✻✻ % Power Supply Rejection of Offset Delta +V
S
= ±5% +25°C 0.05 0.15 ✻✻%FSR/%
CONVERSION CHARACTERISTICS
Sample Rate 10k 25M ✻✻Sample/s Data Latency 6.5 Convert Cycle
DYNAMIC CHARACTERISTICS
Differential Linearity Error
f = 500kHz +25°C ±0.3 ±1.0 ±0.4 LSB
0°C to +85°C ±0.4 ±1.0 ±0.5 LSB
f = 10MHz +25°C ±0.3 ±1.0 ±0.4 LSB
0°C to +85°C ±0.4 ±1.0 ±0.5 LSB No Missing Codes 0°C to +85°C Guaranteed Guaranteed LSB Integral Linearity Error at f = 500kHz Full ±1.7 LSB Spurious-Free Dynamic Range (SFDR)
f = 500kHz (–1dBFS input) +25°C6377 ✻✻dBFS
Full 62 73 ✻✻dBFS
f = 10MHz (–1dBFS input) +25°C5761 ✻✻dBFS
Full 55 61 ✻✻dBFS
Two-Tone Intermodulation Distortion (IMD)
(4)
f = 4.4MHz and 4.5MHz (–7dBFS each tone) +25°C –64 dBc
Full –63 dBc
Signal-to-Noise Ratio (SNR)
f = 500kHz (–1dBFS input) +25°C6466 6264 dB
Full 61 64 59 dB
f = 10MHz (–1dBFS input) +25°C6265 ✻✻ dB
Full 58 64 ✻✻ dB
Signal-to-(Noise + Distortion) (SINAD)
f = 500kHz (–1dBFS input) +25°C6366 6164 dB
Full 60 63 58 dB
f = 10MHz (–1dBFS input) +25°C5659 ✻✻ dB
Full 54 58 ✻✻ dB Differential Gain Error NTSC or PAL +25°C 0.5 % Differential Phase Error NTSC or PAL +25°C 0.1 degrees Aperture Delay Time +25°C2 ns Aperture Jitter +25°C7 ps rms Overvoltage Recovery Time
(5)
1.5x Full Scale Input +25°C2 ns
NOTE: (1) An asterisk (✻) indicates same specifications as the ADS801U. (2) dBFS refers to dB below Full Scale. (3) Percentage accuracies are referred to the internal A/D Full Scale Range of 4Vp-p. (4) IMD is referred to the larger of the two input signals. If referred to the peak envelope signal (0dB), the intermodulation products will be 7dB lower. (5) No “rollover” of bits.
3
®
ADS801
OUTPUTS
Logic Family Logic Coding Logic Selectable Logic Levels Logic “LO”, Full 0 0.4 ✻✻V
C
L
= 15pF max Logic “HI”, Full +2.5 +V
S
✻✻V
C
L
= 15pF max 3-State Enable Time 20 40 ✻✻ ns 3-State Disable Time Full 2 10 ✻✻ ns
POWER SUPPLY REQUIREMENTS
Supply Voltage: +V
S
Operating Full +4.75 +5.0 +5.25 ✻✻✻ V
Supply Current: +I
S
Operating +25°C5465 ✻✻ mA Operating Full 54 68 ✻✻ mA
Power Consumption Operating +25°C 270 325 ✻✻ mW
Operating Full 270 340 ✻✻ mW
Thermal Resistance,
θ
JA
28-Lead SOIC 75 °C/W 28-Lead SSOP 50 °C/W
Specifications same as ADS801U.
ADS801U ADS801E
PARAMETER CONDITIONS TEMP MIN TYP MAX MIN TYP MAX UNITS
TTL/HCT Compatible CMOS
Falling Edge
TTL/HCT Compatible CMOS
Falling Edge
SPECIFICATIONS (CONT)
At TA = +25°C, VS = +5V, Sampling Rate = 25MHz, with a 50% duty cycle clock having a 2ns rise/fall time, unless otherwise noted.
ELECTROSTATIC DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
Electrostatic discharge can cause damage ranging from per­formance degradation to complete device failure. Burr­Brown Corporation recommends that all integrated circuits be handled and stored using appropriate ESD protection methods.
ABSOLUTE MAXIMUM RATINGS
+VS.......................................................................................................+6V
Analog Input............................................................. 0V to (+V
S
+ 300mV)
Logic Input ................................................................ 0V to (+V
S
+ 300mV)
Case Temperature ......................................................................... +100°C
Junction Temperature .................................................................... +150°C
Storage Temperature..................................................................... +125°C
External Top Reference Voltage (REFT) .................................. +3.4V Max
External Bottom Reference Voltage (REFB)..............................+1.1V Min
NOTE: Stresses above these ratings may permanently damage the device.
PACKAGE DRAWING TEMPERATURE
PRODUCT PACKAGE NUMBER
(1)
RANGE
ADS801U 28-Lead SOIC 217 –40°C to +85°C ADS801E 28-Lead SSOP 324 –40°C to +85°C
NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book.
PACKAGE/ORDERING INFORMATION
4
ADS801
®
GND
B1 B2 B3 B4 B5 B6 B7 B8
B9 B10 B11 B12
GND
GND IN IN GND +V
S
REFT CM REFB +V
S
MSBI OE +V
S
CLK +V
S
1 2 3 4 5 6 7 8
9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
ADS801
PIN CONFIGURATION
TOP VIEW SOIC/SSOP
TIMING DIAGRAM
SYMBOL DESCRIPTION MIN TYP MAX UNITS
t
CONV
Convert Clock Period 40 100µsns
t
L
Clock Pulse Low 19 20 ns
t
H
Clock Pulse High 19 20 ns
t
D
Aperture Delay 2 ns
t
1
Data Hold Time, CL = 0pF 3.9 ns
t
2
New Data Delay Time, CL = 15pF max 12.5 ns
PIN DESIGNATOR DESCRIPTION
1 GND Ground 2 B1 Bit 1, Most Significant Bit 3 B2 Bit 2 4 B3 Bit 3 5 B4 Bit 4 6 B5 Bit 5 7 B6 Bit 6 8 B7 Bit 7 9 B8 Bit 8 10 B9 Bit 9 11 B10 Bit 10 12 B11 Bit 11 13 B12 Bit 12, Least Significant Bit 14 GND Ground 15 +V
S
+5V Power Supply 16 CLK Convert Clock Input, 50% Duty Cycle 17 +V
S
+5V Power Supply 18 OE HI: High Impedance State. LO or Floating: Nor-
mal Operation. Internal pull-down resistors. 19 MSBI Most Significant Bit Inversion, HI: MSB inverted
for complementary output. LO or Floating: Straight
output. Internal pull-down resistors. 20 +V
S
+5V Power Supply 21 REFB Bottom Reference Bypass. For external bypass-
ing of internal +1.25V reference. 22 CM Common-Mode Voltage. It is derived by (REFT +
REFB)/2. 23 REFT Top Reference Bypass. For external bypassing
of internal +3.25V reference. 24 +V
S
+5V Power Supply 25 GND Ground 26 IN Input 27 IN Complementary Input 28 GND Ground
PIN DESCRIPTIONS
NOTE: (1) “ ” indicates the portion of the waveform that will stretch out at slower sample rates.
Track
Hold
"N"
Hold
"N + 1"
Hold
"N + 2"
Hold
"N + 3"
Hold
"N + 4"
Hold
"N + 5
"
Hold
"N + 6"
Track
Data Valid
N-7
Data Valid
N-6
INTERNAL
TRACK/HOLD
CONVERT
CLOCK
OUTPUT
DATA
t
D
t
2
t
1
DATA LATENCY
(6.5 Clock Cycles)
t
CONV
tLt
H
Track Track Track Track
N-3N-5 N-4 N-2 N-1
N
Track Track
Data Valid
N-8
(1)
Data Invalid
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