The ADS800 is a low power, monolithic 12-bit, 40MHz
analog-to-digital converter utilizing a small geometry
CMOS process. This COMPLETE converter includes
a 12-bit quantizer, wideband track/hold, reference and
three-state outputs. It operates from a single +5V
power supply and can be configured to accept either
differential or single-ended input signals.
The ADS800 employs digital error correction to provide excellent Nyquist differential linearity performance for demanding imaging applications. Its low
distortion, high SNR and high oversampling capability
give it the extra margin needed for telecommunications,
test instrumentation and video applications.
This high performance A/D converter is specified over
temperature for AC and DC performance at a 40MHz
sampling rate. The ADS800 is available in 28-lead
SOIC and SSOP packages.
CLK
Timing
Circuitry
MSBIOE
IN
IN
REFT
CM
REFB
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
1995 Burr-Brown CorporationPDS-1286EPrinted in U.S.A. November, 1996
T/H
+3.25V
+1.25V
Pipeline
A/D
Error
Correction
Logic
3-State
Outputs
12-Bit
Digital
Data
SPECIFICATIONS
At TA = +25°C, VS = +5V, Sampling Rate = 40MHz, with a 50% duty cycle clock having a 2ns rise/fall time, unless otherwise noted.
ADS800U (SOIC)ADS800E (SSOP)
PARAMETERCONDITIONSTEMPMINTYPMAXMINTYPMAXUNITS
Resolution12✻Bits
Specified Temperature RangeT
Operating Temperature RangeT
AMBIENT
AMBIENT
0+70✻
–40+85✻✻°C
ANALOG INPUT
Differential Full Scale Input RangeBoth Inputs,+1.25+3.25✻✻V
180° Out of Phase
Common-Mode Voltage+2.25✻V
Analog Input Bandwidth (–3dB)
Small Signal–20dBFS
(2)
Input+25°C400✻MHz
Full Power0dBFS Input+25°C65✻ MHz
Input Impedance1.25 || 4✻MΩ || pF
DIGITAL INPUT
Logic Family
Convert CommandStart Conversion
ACCURACY
(3)
TTL/HCT Compatible CMOS
Falling Edge
Gain Error+25°C±0.4±1.5✻✻ %
Full±0.6±2.5✻✻ %
Gain Drift±95✻ppm/°C
Power Supply Rejection of GainDelta +V
Input Offset ErrorFull±2.6±3.5✻✻ %
Power Supply Rejection of OffsetDelta +V
= ±5%+25°C0.010.15✻✻%FSR/%
S
= ±5%+25°C0.020.15✻✻%FSR/%
S
CONVERSION CHARACTERISTICS
Sample Rate10k40M✻✻Sample/s
Data Latency6.5✻Convert Cycle
DYNAMIC CHARACTERISTICS
Differential Linearity Error
f = 500kHzt
= 13ns
H
(4)
+25°C±0.6±1.0✻LSB
Full±0.8✻LSB
f = 12MHz+25°C±0.4±1.0±0.7LSB
No Missing Codest
Integral Linearity Error at f = 500kHzFull±1.9✻LSB
= 13ns
H
(4)
Full±0.5±0.8LSB
+25°CGuaranteedGuaranteedLSB
Spurious-Free Dynamic Range (SFDR)
f = 500kHz (–1dBFS input)+25°C6572✻✻dBFS
Full6066✻✻dBFS
f = 12MHz (–1dBFS input)+25°C5861✻✻dBFS
Two-Tone Intermodulation Distortion (IMD)
(5)
Full5561✻✻dBFS
f = 4.4MHz and 4.5MHz (–7dBFS each tone)+25°C–63✻dBc
Full5157✻✻dB
Differential Gain ErrorNTSC or PAL+25°C0.5✻%
Differential Phase ErrorNTSC or PAL+25°C0.1✻degrees
Aperture Delay Time+25°C2✻ ns
Aperture Jitter+25°C7✻ps rms
Overvoltage Recovery Time
(6)
1.5x Full Scale Input+25°C2✻ ns
NOTE: (1) An asterisk (✻) indicates same specifications as the ADS800U. (2) dBFS refers to dB below Full Scale. (3) Percentage accuracies are referred to the
internal A/D Full Scale Range of 4Vp-p. (4) Refer to Timing Diagram footnotes for the guaranteed differential linearity performance and no missing codes condition
for the SOIC and SSOP packages. (5) IMD is referred to the larger of the two input signals. If referred to the peak envelope signal (≈0dB), the intermodulation
products will be 7dB lower. (6) No “rollover” of bits.
(1)
✻°C
TTL/HCT Compatible CMOS
Falling Edge
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
®
ADS800
2
SPECIFICATIONS (CONT)
At TA = +25°C, VS = +5V, Sampling Rate = 40MHz, with a 50% duty cycle clock having a 2ns rise/fall time, unless otherwise noted.
External Top Reference Voltage (REFT) .................................. +3.4V Max
External Bottom Reference Voltage (REFB)..............................+1.1V Min
NOTE: (1) Stresses above these ratings may permanently damage the device.
+ 300mV)
S
+ 300mV)
S
PACKAGE/ORDERING INFORMATION
PACKAGE
DRAWING TEMPERATURE
PRODUCTPACKAGENUMBER
ADS800U28-Lead SOIC217–40°C to +85°C
ADS800E28-Lead SSOP324–40°C to +85°C
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
(1)
RANGE
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and
installation procedures can cause damage.
Electrostatic discharge can cause damage ranging from
performance degradation to complete device failure. BurrBrown Corporation recommends that all integrated circuits be
handled and stored using appropriate ESD protection
methods.
®
3
ADS800
PIN CONFIGURATION
TOP VIEWSOIC/SSOP
GND
B1
B2
B3
B4
B5
B6
B7
B8
B9
B10
B11
B12
GND
1
2
3
4
5
6
7
ADS800
8
9
10
11
12
13
14
28
GND
27
IN
26
IN
25
GND
24
+V
S
23
REFT
22
CM
21
REFB
20
+V
S
19
MSBI
18
OE
17
+V
S
16
CLK
15
+V
S
PIN DESCRIPTIONS
PINDESIGNATOR DESCRIPTION
1GNDGround
2B1Bit 1, Most Significant Bit
3B2Bit 2
4B3Bit 3
5B4Bit 4
6B5Bit 5
7B6Bit 6
8B7Bit 7
9B8Bit 8
10B9Bit 9
11B10Bit 10
12B11Bit 11
13B12Bit 12, Least Significant Bit
14GNDGround
15+V
16CLKConvert Clock Input, 50% Duty Cycle
17+V
18OEHI: High Impedance State. LO or Floating: Nor-
19MSBIMost Significant Bit Inversion, HI: MSB inverted
20+V
21REFBBottom Reference Bypass. For external bypass-
22CMCommon-Mode Voltage. It is derived by (REFT +
23REFTTop Reference Bypass. For external bypassing