3
®
ADS7852
Top View TQFP
PIN NAME DESCRIPTION
1 AIN0 Analog Input Channel 0
2 AIN1 Analog Input Channel 1
3 AIN2 Analog Input Channel 2
4 AIN3 Analog Input Channel 3
5 AIN4 Analog Input Channel 4
6 AIN5 Analog Input Channel 5
7 AIN6 Analog Input Channel 6
8 AIN7 Analog Input Channel 7
9 AGND Analog Ground, GND = 0V
10 V
REF
Voltage Reference Input and Output. See
Specification Table for ranges. Decouple to
ground with a 0.1µF ceramic capacitor and
a 2.2µF tantalum capacitor.
11 DGND Digital Ground, GND = 0V
12 A2 Channel Address. See Channel Selection
Table for details.
13 A1 Channel Address. See Channel Selection
Table for details.
14 A0 Channel Address. See Channel Selection
Table for details.
15 DB11 Data Bit 11 (MSB)
16 DB10 Data Bit 10
17 DB9 Data Bit 9
18 DB8 Data Bit 8
19 DB7 Data Bit 7
20 DB6 Data Bit 6
21 DB5 Data Bit 5
22 DB4 Data Bit 4
23 DB3 Data Bit 3
24 DB2 Data Bit 2
25 DB1 Data Bit 1
26 DB0 Data Bit 0 (LSB)
27 WR Write Input. Active LOW. Use to start a
new conversion and to select an analog
channel via address inputs A0, A1 and A2
in combination with CS.
28 BUSY BUSY output goes LOW and stays LOW
during a conversion. BUSY rises when a
conversion is complete.
29 CLK
External Clock Input. The clock speed
determines the conversion rate by the
equation: f
CLK
= 16 • f
SAMPLE
.
30 RD Read Input. Active LOW. Use to read the
data outputs in combination with CS. Also
use (in conjunction with A0 or A1) to place
device in power-down mode.
31 CS Chip Select Input. Active LOW. The
combination of CS taken LOW and WR
taken LOW initiates a new conversion and
places the outputs in tri-state mode.
32 V
SS
Voltage Supply Input. Nominally +5V.
Decouple to ground with a 0.1µF ceramic
capacitor and a 10µF tantalum capacitor.
PIN ASSIGNMENTS
PIN CONFIGURATION
ELECTROSTATIC
DISCHARGE SENSITIVITY
Electrostatic discharge can cause damage ranging from performance degradation to complete device failure. BurrBrown Corporation recommends that all integrated circuits
be handled and stored using appropriate ESD protection
methods.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet
published specifications.
Analog Inputs to AGND, Any Channel Input ..............–0.3V to (VD + 0.3V)
REF
IN
.........................................................................–0.3V to (VD + 0.3V)
Digital Inputs to DGND ..............................................–0.3V to (V
D
+ 0.3V)
Ground Voltage Differences: AGND, DGND..................................... ±0.3V
+V
SS
to AGND..........................................................................–0.3V to 6V
Power Dissipation .......................................................................... 325mW
Maximum Junction Temperature ................................................... +150°C
Operating Temperature Range ......................................... –40°C to +85°C
Storage Temperature Range .......................................... –65°C to +150°C
Lead Temperature (soldering, 10s) ............................................... +300°C
NOTE: (1) Stresses above those listed under “Absolute Maximum Ratings” may
cause permanent damage to the device. Exposure to absolute maximum conditions for extended periods may affect device reliability.
ABSOLUTE MAXIMUM RATINGS
(1)
AIN0
AIN1
AIN2
AIN3
AIN4
AIN5
AIN6
AIN7
1
2
3
4
5
6
7
8
24
23
22
21
20
19
18
17
DB2
DB3
DB4
DB5
DB6
DB7
DB8
DB9
ADS7852Y
32
31
30
29
28
27
26
25
V
SS
CS
RD
CLK
BUSYWRDB0 (LSB)
DB1
9
10
11
12
13
14
15
16
AGND
V
REF
DGND
A2
A1
A0
DB11 (MSB)
DB10