3
®
ADS7821
POWER SUPPLIES
Specified Performance
V
DIG
Must be ≤ V
ANA
+4.75 +5 +5.25 ✱✱✱ V
V
ANA
+4.75 +5 +5.25 ✱✱✱ V
I
DIG
0.3 ✱ mA
I
ANA
16 ✱ mA
Power Dissipation f
S
= 100kHz 100 ✱ mW
TEMPERATURE RANGE
Specified Performance –25 +85 ✱✱ °C
Derated Performance –55 +125 ✱✱ °C
Storage –65 +150 ✱✱°C
Thermal Resistance (
θ
JA
)
Plastic DIP 75 ✱ °C/W
SOIC 75 ✱ °C/W
NOTES: (1) LSB means Least Significant Bit. For the 16-bit, 0 to +5V input ADS721, one LSB is 76µV. (2) Typical rms noise at worst case transitions and
temperatures. (3) Adjustable to zero with external potentiometer as shown in Figure 6a. (4) Full scale error is the worst case of Full Scale untrimmed deviation from
ideal last code transition divided by the transition voltage and includes the effect of offset error. (5) All specifications in dB are referred to a full-scale input. (6) FullPower Bandwidth defined as Full-Scale input frequency at which Signal-to-(Noise + Distortion) degrades to 60dB, or 10 bits of accuracy. (7) Recovers to specified
performance after 2 x FS input overvoltage.
SPECIFICATIONS (CONT)
ELECTRICAL
TA = –25°C to +85°C, fS = 100kHz, V
DIG
= V
ANA
= VD = +5V, using external reference, unless otherwise specified.
ADS7821P, U ADS7821PB, UB
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
ABSOLUTE MAXIMUM RATINGS
Analog Inputs: VIN......................................................–0.7V to V
ANA
+0.3V
REF ................................... AGND2 –0.3V to +V
ANA
+0.3V
CAP .......................................... Indefinite Short to AGND2,
Momentary Short to V
ANA
Ground Voltage Differences: DGND, AGND1, AGND2 ................... ±0.3V
V
ANA
.......................................................................................................7V
V
DIG
to V
ANA
.....................................................................................+0.3V
V
DIG
.......................................................................................................7V
Digital Inputs ............................................................ –0.3V to +V
DIG
+0.3V
Maximum Junction Temperature ................................................... +165°C
Internal Power Dissipation ............................................................. 825mW
Lead Temperature (soldering, 10s)................................................ +300°C
PACKAGE INFORMATION
PACKAGE DRAWING
PRODUCT PACKAGE NUMBER
(1)
ADS7821P Plastic DIP 246
ADS7821PB Plastic DIP 246
ADS7821U SOIC 217
ADS7821UB SOIC 217
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
MINIMUM
SIGNAL-TO-
MAXIMUM (NOISE + SPECIFICATION
LINEARITY DISTORTION) TEMPERATURE
PRODUCT ERROR (LSB) RATIO (dB) RANGE PACKAGE
ADS7821P ±4 83 –25°C to +85°C Plastic DIP
ADS7821PB ±3 86 –25°C to +85°C Plastic DIP
ADS7821U ±4 83 –25° C to +85°C SOIC
ADS7821UB ±3 86 –25°C to +85°C SOIC
ORDERING INFORMATION
ELECTROSTATIC
DISCHARGE SENSITIVITY
Electrostatic discharge can cause damage ranging from performance degradation to complete device failure. BurrBrown Corporation recommends that all integrated circuits
be handled and stored using appropriate ESD protection
methods.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet
published specifications.