BURR-BROWN UAF42 User Manual
UNIVERSAL ACTIVE FIL TER
UAF42
UAF42
UAF42
FEATURES
● VERSATILE—
LOW-PASS, HIGH-PASS
BAND-PASS, BAND-REJECT
● SIMPLE DESIGN PROCEDURE
● ACCURATE FREQUENCY AND Q —
INCLUDES ON CHIP 1000pF
±0.5%
CAPACITORS
DESCRIPTION
The UAF42 is a universal active filter which can be
configured for a wide range of low-pass, high-pass,
and band-pass filters. It uses a classical state-variable
analog architecture with an inverting amplifier and
two integrators. The integrators include on-chip 1000pF
capacitors trimmed to 0.5%. This solves one of the
most difficult problems of active filter design—
obtaining tight tolerance, low-loss capacitors.
A DOS-compatible filter design program allows easy
implementation of many filter types such as
Butterworth, Bessel, and Chebyshev. A fourth, uncommitted FET-input op amp (identical to the other
APPLICATIONS
● TEST EQUIPMENT
● COMMUNICATIONS EQUIPMENT
● MEDICAL INSTRUMENTATION
● DATA ACQUISITION SYSTEMS
● MONOLITHIC REPLACEMENT FOR UAF41
three) can be used to form additional stages, or for
special filters such as band-reject and Inverse
Chebyshev.
The classical topology of the UAF42 forms a timecontinuous filter, free from the anomalies and switching noise associated with switched-capacitor filter
types.
The UAF42 is available in 14-pin plastic DIP and
SOL-16 surface-mount packages, specified for the –
25°C to +85°C temperature range.
SBFS002
High-Pass
Out
R
R
In
1
In
2
R
In
3
R = 50kΩ ±0.5%
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Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
©
1990 Burr-Brown Corporation PDS-1070H Printed in U.S.A. January, 1998
Band-Pass
1000pF
R
NOTE: (1) ±0.5%
Out
(1)
GND
Low-Pass
1000pF
Out
(1)
V+
V–
SPECIFICATIONS
ELECTRICAL
At TA = +25°C, VS = ±15V, unless otherwise noted.
UAF42AP, AU
PARAMETER CONDITIONS MIN TYP MAX UNITS
FILTER PERFORMANCE
Frequency Range, fn 0 to 100 kHz
Frequency Accuracy f = 1kHz 1 %
vs Temperature 0.01 %/°C
Maximum Q 400 —
Maximun (Q • Frequency) Product 500 kHz
Q vs Temperature (f
Q Repeatability (f
Offset Voltage, Low-Pass Output ±5mV
O
(f
O
O
Resistor Accuracy 0.5 1% %
OFFSET VOLTAGE
(1)
Input Offset Voltage ±0.5 ±5mV
vs Temperature ±3 µV/°C
vs Power Supply V
INPUT BIAS CURRENT
(1)
= ±6 to ±18V 80 96 dB
S
Input Bias Current VCM = 0V 10 50 pA
Input Offset Current V
NOISE
Input Voltage Noise
Noise Density: f = 10Hz 25 nV/√Hz
f = 10kHz 10 nV/√Hz
Voltage Noise: BW = 0.1 to 10Hz 2 µVp-p
Input Bias Current Noise
Noise Density: f = 10kHz 2 fA/√Hz
INPUT VOLTAGE RANGE
(1)
Common-Mode Input Range ±11.5 V
Common-Mode Rejection V
INPUT IMPEDANCE
(1)
Differential 1013 || 2 Ω || pF
Common-Mode 10
OPEN-LOOP GAIN
(1)
Open-Loop Voltage Gain VO = ±10V, RL = 2kΩ 90 126 dB
FREQUENCY RESPONSE
(1)
Slew Rate 10 V/µs
Gain-Bandwidth Product G = +1 4 MHz
Total Harmonic Distortion G = +1, f = 1kHz 0.0004 %
(1)
OUTPUT
Voltage Output RL = 2kΩ±11 ±11.5 V
Short Circuit Current ±25 mA
POWER SUPPLY
Specified Operating Voltage ±15 V
Operating Voltage Range ±6 ±18 V
Current ±6 ±7mA
TEMPERATURE RANGE
Specification –25 +85 °C
Operating –25 +85 °C
Storage –40 +125 °C
Thermal Resistance,
θ
JA
✻ Same as specification for UAF42AP.
NOTES: (1) Specifications apply to uncommitted op amp, A
. The three op amps forming the filter are identical to A4 but are tested as a complete filter.
4
4
• Q) < 10
5
• Q) < 10
5
• Q) < 10
= 0V 5 pA
CM
= ±10V 80 96 dB
CM
0.01 %/°C
0.025 %/°C
2%
13
|| 6 Ω || pF
100 °C/W
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
UAF42
2
PIN CONFIGURATION
Top View
Low-Pass V
V
V
Auxiliary Op Amp, +In
Auxiliary Op Amp, –In
Auxiliary Op Amp, V
Bandpass V
O
IN3
IN2
O
O
Plastic DIP, P
1
2
3
4
5
6
7
14
Frequency Adj
13
High-Pass V
12
V
IN1
11
Ground
10
V+
9
V–
8
Frequency Adj
2
O
1
ABSOLUTE MAXIMUM RATINGS
Power Supply Voltage ....................................................................... ±18V
Input Voltage............................................................................. ±V
Output Short Circuit .................................................................Continuous
Operating Temperature:
Plastic DIP, P; SOIC, U ................................................. –40°C to +85°C
Storage Temperature:
Plastic DIP, P; SOIC, U ............................................... –40°C to +125°C
Junction Temperature:
Plastic DIP, P; SOIC, U .............................................................. +125°C
Lead Temperature (soldering, 10s)................................................ +300°C
S
±0.7V
U Package
SOL-16, 16-Pin SOIC
Low-Pass V
NC
V
V
Auxiliary Op Amp, +In
Auxiliary Op Amp, –In
Auxiliary Op Amp, V
Bandpass V
NOTE: NC: No Connection. For best
performance connect all “NC” pins to
ground to minimize inter-lead capacitance.
1
O
2
3
IN3
4
IN2
5
6
7
O
8
O
16
Frequency Adj
15
NC
14
High-Pass V
13
V
IN1
12
Ground
11
V+
10
V–
9
Frequency Adj
2
O
1
PACKAGE/ORDERING INFORMATION
PACKAGE
DRAWING TEMPERATURE
PRODUCT PACKAGE NUMBER
UAF42AP Plastic 14-pin DIP 010 –25°C to +85°C
UAF42AU SOL-16 211 –25°C to +85°C
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
(1)
RANGE
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
3
UAF42
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