Burr Brown OPA660AP, OPA660AU-2K5, OPA660AU Datasheet

© 1990 Burr-Brown Corporation PDS-1072F Printed in U.S.A. April, 1995

Wide Bandwidth

OPERATIONAL TRANSCONDUCTANCE

AMPLIFIER AND BUFFER

APPLICA TIONS

● BASE LINE RESTORE CIRCUITS

● VIDEO/BROADCAST EQUIPMENT

● COMMUNICATIONS EQUIPMENT

● HIGH-SPEED DATA ACQUISITION

● WIDEBAND LED DRIVER

● AGC-MULTIPLIER

● NS-PULSE INTEGRATOR

● CONTROL LOOP AMPLIFIER

● 400MHz DIFFERENTIAL INPUT

AMPLIFIER

FEATURES

● WIDE BANDWIDTH: 850MHz

● HIGH SLEW RATE: 3000V/

µs

● LOW DIFFERENTIAL GAIN/PHASE

ERROR: 0.06%/0.02

°

● VERSATILE CIRCUIT FUNCTION

● EXTERNAL I

Q

-CONTROL

DESCRIPTION

The OPA660 is a versatile monolithic component
designed for wide-bandwidth systems including high
performance video, RF and IF circuitry. It includes a
wideband, bipolar integrated voltage-controlled cur­rent source and voltage buffer amplifier.

The voltage-controlled current source or Operational
Transconductance Amplifier (OTA) can be viewed as
an “ideal transistor.” Like a transistor, it has three
terminals—a high-impedance input (base), a low­impedance input/output (emitter), and the current
output (collector). The OTA, however, is self-biased
and bipolar. The output current is zero-for-zero dif­ferential input voltage. AC inputs centered about zero
produce an output current which is bipolar and cen­tered about zero. The transconductance of the OTA
can be adjusted with an external resistor, allowing
bandwidth, quiescent current and gain trade-offs to
be optimized.

The open-loop buffer amplifier provides 850MHz
bandwidth and 3000V/µs slew rate. Used as a basic
building block, the OPA660 simplifies the design of
AGC amplifiers, LED driver circuits for Fiber Optic
Transmission, integrators for fast pulses, fast control
loop amplifiers, and control amplifiers for capacitive
sensors and active filters.

The OPA660 is packaged in SO-8 surface-mount,
and 8-pin plastic DIP, specified from –40°C to +85°C.

OTA

B

E

C

3

8

2

56

+1

100Ω

V

I

200Ω

R

P

82Ω

V

O

R

1

C

P

6.4pF

IQ = 20mA

R

5

100Ω

G = 1 + = 3

R

3

2R

5

X

E

R

3

390Ω

15
10

5
0

–5
–10
–15
–20
–25

1M 10M 100M 1G

Frequency (Hz)

Output Voltage (dB)

OPA660 DIRECT-FEEDBACK FREQUENCY RESPONSE

20

–30

100k

0.2Vp-p

5Vp-p

2.8Vp-p

1.4Vp-p

0.6Vp-p

OPA660

OPA660

OPA660

®

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Internet: http://www.burr-brown.com/ • FAXLine: [phone] (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: [phone] • Immediate Product Info: [phone]

2

®

OPA660

SPECIFICATIONS

Typical at IQ = 20mA, VS = ±5V, TA = +25°C, and RL = 500Ω, unless otherwise specified.

OPA660AP, AU

PARAMETER CONDITIONS MIN TYP MAX UNITS

OTA TRANSCONDUCTANCE

Transconductance V

C

= 0V 75 125 200 mA/V

OTA INPUT OFFSET VOLTAGE V

B

= 0

Initial +10 ±30 mV

vs Temperature 50 µV/°C
vs Supply (tracking) V

S

= ±4.5V to ±5.5V 55 60 dB
vs Supply (non-tracking) V+ = 4.5V to 5.5V 40 45 dB
vs Supply (non-tracking) V– = –4.5V to –5.5V 40 48 dB

OTA B-INPUT BIAS CURRENT

Initial –2.1 ±5 µA

vs Temperature 5 nA/°C
vs Supply (tracking) V

S

= ±4.5V to ±5.5V ±750 nA/V
vs Supply (non-tracking) V+ = 4.5V to 5.5V ±1500 nA/V
vs Supply (non-tracking) V– = –4.5V to –5.5V ±500 nA/V

OTA OUTPUT BIAS CURRENT

Output Bias Current V

B

= 0, VC = 0V ±10 ±20 µA
vs Temperature 500 nA/°C
vs Supply (tracking) V

S

= ±4.5V to ±5.5V ±10 ±25 µA/V
vs Supply (non-tracking) V+ = 4.5V to 5.5V ±10 ±25 µA/V
vs Supply (non-tracking) V– = –4.5V to –5.5V ±10 ±25 µA/V

OTA OUTPUT

Output Current ±10 ± 15 mA
Output Voltage Compliance I

C

= ±1mA ±4.0 ± 4.7 V
Output Impedance 25k || 4.2 Ω || pF
Open-Loop Gain f = 1kHz 70 dB

BUFFER OFFSET VOLTAGE

Initial +7 ±30 mV

vs Temperature 50 µV/°C
vs Supply (tracking) V

S

= ±4.5V to ±5.5V 55 60 dB
vs Supply (non-tracking) V+ = 4.5V to 5.5V 40 45 dB
vs Supply (non-tracking) V– = –4.5V to –5.5V 40 48 dB

BUFFER INPUT BIAS CURRENT

Initial –2.1 ±5 µA

vs Temperature 5 nA/°C
vs Supply (tracking) V

S

= ±4.5V to ±5.5V ±750 nA/V
vs Supply (non-tracking) V+ = 4.5V to 5.5V ±1500 nA/V
vs Supply (non-tracking) V– = –4.5V to –5.5V ±500 nA/V

BUFFER and OTA INPUT IMPEDANCE

Input Impedance 1.0 || 2.1 MΩ || pF

BUFFER INPUT NOISE

Voltage Noise Density, f = 100kHz 4 nV/√Hz

BUFFER DYNAMIC RESPONSE

Small Signal Bandwidth V

O

= ±100mV 850 MHz

Full Power Bandwidth V

O

= ±1.4V 800 MHz

V

O

= ±2.5V 570 MHz
Differential Gain Error 3.58MHz, at 0.7V 0.06 %
Differential Phase Error 3.58MHz, at 0.7V 0.02 Degrees
Harmonic Distortion, 2nd Harmonic f = 10MHz, V

O

= 0.5Vp-p –68 dBc
Slew Rate 5V Step 3000 V/µs
Settling Time 0.1% 2V Step 25 ns
Rise Time (10% to 90%) V

O

= 100mVp-p 1 ns

5V Step 1.5 ns

Group Delay Time 250 ps

BUFFER RATED OUTPUT

Voltage Output I

O

= ±1mA ±3.7 ± 4.2 V
Current Output ±10 ± 15 mA
Gain R

L

= 500Ω 0.96 0.975 V/V

R

L

= 5kΩ 0.99 V/V

Output Impedance 7 || 2 Ω || pF

POWER SUPPLY

Voltage, Rated ±5V
Derated Performance ±4.5 ±5.5 V
Quiescent Current (Programmable, Useful Range) ±3 to ±26 mA

3

®

OPA660

The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.

ABSOLUTE MAXIMUM RATINGS

Power Supply Voltage .........................................................................±6V

Input Voltage

(1)

........................................................................ ±VS ±0.7V

Operating Temperature ................................................... –40°C to +85°C

Storage Temperature ..................................................... –40°C to +125°C

Junction Temperature .................................................................... +175°C

Lead Temperature (soldering, 10s)............................................... +300°C

NOTE: (1) Inputs are internally diode-clamped to ±V

S

.

Top View DIP/SO-8

I Adjust

E

B

V– = –5V

C

V+ = +5V

Out

In

1

2

3

4

8

7

6

5

Q

1

ELECTROSTATIC
DISCHARGE SENSITIVITY

This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.

ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.

PIN CONFIGURATION

PACKAGE
DRAWING TEMPERATURE

PRODUCT PACKAGE NUMBER

(1)

RANGE

OPA660AP 8-Pin Plastic DIP 006 –25°C to +85°C
OPA660AU SO-8 Surface-Mount 182 –25°C to +85°C

NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.

PACKAGE/ORDERING INFORMATION

4

®

OPA660

OTA TRANSFER CHARACTERISTICS

10

5

0

–5

–60 –40 –20 0 20 40 60

OTA Input Voltage (mV)

OTA Output Current (mA)

IQ = 20mA

IQ = 5mA

IQ = 10mA

–10

OTA C-OUTPUT RESISTANCE

vs TOTAL QUIESCENT CURRENT (I

Q

)

4

Total Quiescent Current — I

Q

(mA)

OTA Output Resistance (k )

6 8 10 12 14 16 18 20

Ω

60

50

40

30

20

10

0

OTA C-OUTPUT BIAS CURRENT vs TEMPERATURE

–20 –0 20 40 60 80 100

Temperature (°C)

OTA C-Output Bias Current (µA)

Trim Point

5 Representative

Units

–40

–20 40 100

Temperature (°C)

0.0

–1.0

–2.0

–3.0

–4.0

Input Bias Current (µA)

BUFFER AND OTA B-INPUT BIAS CURRENT

vs TEMPERATURE

80

–0 20 60

–5.0

TOTAL QUIESCENT CURRENT vs TEMPERATURE

–25 25 100

Temperature (°C)

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

Total Quiescent Current (Normalized)

05075

0.5

TYPICAL PERFORMANCE CURVES

IQ = 20mA, TA = +25°C, and VS = ±5V unless otherwise noted.

100 1.0k 10k

R — Resistor Value ( )

Q

Ω

100

30

10

3.0

Total Quiescent Current (mA)

TOTAL QUIESCENT CURRENT vs R

Q

300 3.0k

1.0

Nominal

Device

Low I

Q

Device

High I

Q

Device

5

®

OPA660

OTA TRANSCONDUCTANCE vs FREQUENCY

1M 10M

100M

1G

1000

100

OTA Transconductance (mA/V)

Frequency (Hz)

IQ = 20mA 106mA/V

IQ = 10mA 66mA/V

IQ = 5mA 40mA/V

RL = 50Ω

10

BUFFER SLEW RATE

vs TOTAL QUIESCENT CURRENT (I

Q

)

4

Total Quiescent Current—I

Q

(mA)

4000
3800
3600
3400
3200
3000
2800
2600
2400
2200

Slew Rate (V/µs)

6 8 10 12 14 16 18 20

Rising Edge

Falling Edge

2000

BUFFER OUTPUT AND OTA E-OUTPUT RESISTANCE

vs TOTAL QUIESCENT CURRENT (I

Q

)

Total Quiescent Current—I

Q

(mA)

Buffer Output and OTA E-Output Resistance (Ω)

4 6 8 10 12 14 16 18 20

40

30

20

10

0

R

OUTBUF

R

OUTOTA

BUFFER AND OTA B-INPUT RESISTANCE

vs TOTAL QUIESCENT CURRENT (I

Q

)

4

Total Quiescent Current — I (mA)

Buffer and OTA B-Input Resistance (MΩ)

6 8 10 12 14 16 18 20

Q

4

3

2

1

0

–1

R

INOTA

R

INBUF

BUFFER AND OTA B-INPUT OFFSET VOLTAGE

vs TEMPERATURE

–25

Temperature (°C)

20
15
10

5
0

–5
–10
–15

Offset Voltage (mV)

0 255075100

–20

TYPICAL PERFORMANCE CURVES (CONT)

IQ = 20mA, TA = +25°C, and VS = ±5V unless otherwise noted.

OTA TRANSCONDUCTANCE

vs TOTAL QUIESCENT CURRENT (I

Q

)

0

Total Quiescent Current—I

Q

(mA)

150

100

50

OTA Transconductance (mA/V)

4 6 8 1012 161820

0

214

6

®

OPA660

TRANSCONDUCTANCE vs INPUT VOLTAGE

160

120

80

40

0

–40 –30 –20 –10 0 10 20 30 40

RQ = 250Ω

RQ = 500Ω

R

Q

= 1kΩ

R

Q

= 2kΩ

Input Voltage (mV)

BUFFER MAX OUTPUT VOLTAGE vs FREQUENCY

10

0

Buffer Output Voltage (Vp-p)

1M 10M 100M 1G

Frequency (Hz)

0.1

15
10

5
0

–5
–10
–15
–20
–25

1M 10M 100M 1G

Frequency (Hz)

Output Voltage (dB)

0.2Vp-p

0.6Vp-p

1.4Vp-p

–3dB Point

I

Q

= 20mA RIN = 160Ω RL = 100Ω

20

BUFFER FREQUENCY RESPONSE

dB

2.8Vp-p

200k

BUFFER VOLTAGE NOISE SPECTRAL DENSITY

100

10

100 1k 10k 100k 1M 10M 100M

Frequency (Hz)

Voltage Noise (nV/ Hz)

1

TYPICAL PERFORMANCE CURVES (CONT)

IQ = 20mA, TA = +25°C, and VS = ±5V unless otherwise noted.

Transconductance (mA/V)

OTA PULSE RESPONSE

Output Voltage = 5Vp-p

–2.5V

+2.5V

0V

V

O

(V)

OTA PULSE RESPONSE

Input Voltage = 1.25Vp-p, t

R

= tF = 1ns, Gain = 4

–0.625V

+0.625V

0V

V

O

(V)