Burr Brown OPA660AP, OPA660AU-2K5, OPA660AU Datasheet

© 1990 Burr-Brown Corporation PDS-1072F Printed in U.S.A. April, 1995
Wide Bandwidth
OPERATIONAL TRANSCONDUCTANCE
AMPLIFIER AND BUFFER
APPLICA TIONS
BASE LINE RESTORE CIRCUITS
VIDEO/BROADCAST EQUIPMENT
COMMUNICATIONS EQUIPMENT
WIDEBAND LED DRIVER
AGC-MULTIPLIER
NS-PULSE INTEGRATOR
CONTROL LOOP AMPLIFIER
400MHz DIFFERENTIAL INPUT
AMPLIFIER
FEATURES
WIDE BANDWIDTH: 850MHz
HIGH SLEW RATE: 3000V/
µs
LOW DIFFERENTIAL GAIN/PHASE
ERROR: 0.06%/0.02
°
VERSATILE CIRCUIT FUNCTION
EXTERNAL I
Q
-CONTROL
DESCRIPTION
The OPA660 is a versatile monolithic component designed for wide-bandwidth systems including high performance video, RF and IF circuitry. It includes a wideband, bipolar integrated voltage-controlled cur­rent source and voltage buffer amplifier.
The voltage-controlled current source or Operational Transconductance Amplifier (OTA) can be viewed as an “ideal transistor.” Like a transistor, it has three terminals—a high-impedance input (base), a low­impedance input/output (emitter), and the current output (collector). The OTA, however, is self-biased and bipolar. The output current is zero-for-zero dif­ferential input voltage. AC inputs centered about zero produce an output current which is bipolar and cen­tered about zero. The transconductance of the OTA can be adjusted with an external resistor, allowing bandwidth, quiescent current and gain trade-offs to be optimized.
The open-loop buffer amplifier provides 850MHz bandwidth and 3000V/µs slew rate. Used as a basic building block, the OPA660 simplifies the design of AGC amplifiers, LED driver circuits for Fiber Optic Transmission, integrators for fast pulses, fast control loop amplifiers, and control amplifiers for capacitive sensors and active filters.
The OPA660 is packaged in SO-8 surface-mount, and 8-pin plastic DIP, specified from –40°C to +85°C.
OTA
B
E
C
3
8
2
56
+1
100
V
I
200
R
P
82
V
O
R
1
C
P
6.4pF
IQ = 20mA
R
5
100
G = 1 + = 3
R
3
2R
5
X
E
R
3
390
15 10
5 0
–5 –10 –15 –20 –25
1M 10M 100M 1G
Frequency (Hz)
Output Voltage (dB)
OPA660 DIRECT-FEEDBACK FREQUENCY RESPONSE
20
–30
100k
0.2Vp-p
5Vp-p
2.8Vp-p
1.4Vp-p
0.6Vp-p
OPA660
OPA660
OPA660
®
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
2
®
OPA660
SPECIFICATIONS
Typical at IQ = 20mA, VS = ±5V, TA = +25°C, and RL = 500Ω, unless otherwise specified.
OPA660AP, AU
PARAMETER CONDITIONS MIN TYP MAX UNITS
OTA TRANSCONDUCTANCE
Transconductance V
C
= 0V 75 125 200 mA/V
OTA INPUT OFFSET VOLTAGE V
B
= 0
Initial +10 ±30 mV
vs Temperature 50 µV/°C vs Supply (tracking) V
S
= ±4.5V to ±5.5V 55 60 dB vs Supply (non-tracking) V+ = 4.5V to 5.5V 40 45 dB vs Supply (non-tracking) V– = –4.5V to –5.5V 40 48 dB
OTA B-INPUT BIAS CURRENT
Initial –2.1 ±5 µA
vs Temperature 5 nA/°C vs Supply (tracking) V
S
= ±4.5V to ±5.5V ±750 nA/V vs Supply (non-tracking) V+ = 4.5V to 5.5V ±1500 nA/V vs Supply (non-tracking) V– = –4.5V to –5.5V ±500 nA/V
OTA OUTPUT BIAS CURRENT
Output Bias Current V
B
= 0, VC = 0V ±10 ±20 µA vs Temperature 500 nA/°C vs Supply (tracking) V
S
= ±4.5V to ±5.5V ±10 ±25 µA/V vs Supply (non-tracking) V+ = 4.5V to 5.5V ±10 ±25 µA/V vs Supply (non-tracking) V– = –4.5V to –5.5V ±10 ±25 µA/V
OTA OUTPUT
Output Current ±10 ± 15 mA Output Voltage Compliance I
C
= ±1mA ±4.0 ± 4.7 V Output Impedance 25k || 4.2 || pF Open-Loop Gain f = 1kHz 70 dB
BUFFER OFFSET VOLTAGE
Initial +7 ±30 mV
vs Temperature 50 µV/°C vs Supply (tracking) V
S
= ±4.5V to ±5.5V 55 60 dB vs Supply (non-tracking) V+ = 4.5V to 5.5V 40 45 dB vs Supply (non-tracking) V– = –4.5V to –5.5V 40 48 dB
BUFFER INPUT BIAS CURRENT
Initial –2.1 ±5 µA
vs Temperature 5 nA/°C vs Supply (tracking) V
S
= ±4.5V to ±5.5V ±750 nA/V vs Supply (non-tracking) V+ = 4.5V to 5.5V ±1500 nA/V vs Supply (non-tracking) V– = –4.5V to –5.5V ±500 nA/V
BUFFER and OTA INPUT IMPEDANCE
Input Impedance 1.0 || 2.1 M || pF
BUFFER INPUT NOISE
Voltage Noise Density, f = 100kHz 4 nV/Hz
BUFFER DYNAMIC RESPONSE
Small Signal Bandwidth V
O
= ±100mV 850 MHz
Full Power Bandwidth V
O
= ±1.4V 800 MHz
V
O
= ±2.5V 570 MHz Differential Gain Error 3.58MHz, at 0.7V 0.06 % Differential Phase Error 3.58MHz, at 0.7V 0.02 Degrees Harmonic Distortion, 2nd Harmonic f = 10MHz, V
O
= 0.5Vp-p –68 dBc Slew Rate 5V Step 3000 V/µs Settling Time 0.1% 2V Step 25 ns Rise Time (10% to 90%) V
O
= 100mVp-p 1 ns
5V Step 1.5 ns
Group Delay Time 250 ps
BUFFER RATED OUTPUT
Voltage Output I
O
= ±1mA ±3.7 ± 4.2 V Current Output ±10 ± 15 mA Gain R
L
= 500 0.96 0.975 V/V
R
L
= 5k 0.99 V/V
Output Impedance 7 || 2 || pF
POWER SUPPLY
Voltage, Rated ±5V Derated Performance ±4.5 ±5.5 V Quiescent Current (Programmable, Useful Range) ±3 to ±26 mA
3
®
OPA660
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems.
ABSOLUTE MAXIMUM RATINGS
Power Supply Voltage .........................................................................±6V
Input Voltage
(1)
........................................................................ ±VS ±0.7V
Operating Temperature ................................................... –40°C to +85°C
Storage Temperature ..................................................... –40°C to +125°C
Junction Temperature .................................................................... +175°C
Lead Temperature (soldering, 10s)............................................... +300°C
NOTE: (1) Inputs are internally diode-clamped to ±V
S
.
Top View DIP/SO-8
I Adjust
E
B
V– = –5V
C
V+ = +5V
Out
In
1
2
3
4
8
7
6
5
Q
1
ELECTROSTATIC DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PIN CONFIGURATION
PACKAGE DRAWING TEMPERATURE
PRODUCT PACKAGE NUMBER
(1)
RANGE
OPA660AP 8-Pin Plastic DIP 006 –25°C to +85°C OPA660AU SO-8 Surface-Mount 182 –25°C to +85°C
NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book.
PACKAGE/ORDERING INFORMATION
4
®
OPA660
OTA TRANSFER CHARACTERISTICS
10
5
0
–5
–60 –40 –20 0 20 40 60
OTA Input Voltage (mV)
OTA Output Current (mA)
IQ = 20mA
IQ = 5mA
IQ = 10mA
–10
OTA C-OUTPUT RESISTANCE
vs TOTAL QUIESCENT CURRENT (I
Q
)
4
Total Quiescent Current — I
Q
(mA)
OTA Output Resistance (k )
6 8 10 12 14 16 18 20
60
50
40
30
20
10
0
OTA C-OUTPUT BIAS CURRENT vs TEMPERATURE
–20 –0 20 40 60 80 100
Temperature (°C)
OTA C-Output Bias Current (µA)
Trim Point
5 Representative
Units
–40
–20 40 100
Temperature (°C)
0.0
–1.0
–2.0
–3.0
–4.0
Input Bias Current (µA)
BUFFER AND OTA B-INPUT BIAS CURRENT
vs TEMPERATURE
80
–0 20 60
–5.0
TOTAL QUIESCENT CURRENT vs TEMPERATURE
–25 25 100
Temperature (°C)
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Total Quiescent Current (Normalized)
05075
0.5
TYPICAL PERFORMANCE CURVES
IQ = 20mA, TA = +25°C, and VS = ±5V unless otherwise noted.
100 1.0k 10k
R — Resistor Value ( )
Q
100
30
10
3.0
Total Quiescent Current (mA)
TOTAL QUIESCENT CURRENT vs R
Q
300 3.0k
1.0
Nominal
Device
Low I
Q
Device
High I
Q
Device
5
®
OPA660
OTA TRANSCONDUCTANCE vs FREQUENCY
1M 10M
100M
1G
1000
100
OTA Transconductance (mA/V)
Frequency (Hz)
IQ = 20mA 106mA/V
IQ = 10mA 66mA/V
IQ = 5mA 40mA/V
RL = 50
10
BUFFER SLEW RATE
vs TOTAL QUIESCENT CURRENT (I
Q
)
4
Total Quiescent Current—I
Q
(mA)
4000 3800 3600 3400 3200 3000 2800 2600 2400 2200
Slew Rate (V/µs)
6 8 10 12 14 16 18 20
Rising Edge
Falling Edge
2000
BUFFER OUTPUT AND OTA E-OUTPUT RESISTANCE
vs TOTAL QUIESCENT CURRENT (I
Q
)
Total Quiescent Current—I
Q
(mA)
Buffer Output and OTA E-Output Resistance ()
4 6 8 10 12 14 16 18 20
40
30
20
10
0
R
OUTBUF
R
OUTOTA
BUFFER AND OTA B-INPUT RESISTANCE
vs TOTAL QUIESCENT CURRENT (I
Q
)
4
Total Quiescent Current — I (mA)
Buffer and OTA B-Input Resistance (M)
6 8 10 12 14 16 18 20
Q
4
3
2
1
0
–1
R
INOTA
R
INBUF
BUFFER AND OTA B-INPUT OFFSET VOLTAGE
vs TEMPERATURE
–25
Temperature (°C)
20 15 10
5 0
–5 –10 –15
Offset Voltage (mV)
0 255075100
–20
TYPICAL PERFORMANCE CURVES (CONT)
IQ = 20mA, TA = +25°C, and VS = ±5V unless otherwise noted.
OTA TRANSCONDUCTANCE
vs TOTAL QUIESCENT CURRENT (I
Q
)
0
Total Quiescent Current—I
Q
(mA)
150
100
50
OTA Transconductance (mA/V)
4 6 8 1012 161820
0
214
6
®
OPA660
TRANSCONDUCTANCE vs INPUT VOLTAGE
160
120
80
40
0
–40 –30 –20 –10 0 10 20 30 40
RQ = 250
RQ = 500
R
Q
= 1k
R
Q
= 2k
Input Voltage (mV)
BUFFER MAX OUTPUT VOLTAGE vs FREQUENCY
10
0
Buffer Output Voltage (Vp-p)
1M 10M 100M 1G
Frequency (Hz)
0.1
15 10
5 0
–5 –10 –15 –20 –25
1M 10M 100M 1G
Frequency (Hz)
Output Voltage (dB)
0.2Vp-p
0.6Vp-p
1.4Vp-p
–3dB Point
I
Q
= 20mA RIN = 160RL = 100
20
BUFFER FREQUENCY RESPONSE
dB
2.8Vp-p
200k
BUFFER VOLTAGE NOISE SPECTRAL DENSITY
100
10
100 1k 10k 100k 1M 10M 100M
Frequency (Hz)
Voltage Noise (nV/ Hz)
1
TYPICAL PERFORMANCE CURVES (CONT)
IQ = 20mA, TA = +25°C, and VS = ±5V unless otherwise noted.
Transconductance (mA/V)
OTA PULSE RESPONSE
Output Voltage = 5Vp-p
–2.5V
+2.5V
0V
V
O
(V)
OTA PULSE RESPONSE
Input Voltage = 1.25Vp-p, t
R
= tF = 1ns, Gain = 4
–0.625V
+0.625V
0V
V
O
(V)
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