Burr Brown OPA658N-250, OPA658P, OPA658NB-3K, OPA658U-2K5, OPA658UB-2K5 Datasheet

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1
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OPA658
FEATURES
UNITY GAIN STABLE BANDWIDTH:
900MHz
LOW POWER: 50mW
LOW DIFFERENTIAL GAIN/PHASE ERRORS:
°
HIGH SLEW RATE: 1700V/µs
GAIN FLATNESS: 0.1dB to 135MHz
HIGH OUTPUT CURRENT (80mA)
Wideband, Low Power Current Feedback
OPERATIONAL AMPLIFIER
APPLICATIONS
MEDICAL IMAGING
HIGH-RESOLUTION VIDEO
HIGH-SPEED SIGNAL PROCESSING
COMMUNICATIONS
PULSE AMPLIFIERS
ADC/DAC GAIN AMPLIFIER
MONITOR PREAMPLIFIER
CCD IMAGING AMPLIFIER
OPA658
DESCRIPTION
The OPA658 is an ultra-wideband, low power current feedback video operational amplifier featuring high slew rate and low differential gain/phase error. The current feedback design allows for superior large sig­nal bandwidth, even at high gains. The low differential gain/phase errors, wide bandwidth and low quiescent
current make the OPA658 a perfect choice for numer­ous video, imaging and communications applications.
The OPA658 is optimized for low gain operation and is also available in dual (OPA2658) and quad (OPA4658) configurations.
®
C
COMP
Current Mirror
In
In
+
V
OUT
I
BIAS
I
BIAS
+V
S
–V
S
Current Mirror
Buffer
OPA658
OPA658
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
© 1994 Burr-Brown Corporation PDS-1268F Printed in U.S.A. March, 1998
2
®
OPA658
FREQUENCY RESPONSE
Closed-Loop Bandwidth
(2)
G = +1
(4)
900
(1)
MHz G = +2 680 400 MHz G = +5 370 MHz
G = +10 200 MHz
Slew Rate
(3)
G = +2, 2V Step 1700 1000 V/µs
At Minimum Specified Temperature 1500 900 V/µs
Settling Time: 0.01% G = +2, 2V Step 15 ns
0.1% G = +2, 2V Step 11.5 ns 1% G = +2, 2V Step 6 ns
Spurious Free Dynamic Range f = 5MHz, G = +2, V
O
= 2Vp-p 68 dBc
f = 20MHz, G= +2, V
O
= 2Vp-p 56 dBc Third Order Intercept Point f = 10MHz, 4dBm Each Tone 40 dBm Differential Gain G = +2, NTSC, V
O
= 1.4Vp-p, RL = 150 0.025 %
Differential Phase G = +2, NTSC, V
O
= 1.4Vp-p, RL = 150 0.02 degrees
Bandwidth for 0.1dB Flatness G = +2 135
(5)
MHz
OFFSET VOLTAGE
Input Offset Voltage V
CM
= 0V ±3 ±5.5 ±2 ±4.5 mV
Over Temperature Range ±5 ±8 ±4 ±7mV
Power Supply Rejection Ratio V
S
= ±4.7 to ±5.5V 55 64 58 67 dB
INPUT BIAS CURRENT
Non-Inverting V
CM
= 0V ±5.7 ±30 ±18 µA
Over Temperature Range ±10 ±80 ±35 µA
Inverting V
CM
= 0V ±1.1 ±35 ✻✻ µA
Over Temperature Range ±30 ±75 ✻✻ µA
NOISE
Input Voltage Noise Density
f = 100Hz 16 nV/Hz f = 2kHz 4.9 nV/Hz f = 10kHz 3.2 nV/Hz f = 1MHz 3.2 nV/Hz f
B
= 100Hz to 200MHz 45.3 µVrms
Input Bias Current Noise Density
Inverting: f = 1MHz 32 pA/Hz Non-Inverting: f = 1MHz 11.9 pA/Hz
INPUT VOLTAGE RANGE
Common-Mode Input Range
Over Temperature Range ±2.5 ±2.9 ✻✻ V
Common-Mode Rejection V
CM
= ±1V 45 50 ✻✻ dB
INPUT IMPEDANCE
Non-Inverting 500 || 1 k || pF Inverting 50
OPEN-LOOP TRANSRESISTANCE
Open-Loop Transresistance V
O
= ±2V, RL = 100 150 190 200 250 k
Over Temperature Range V
O
= ±2V, RL = 100 100 150 k
OUTPUT
Voltage Output No Load ±2.7 ±2.9 ✻✻ V
Over Temperature Range ±2.5 ±2.75 ✻✻ V
Voltage Output R
L
= 250Ω±2.7 ±2.9 ✻✻ V
Over Temperature Range ±2.5 ±2.7 ✻✻ V
Voltage Output R
L
= 100Ω±2.2 ±2.8 ✻✻ V
Over Temperature Range ±2.0 ±2.5 ✻✻ V
Output Current, Sourcing 80 120 ✻✻ mA
Over Temperature 70 mA
Output Current, Sinking 60 80 ✻✻ mA
Over Temperature 35 mA Short Circuit Current 150 mA Output Resistance 0.1MHz, G = +2 0.02
POWER SUPPLY
Specified Operating Voltage ±5 V Operating Voltage Range ±4.5 ±5.5 ✻✻V Quiescent Current V
S
= ±5V ±5 ±7.75 ±4.5 ±5.75 mA
Over Temperature Range ±5.5 ±8.5 ±4.7 ±6.5 mA
TEMPERATURE RANGE
Specification: P, U, N, UB, NB –40 +85 ✻✻°C Thermal Resistance,
θ
JA
P 8-Pin DIP 100 °C/W
U SO-8 125 °C/W
N SOT23-5 150 °C/W
NOTES: (1) An asterisk () specifies the same value as the grade to the left. (2) Frequency response can be strongly influenced by PC board parasitics. The demonstration boards show low parasitic layouts for this part. Refer to the demonstration board layout for details. (3) Slew rate is rate of change from 10% to 90% of output voltage step. (4) At G = +1, R
FB
= 560 for PDIP and 402 for SO-8. (5) This specification is PC board layout dependent.
SPECIFICATIONS
At TA = +25°C, VS = ±5V, RL = 100, and RFB = 402Ω, unless otherwise noted.
OPA658P, U, N OPA658UB, NB
PARAMETER CONDITION MIN TYP MAX MIN TYP MAX UNITS
3
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OPA658
1
2 3 4
8
7 6 5
NC
+V
S
Output NC
NC
–Input +Input
–V
S
1
2
3
54+V
S
–Input
Output
–V
S
+Input
Top View DIP/SO-8
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems.
PIN CONFIGURATION
Supply ............................................................................................... ±5.5V
Internal Power Dissipation .......................... See Thermal Considerations
Differential Input Voltage .................................................................. ±1.2V
Input Voltage Range ............................................................................ ± V
S
Storage Temperature Range: P, U, UB, N, NB ............ –40°C to +125°C
Lead Temperature (soldering, 10s).............................................. +300°C
(soldering, SOIC 3s) ...................................................................... +260°C
Junction Temperature (T
J
) ............................................................ +175°C
ABSOLUTE MAXIMUM RATINGS
ELECTROSTATIC DISCHARGE SENSITIVITY
Electrostatic discharge can cause damage ranging from per­formance degradation to complete device failure. Burr-Brown Corporation recommends that all integrated circuits be handled and stored using appropriate ESD protection methods.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet published speci­fications.
SOT23-5
PACKAGE DRAWING TEMPERATURE PACKAGE ORDERING
PRODUCT PACKAGE NUMBER
(1)
RANGE MARKING
(2)
NUMBER
(3)
OPA658U SO-8 Surface Mount 182 –40°C to +85°C OPA658U OPA658U OPA658UB SO-8 Surface Mount 182 –40°C to +85°C OPA658UB OPA658UB OPA658N 5-pin SOT23-5 331 –40°C to +85°C A58 OPA658N-250
OPA658N-3k
OPA658NB 5-pin SOT23-5 331 –40°C to +85°C A58B OPA658NB-250
OPA658NB-3k
OPA658P 8-Pin Plastic DIP 006 –40°C to +85°C OPA658P OPA658P
NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book. (2) The “B” grade of the SO-8 will be marked with a “B” by pin 8. The “B” grade of the SOT23-5 will be marked with a “B” near pins 3 and 4. (3) The SOT23-5 is only available on a 7" tape and reel (e.g. ordering 250 pieces of “OPA658N-250” will get a single 250 piece tape and reel. Ordering 3000 pieces of “OPA658N-3k” will get a single 3000 piece tape and reel). Please refer to Appendix B of Burr-Brown IC Data Book for detailed Tape and Reel Mechanical information.
PACKAGE/ORDERING INFORMATION
4
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OPA658
TYPICAL PERFORMANCE CURVES
At TA = +25°C, VS = ±5V, RL = 100, and RFB = 402Ω, unless otherwise noted.
55
50
45
40
35
30
25
–4 –3 –2 –1 0 1 2 3 4
COMMON-MODE REJECTION
vs INPUT COMMON-MODE VOLTAGE
Common-Mode Rejection (dB)
Common-Mode Voltage (V)
SUPPLY CURRENT vs TEMPERATURE
5
4
–75 –50 –25 0 25 50 75 100 125
Ambient Temperature (°C)
Supply Current (±mA)
NON-INVERTING INPUT BIAS CURRENT
vs TEMPERATURE
–75 –50 –25 0 25 50 75 100 125
Ambient Temperature (°C)
Non-Inverting Input Bias Current I
B
+ (µA)
10
8
6
4
2
3.20
3.10
3.0
2.90
2.80
2.70
2.60
2.50
2.40
2.30
OUTPUT SWING vs TEMPERATURE
Temperature (°C)
–60 –40 –20 0 20 40 60 80 100
Output Swing (V)
+V
O
–V
O
RL = 250
RL = 100
–V
O
+V
O
PSRR AND CMR vs TEMPERATURE
75
70
65
60
55
50
45
–75 –50 –25 0 25 50 75 100 125
PSRR , CMR (dB)
CMR
PSR–
Temperature (°C)
PSR+
PSRR
120
110
100
90
80
70
–75 –50 –25 0 25 50 75 100 125
OUTPUT CURRENT vs TEMPERATURE
Ambient Temperature (°C)
Output Current (±mA)
IO–
I
O
+
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