BURR-BROWN OPA132, OPA2132, OPA4132 User Manual

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FET-INPUT OPERATIONAL AMPLIFIERS

O

P

A

O

P

A

1

3

2

O

1

3

2

O

P

A

2

1

3

2

High-Speed

P

A

2

1

3

O

2

P

A

4

1

3

2

O

PA4132

OPA132
OPA2132
OPA4132

SBOS054A – JANUARY 1995 – REVISED JUNE 2004

FEATURES

● FET INPUT: IB = 50pA max

● WIDE BANDWIDTH: 8MHz

● HIGH SLEW RATE: 20V/µs

● LOW NOISE: 8nV/√Hz (1kHz)

● LOW DISTORTION: 0.00008%

● HIGH OPEN-LOOP GAIN: 130dB (600Ω load)

● WIDE SUPPLY RANGE: ±2.5 to ±18V

● LOW OFFSET VOLTAGE: 500µV max

● SINGLE, DUAL, AND QUAD VERSIONS

DESCRIPTION

The OPA132 series of FET-input op amps provides high­speed and excellent dc performance. The combination of
high slew rate and wide bandwidth provide fast settling time.
Single, dual, and quad versions have identical specifications
for maximum design flexibility. High performance grades
are available in the single and dual versions. All are ideal for
general-purpose, audio, data acquisition and communica­tions applications, especially where high source impedance
is encountered.

OPA132 op amps are easy to use and free from phase
inversion and overload problems often found in
common FET-input op amps. Input cascode circuitry pro­vides excellent common-mode rejection and
maintains low input bias current over its wide input voltage
range. OPA132 series op amps are stable in unity gain and
provide excellent dynamic behavior over a wide range of
load conditions, including high load capacitance. Dual and
quad versions feature completely independent circuitry for
lowest crosstalk and freedom from interaction, even when
overdriven or overloaded.

Single and dual versions are available in 8-pin DIP and
SO-8 surface-mount packages. Quad is available in 14-pin
DIP and SO-14 surface-mount packages. All are specified
for –40°C to +85°C operation.

Offset Trim

–In
+In

V–

Out A

–In A
+In A

V–

Out A

–In A
+In A

V+
+In B
–In B

Out B

OPA132

1
2
3
4

8-Pin DIP, SO-8

OPA2132

1

A

2
3
4

8-Pin DIP, SO-8

1
2
3
4
5
6
7

AD

BC

14-Pin DIP

B

OPA4132

SO-14

8
7
6
5

8
7
6
5

Offset Trim
V+
Output
NC

V+
Out B
–In B
+In B

Out D

14

–In D

13

+In D

12

V–

11

+In C

10

–In C

9

Out C

8

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

Copyright © 1995-2004, Texas Instruments Incorporated

www.ti.com

ABSOLUTE MAXIMUM RATINGS

Supply Voltage, V+ to V–.................................................................... 36V

Input Voltage ..................................................... (V–) –0.7V to (V+) +0.7V

Output Short-Circuit

Operating Temperature .................................................. –40°C to +125°C

Storage Temperature ..................................................... –55°C to +125°C

Junction Temperature...................................................................... 150 °C

Lead Temperature (soldering, 10s)................................................. 300 °C

NOTE: (1) Short-circuit to ground, one amplifier per package.

(1)

.............................................................. Continuous

PACKAGE/ORDERING INFORMATION

For the most current package and ordering information,
see the Package Option Addendum located at the end
of this data sheet.

ELECTROSTATIC
DISCHARGE SENSITIVITY

This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handled with appropriate precautions. Failure to ob­serve proper handling and installation procedures can
cause damage.

ESD damage can range from subtle performance deg­radation to complete device failure. Precision inte­grated circuits may be more susceptible to damage
because very small parametric changes could cause
the device not to meet its published specifications.

2

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OPA132, 2132, 4132

SBOS054A

SPECIFICATIONS

At TA = +25°C, VS = ±15V, unless otherwise noted.

OPA132P, U

OPA2132P, U
PARAMETER CONDITION MIN TYP MAX MIN TYP MAX UNITS
OFFSET VOLTAGE

Input Offset Voltage ±0.25 ±0.5 ±0.5 ±2mV

vs Temperature
vs Power Supply V

Channel Separation (dual and quad) R

INPUT BIAS CURRENT

Input Bias Current

vs Temperature See Typical Curve ✻

Input Offset Current

(1)

(2)

(2)

Operating Temperature Range ±2 ±10 ✻✻µV/°C

= ±2.5V to ±18V 5 15 ✻ 30 µV/V

S

= 2kΩ 0.2 ✻ µV/V

L

V

= 0V +5 ±50 ✻✻ pA

CM

V

= 0V ±2 ±50 ✻✻ pA

CM

NOISE

Input Voltage Noise

Noise Density, f = 10Hz 23 ✻ nV/√Hz

f = 100Hz 10 ✻ nV/√Hz
f = 1kHz 8 ✻ nV/√Hz
f = 10kHz 8 ✻ nV/√Hz

Current Noise Density, f = 1kHz 3 ✻ fA/√Hz

INPUT VOLTAGE RANGE

Common-Mode Voltage Range (V–)+2.5 ±13 (V+)–2.5 ✻✻✻ V
Common-Mode Rejection V

INPUT IMPEDANCE

Differential 10
Common-Mode V

= –12.5V to +12.5V 96 100 86 94 dB

CM

13

|| 2 ✻ Ω || pF

= –12.5V to +12.5V 10

CM

13

|| 6 ✻ Ω || pF

OPEN-LOOP GAIN

Open-Loop Voltage Gain R

= 10kΩ, VO = –14.5V to +13.8V 110 120 104 ✻ dB

L

R

= 2kΩ, VO = –13.8V to +13.5V 110 126 104 120 dB

L

R

= 600Ω, VO = –12.8V to +12.5V 110 130 104 120 dB

L

FREQUENCY RESPONSE

Gain-Bandwidth Product 8 ✻ MHz
Slew Rate ±20 ✻ V/µs
Settling Time: 0.1% G = –1, 10V Step, C

0.01% G = –1, 10V Step, C
Overload Recovery Time G = ±1 0.5 ✻ µs
Total Harmonic Distortion + Noise 1kHz, G = 1, V

R

R

L

= 100pF 0.7 ✻ µs

L

= 100pF 1 ✻ µs

L

= 3.5Vrms

O

= 2kΩ 0.00008 ✻ %

L

= 600Ω 0.00009 ✻ %

OUTPUT

Voltage Output, Positive R

Negative (V–)+0.5 (V–)+0.3 ✻✻ V
Positive R
Negative (V–)+1.2 (V–)+0.9 ✻✻ V
Positive R
Negative (V–)+2.2 (V–)+1.9 ✻✻ V

= 10kΩ (V+)–1.2 (V+)–0.9 ✻✻ V

L

= 2kΩ (V+)–1.5 (V+)–1.2 ✻✻ V

L

= 600Ω (V+)–2.5 (V+)–2.0 ✻✻ V

L

Short-Circuit Current ±40 ✻ mA
Capacitive Load Drive (Stable Operation) See Typical Curve ✻

POWER SUPPLY

Specified Operating Voltage ±15 ✻ V
Operating Voltage Range ±2.5 ±18 ✻✻V
Quiescent Current (per amplifier) I

= 0 ±4 ±4.8 ✻✻ mA

O

TEMPERATURE RANGE

Operating Range –40 +85 ✻✻°C
Storage –40 +125 ✻✻°C
Thermal Resistance,

8-Pin DIP 100 ✻ °C/W

θ

JA

SO-8 Surface-Mount 150 ✻ °C/W
14-Pin DIP 80 ✻ °C/W
SO-14 Surface-Mount 110 ✻ °C/W

✻ Specifications same as OPA132P, OPA132U.
NOTES: (1) Guaranteed by wafer test. (2) High-speed test at T

= 25°C.

J

OPA132PA, UA
OPA2132PA, UA
OPA4132PA, UA

OPA132, 2132, 4132

SBOS054A

www.ti.com

3

TYPICAL PERFORMANCE CURVES

At TA = +25°C, VS = ±15V, RL = 2kΩ, unless otherwise noted.

160
140
120
100

80
60
40

Voltage Gain (dB)

20

0

–20

1k

100

OPEN-LOOP GAIN/PHASE vs FREQUENCY

G

0.1 1 10 100 1k 10k 100k 1M 10M
Frequency (Hz)

INPUT VOLTAGE AND CURRENT NOISE

SPECTRAL DENSITY vs FREQUENCY

POWER SUPPLY AND COMMON-MODE REJECTION

0

–45

φ

–90

–135

–180

Phase Shift (°)

120

100

80

60

40

PSR, CMR (dB)

20

0

10 100 1k 10k 100k 1M

160

140

CHANNEL SEPARATION vs FREQUENCY

vs FREQUENCY

–PSR

+PSR

CMR

Frequency (Hz)

RL = ∞

10

Current Noise (fA/√Hz)

Voltage Noise (nV/√Hz)

1

1

100k

10k

1k

100

10

Input Bias Current (pA)

1

0.1
–75 –50 –25 0 25 50 75 100 125

Voltage Noise

Current Noise

10 100 1k 10k 100k 1M

Frequency (Hz)

INPUT BIAS CURRENT vs TEMPERATURE

High Speed Test
Warmed Up

Quad

Dual

Single

Ambient Temperature (°C)

120

Dual and quad devices.
G = 1, all channels.
Quad measured channel

100

Channel Separation (dB)

A to D or B to C—other
combinations yield improved
rejection.

80

100 1k 10k 100k

Frequency (Hz)

INPUT BIAS CURRENT

10

9
8
7
6
5
4
3

Input Bias Current (pA)

2
1
0

–15 –10 –50 51015

vs INPUT COMMON-MODE VOLTAGE

High Speed Test

Common-Mode Voltage (V)

RL = 2kΩ

4

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OPA132, 2132, 4132

SBOS054A

TYPICAL PERFORMANCE CURVES (Cont.)

OFFSET VOLTAGE DRIFT

PRODUCTION DISTRIBUTION

Percent of Amplifiers (%)

Offset Voltage Drift (µV/°C)

12

10

8

6

4

2

0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

7.5

8.0

Typical production distribution

of packaged units. Single,

dual and quad units included.

MAXIMUM OUTPUT VOLTAGE

vs FREQUENCY

Frequency (Hz)

10k 100k 1M 10M

30

20

10

0

Output Voltage (Vp-p)

VS = ±15V

VS = ±2.5V

VS = ±5V

Maximum output voltage

without slew-rate

induced distortion

At TA = +25°C, VS = ±15V, RL = 2kΩ, unless otherwise noted.

130

120

110

, CMR, PSR (dB)

OL

A

100

90

–75 –50 –25 0 25 50 75 100 125

12

10

8

AOL, CMR, PSR vs TEMPERATURE

Open-Loop

Gain

PSR

CMR

Ambient Temperature (°C)

OFFSET VOLTAGE

PRODUCTION DISTRIBUTION

Typical production

distribution of packaged

units. Single, dual and

quad units included.

QUIESCENT CURRENT AND SHORT-CIRCUIT CURRENT

4.3

4.2

4.1

4.0

3.9

Quiescent Current Per Amp (mA)

3.8
–75 –50 –25 0 25 50 75 100 125

vs TEMPERATURE

±I

Q

Ambient Temperature (°C)

60

50

±I

SC

40

30

Short-Circuit Current (mA)

20

10

6

4

Percent of Amplifiers (%)

2

0

–800

–1400

–1200

TOTAL HARMONIC DISTORTION + NOISE

0.01

0.001

0.0001

THD+Noise (%)

0.00001

R

L

2kΩ
600Ω

G = +10

G = +1

10 100 1k 10k 100k

–600

–1000

Offset Voltage (µV)

0

–200

200

–400

vs FREQUENCY

Frequency (Hz)

400

600

800

VO = 3.5Vrms

1000

1200

1400

OPA132, 2132, 4132

SBOS054A

www.ti.com

5