Burr Brown ISO422P Datasheet

®

ISO422

ISO422

ISO422

DIFFERENTIAL BUS TRANSCEIVER

FEATURES

● FULL-/HALF-DUPLEX OPERATION

● 1500Vrms ISOLATION (cont)

● 2500Vrms ISOLATION (1 min)

● 2.5Mbps PERFORMANCE

● LOOP-TEST FACILITY

APPLICATIONS

● BUS TRANSMISSION SYSTEMS

● GROUND LOOP ISOLATION

DE

D

DESCRIPTION

ISO422 provides 1500Vrms isolation for industrial
bus transmission systems. ISO422 may be configured
in full or half duplex modes providing the user with
best flexibility for the application. Transmission rates
of 2.5Mbps can be obtained covering most require­ments. A loop-back test facility is included. LBE
allows data on the D input to be routed to the R output
for test purposes.

ISO422 is available in 24-pin PDIP and 24-pin Gull

(1)

Wing

packages and is specified over the temperature

range –40°C to +85°C.

NOTE: (1) Gull Wing version available Q1’99.

Y

Z

LBE

R

RE

International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: [phone]

Twx: 910-952-1111 • Internet: http://www.burr-brown.com/ • Cable: BBRCORP • Telex: 066-6491 • FAX: [phone] • Immediate Product Info: [phone]

©

1998 Burr-Brown Corporation PDS-1503A Printed in U.S.A. December, 1998

A

B

SPECIFICATIONS

At TA = +25°C, and VS = +5V, unless otherwise noted.

ISO422P, P-U

(1)

PARAMETER CONDITIONS MIN TYP MAX UNITS

ISOLATION

Rated Continuous Isolation V

ISO

Partial Discharge Voltage 1s, 5 x 5pC/per cycle

50Hz, 60Hz 1500 V

(2)

2500 V
Barrier Impedance > 1014 || 10 Ω || pF
Leakage Current 240V, 60Hz 1 µA

2500V, 50Hz 10 µA
Creepage Distance 8.6 mm
Internal Isolation Distance 0.1 mm
Transient Recovery Time 5kV/µs Edge 1 µs

DRIVER DC CHARACTERISTICS

High Level Input Voltage V
Low Level Input Voltage V
Input Leakage Current I
Input Capacitance C
Output Voltage V

Differential Output Voltage V

IH

IL

L

IN

O

OD

D and DE Inputs
D and DE Inputs
D and DE Inputs
D and DE Inputs

VY or V

IOY or IOZ = 0 1.5 5 V

(3)
(3)
(3)
(3)

Z

2V

0.8 V
5nA
5pF

05V

RL = 100Ω 2 3.6 5 V

Change in Mag Diff Out Voltage ∆|V
Common-Mode Output Voltage V
Change in Mag CM Out Voltage ∆|VOC|R
Output Current I

|R

OD

OC

O

= 100Ω or 54Ω

L

RL = 100Ω or 54Ω 3V

= 100Ω or 54Ω

L

VO = V

CC2

, Output Disabled ±10 ±1000 nA

RL = 54Ω 1.5 2.8 5 V

(4)

(4)

±40 ±200 mV

±40 ±200 mV

VO = 0V, Output Disabled ±10 ±1000 nA

Short-Circuit Output Current VO = V

, Continuous 100 mA

CC2

V

= 0V, Continuous –110 mA

O

DRIVER SWITCHING CHARACTERISTICS (Figure 6)

Differential Output Delay Time t
Skew |t

DDH

- t

|R

DDL

Differential Output Transition Time t
Output Enable Time to HIGH t
Output Enable Time to LOW t
Output Disable Time from HIGH t
Output Disable Time from LOW t

DD

DT

DZH

DZL

DHZ

DLZ

RL = 54Ω 120 150 ns

= 54Ω 25 50 ns

L

RL = 54Ω 100 ns
RL = 100Ω 120 150 ns
RL = 100Ω 120 150 ns
RL = 100Ω 120 150 ns
RL = 100Ω 120 150 ns

RECEIVER DC CHARACTERISTICS

High Level Output Voltage V
Low Level Output Voltage V
Output Short-Circuit Current I
Output HI-Z Leakage I
Enable Input HIGH Threshold V
Enable Input LOW Threshold V
Input Leakage Current I
Input Capacitance C

Differential Input HIGH Threshold V
Differential Input LOW Threshold V

OH

OL

OS

OZ

IH

IL

L

IN

TH

TL

IOH = 6mA V

– 1 V

CC

IOL = 6mA 0.4 V

1s max 30 mA

V

= 0V to V

OUT

RE Input
RE Input
RE Input
RE Input

CC1

(3)
(3)
(3)
(3)

2V

±10 ±1000 nA

0.8 V
5nA
5pF

VO = 2.8V 100 200 mV

VO = 0.4V –200 –100 mV
Input Hysteresis See Note 5 60 mV
Line Input Current I
Line Voltage V
Input Resistance R

Power On (GNDB < VBI < VSB) ±10 ±1000 nA

BI

Power Off (IBI ±10mA max) ±12 V

BI
IN

1MΩ

RECEIVER SWITCHING CHARACTERISTICS (Figure 7)

Propagation Delay L to H t
Propagation Delay H to L t
Skew |t

- t

| 40 ns

RLH

RHL

Output Rise Time t
Output Fall Time t
Output Enable Time to HIGH t
Output Enable Time to LOW t
Output Disable Time from HIGH t
Output Disable Time from LOW t

VID = –1.5V to 1.5V, CL = 10pF 120 150 ns

RLH

VID = 1.5V to –1.5V, CL = 10pF 120 150 ns

RHL

R
F

RZH

RZL

RHZ

RLZ

CL = 10pF 10 ns

CL = 10pF 10 ns

CL = 10pF 15 25 ns

CL = 10pF 15 25 ns

CL = 10pF 15 25 ns

CL = 10pF 15 25 ns

®

ISO422

2

SPECIFICATIONS (CONT)

At TA = +25°C, and VS = +5V, unless otherwise noted.

ISO422P, P-U

PARAMETER CONDITIONS MIN TYP MAX UNITS

POWER

Supply Voltage—Data Side V
Supply Current—Data Side I
Supply Current—Data Side I
Supply Voltage—Bus Side V
Supply Voltage—Bus Side I

BUS LIMITS

Input Current ±10 mA
Maximum Differential Input ±5V
Maximum Data Rate 2.5 Mbps

TEMPERATURE RANGE

Operating –40 +85 °C
Storage –40 +125 °C
Thermal Resistance

NOTES: (1) Gull Wing version available Q1’99. (2) All devices receive a 1s test. Failure criterion is > 5 pulses of > 5pC per cycle. (3) Logic inputs are HCT-type
and thresholds are a function of power supply voltage with approximately 100mV hysteresis. (4) Change in magnitude when the input is changed from HIGH to
LOW. (5) The difference between the differential low to high and high to low transition points.

PIN CONFIGURATION

Top View DIP

1

DE

2

D

3

NC

4

V

SA

SA
SA
SA
SB
SB

θ

JA

Output Unloaded, dc 10 13 mA

Output Unloaded, max Rate 20 mA

Output Unloaded, dc 12 20 mA

Output Unloaded, max Rate 20 mA

ABSOLUTE MAXIMUM RATINGS

Supply Voltage: VSA............................................................. –0.5V to +6V

Continuous Isolation Voltage .....................................................1500Vrms

Storage Temperature...................................................... –40°C to +125°C

Lead Temperature (soldering, 10s) ............................................... +300°C

24

RE

23

R

22

LBE

21

GND

A

PACKAGE INFORMATION

PRODUCT PACKAGE NUMBER

ISO422P 24-Pin Plastic DIP 243-4
ISO422P-U 24-Pin Gull Wing Surface Mount 243-5

NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.

4.5 5.5 V

4.5 5.5 V

............................................................. –0.5V to +6V

V

SB

(1)

75 °C/W

PACKAGE DRAWING

(1)

GND
GND

9

B

10

B

11

Y

12

Z

16

V

SB

15

V

SB

14

A

13

B

Electrostatic discharge can cause damage ranging from per-

ELECTROSTATIC
DISCHARGE SENSITIVITY

formance degradation to complete device failure. Burr­Brown Corporation recommends that all integrated circuits
be handled and stored using appropriate ESD protection
methods.

ESD damage can range from subtle performance degrada­tion to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet
published specifications.

The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN
assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject
to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not
authorize or warrant any BURR-BROWN product for use in life support devices and/or systems.

3

ISO422

®