Burr Brown INA129UA-2K5, INA129U, INA129PA, INA128UA, INA128U-2K5 Datasheet

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©1995 Burr-Brown Corporation PDS-1296C Printed in U.S.A. October, 1996
A
1
A
2
A
3
40k40k
40k40k
V
IN
2
1
8
3
6
5
V
IN
R
G
V–
INA128, INA129
Ref
V
O
INA128:
G = 1 +
50k
R
G
INA129:
G = 1 +
49.4k R
G
+
Over-Voltage
Protection
25k
(1)
25k
(1)
Over-Voltage
Protection
4
7
NOTE: (1) INA129: 24.7k
FEATURES
LOW OFFSET VOLTAGE: 50µV max
LOW DRIFT: 0.5
µV/°C max
LOW INPUT BIAS CURRENT: 5nA max
HIGH CMR: 120dB min
INPUTS PROTECTED TO
±40V
WIDE SUPPLY RANGE:
±2.25 to ±18V
LOW QUIESCENT CURRENT: 700
µA
8-PIN PLASTIC DIP, SO-8
DESCRIPTION
The INA128 and INA129 are low power, general purpose instrumentation amplifiers offering excellent accuracy. Their versatile 3-op amp design and small size make them ideal for a wide range of applications. Current-feedback input circuitry provides wide band­width even at high gain (200kHz at G = 100).
A single external resistor sets any gain from 1 to 10,000. INA128 provides an industry standard gain equation; INA129’s gain equation is compatible with the AD620.
The INA128/INA129 is laser trimmed for very low offset voltage (50µV), drift (0.5µV/°C) and high com­mon-mode rejection (120dB at G 100). It operates with power supplies as low as ±2.25V, and quiescent current is only 700µA—ideal for battery operated systems. Internal input protection can withstand up to ±40V without damage.
The INA128/INA129 is available in 8-pin plastic DIP, and SO-8 surface-mount packages, specified for the –40°C to +85°C temperature range. The INA128 is also available in dual configuration, the INA2128.
Precision, Low Power
INSTRUMENT ATION AMPLIFIERS
®
INA128 INA129
APPLICA TIONS
BRIDGE AMPLIFIER
THERMOCOUPLE AMPLIFIER
RTD SENSOR AMPLIFIER
MEDICAL INSTRUMENTATION
DATA ACQUISITION
INA128
INA128
INA129
INA129
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Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
SPECIFICATIONS
At TA = +25°C, VS = ±15V, RL = 10kΩ, unless otherwise noted.
INA128P, U INA128PA, UA INA129P, U INA129PA, UA
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
Specification same as INA128P, U or INA129P, U. NOTE: (1) Input common-mode range varies with output voltage—see typical curves. (2) Guaranteed by wafer test. (3) Temperature coefficient of the 50k (or 49.4k) term in the gain equation. (4) Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%.
INPUT
Offset Voltage, RTI
Initial T
A
= +25°C ±10 ±100/G ±50 ±500/G ±25 ±100/G ±125 ±1000/G µV
vs Temperature T
A
= T
MIN
to T
MAX
±0.2 ± 2/G ±0.5 ± 20/G ±0.2 ± 5/G ±1 ± 20/G µV/°C
vs Power Supply V
S
= ±2.25V to ±18V ±0.2 ±20/G ±1 ±100/G ±2 ±200/G µV/V
Long-Term Stability ±0.1 ±3/G µV/mo
Impedance, Differential 10
10
|| 2 || pF
Common-Mode 10
11
|| 9 || pF
Common-Mode Voltage Range
(1)
VO = 0V (V+) – 2 (V+) – 1.4 ✻✻ V
(V–)
+ 2 (V–) + 1.7 ✻✻ V Safe Input Voltage ±40 V Common-Mode Rejection V
CM
= ±13V, RS = 1k
G=1 80 86 73 dB
G=10 100 106 93 dB
G=100 120 125 110 dB
G=1000 120 130 110 dB
BIAS CURRENT ±2 ±5 ±10 nA
vs Temperature ±30 pA/°C
Offset Current ±1 ±5 ±10 nA
vs Temperature ±30 pA/°C
NOISE VOLTAGE, RTI G = 1000, R
S
= 0 f = 10Hz 10 nV/Hz f = 100Hz 8 nV/Hz f = 1kHz 8 nV/Hz f
B
= 0.1Hz to 10Hz 0.2 µVp-p
Noise Current
f=10Hz 0.9 pA/Hz f=1kHz 0.3 pA/Hz f
B
= 0.1Hz to 10Hz 30 pAp-p
GAIN
Gain Equation, INA128 1 + (50k/R
G
) V/V
INA129
1 + (49.4k/RG)
V/V Range of Gain 1 10000 ✻✻V/V Gain Error G=1 ±0.01 ±0.024 ±0.1 %
G=10 ±0.02 ±0.4 ±0.5 %
G=100 ±0.05 ±0.5 ±0.7 %
G=1000 ±0.5 ±1 ±2%
Gain vs Temperature
(2)
G=1 ±1 ±10 ✻✻ppm/°C
50k (or 49.4k) Resistance
(2, 3)
±25 ±100 ✻✻ppm/°C
Nonlinearity V
O
= ±13.6V, G=1 ±0.0001 ±0.001 ±0.002 % of FSR
G=10 ±0.0003 ±0.002 ±0.004 % of FSR
G=100 ±0.0005 ±0.002 ±0.004 % of FSR
G=1000 ±0.001 (Note 4) ✻✻% of FSR
OUTPUT
Voltage: Positive R
L
= 10k (V+) – 1.4 (V+) – 0.9 ✻✻ V
Negative R
L
= 10k (V–) + 1.4 (V–) + 0.8 ✻✻ V Load Capacitance Stability 1000 pF Short-Circuit Current +6/–15 mA
FREQUENCY RESPONSE
Bandwidth, –3dB G=1 1.3 MHz
G=10 700 kHz
G=100 200 kHz
G=1000 20 kHz
Slew Rate V
O
= ±10V, G=10 4 V/µs
Settling Time, 0.01% G=1 7 µs
G=10 7 µs
G=100 9 µs
G=1000 80 µs
Overload Recovery 50% Overdrive 4 µs
POWER SUPPLY
Voltage Range ±2.25 ±15 ±18 ✻✻ ✻V Current, Total V
IN
= 0V ±700 ±750 ✻✻µA
TEMPERATURE RANGE
Specification –40 85 ✻✻°C Operating –40 125 ✻✻°C
θ
JA
8-Pin Dip 80 °C/W SO-8 SOIC 150 °C/W
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems.
ELECTROSTATIC DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown recommends that all integrated circuits be handled with ap­propriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION
PACKAGE DRAWING TEMPERATURE
PRODUCT PACKAGE NUMBER
(1)
RANGE
INA128PA 8-Pin Plastic DIP 006 –40°C to +85°C INA128P 8-Pin Plastic DIP 006 –40°C to +85°C INA128UA SO-8 Surface-Mount 182 –40°C to +85°C INA128U SO-8 Surface-Mount 182 –40°C to +85°C
INA129PA 8-Pin Plastic DIP 006 –40°C to +85°C INA129P 8-Pin Plastic DIP 006 –40°C to +85°C INA129UA SO-8 Surface-Mount 182 –40°C to +85°C INA129U SO-8 Surface-Mount 182 –40°C to +85°C
NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book.
PIN CONFIGURATION
8-Pin DIP and SO-8
R
G
V
IN
V
+
IN
V–
R
G
V+ V
O
Ref
1 2 3 4
8 7 6 5
Top View
Supply Voltage .................................................................................. ±18V
Analog Input Voltage Range .............................................................±40V
Output Short-Circuit (to ground) .............................................. Continuous
Operating Temperature ................................................. –40°C to +125°C
Storage Temperature ..................................................... –40°C to +125°C
Junction Temperature .................................................................... +150°C
Lead Temperature (soldering, 10s)............................................... +300°C
ABSOLUTE MAXIMUM RATINGS
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