SPECIFICATIONS
At TA = +25°C, VS = ±15V, RL = 10kΩ, unless otherwise noted.
INA128P, U INA128PA, UA
INA129P, U INA129PA, UA
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
✻ Specification same as INA128P, U or INA129P, U.
NOTE: (1) Input common-mode range varies with output voltage—see typical curves. (2) Guaranteed by wafer test. (3) Temperature coefficient of the 50kΩ (or 49.4kΩ)
term in the gain equation. (4) Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%.
INPUT
Offset Voltage, RTI
Initial T
A
= +25°C ±10 ±100/G ±50 ±500/G ±25 ±100/G ±125 ±1000/G µV
vs Temperature T
A
= T
MIN
to T
MAX
±0.2 ± 2/G ±0.5 ± 20/G ±0.2 ± 5/G ±1 ± 20/G µV/°C
vs Power Supply V
S
= ±2.25V to ±18V ±0.2 ±20/G ±1 ±100/G ✻ ±2 ±200/G µV/V
Long-Term Stability ±0.1 ±3/G ✻ µV/mo
Impedance, Differential 10
10
|| 2 ✻ Ω || pF
Common-Mode 10
11
|| 9 ✻ Ω || pF
Common-Mode Voltage Range
(1)
VO = 0V (V+) – 2 (V+) – 1.4 ✻✻ V
(V–)
+ 2 (V–) + 1.7 ✻✻ V
Safe Input Voltage ±40 ✻ V
Common-Mode Rejection V
CM
= ±13V, ∆RS = 1kΩ
G=1 80 86 73 ✻ dB
G=10 100 106 93 ✻ dB
G=100 120 125 110 ✻ dB
G=1000 120 130 110 ✻ dB
BIAS CURRENT ±2 ±5 ✻ ±10 nA
vs Temperature ±30 ✻ pA/°C
Offset Current ±1 ±5 ✻ ±10 nA
vs Temperature ±30 ✻ pA/°C
NOISE VOLTAGE, RTI G = 1000, R
S
= 0Ω
f = 10Hz 10 ✻ nV/√Hz
f = 100Hz 8 ✻ nV/√Hz
f = 1kHz 8 ✻ nV/√Hz
f
B
= 0.1Hz to 10Hz 0.2 ✻ µVp-p
Noise Current
f=10Hz 0.9 ✻ pA/√Hz
f=1kHz 0.3 ✻ pA/√Hz
f
B
= 0.1Hz to 10Hz 30 ✻ pAp-p
GAIN
Gain Equation, INA128 1 + (50kΩ/R
G
) ✻ V/V
INA129
1 + (49.4kΩ/RG)
✻
V/V
Range of Gain 1 10000 ✻✻V/V
Gain Error G=1 ±0.01 ±0.024 ✻ ±0.1 %
G=10 ±0.02 ±0.4 ✻ ±0.5 %
G=100 ±0.05 ±0.5 ✻ ±0.7 %
G=1000 ±0.5 ±1 ✻ ±2%
Gain vs Temperature
(2)
G=1 ±1 ±10 ✻✻ppm/°C
50kΩ (or 49.4kΩ) Resistance
(2, 3)
±25 ±100 ✻✻ppm/°C
Nonlinearity V
O
= ±13.6V, G=1 ±0.0001 ±0.001 ✻ ±0.002 % of FSR
G=10 ±0.0003 ±0.002 ✻ ±0.004 % of FSR
G=100 ±0.0005 ±0.002 ✻ ±0.004 % of FSR
G=1000 ±0.001 (Note 4) ✻✻% of FSR
OUTPUT
Voltage: Positive R
L
= 10kΩ (V+) – 1.4 (V+) – 0.9 ✻✻ V
Negative R
L
= 10kΩ (V–) + 1.4 (V–) + 0.8 ✻✻ V
Load Capacitance Stability 1000 ✻ pF
Short-Circuit Current +6/–15 ✻ mA
FREQUENCY RESPONSE
Bandwidth, –3dB G=1 1.3 ✻ MHz
G=10 700 ✻ kHz
G=100 200 ✻ kHz
G=1000 20 ✻ kHz
Slew Rate V
O
= ±10V, G=10 4 ✻ V/µs
Settling Time, 0.01% G=1 7 ✻ µs
G=10 7 ✻ µs
G=100 9 ✻ µs
G=1000 80 ✻ µs
Overload Recovery 50% Overdrive 4 ✻ µs
POWER SUPPLY
Voltage Range ±2.25 ±15 ±18 ✻✻ ✻V
Current, Total V
IN
= 0V ±700 ±750 ✻✻µA
TEMPERATURE RANGE
Specification –40 85 ✻✻°C
Operating –40 125 ✻✻°C
θ
JA
8-Pin Dip 80 ✻ °C/W
SO-8 SOIC 150 ✻ °C/W