Burr Brown INA125UA-2K5, INA125UA, INA125U-2K5, INA125PA, INA125P Datasheet

©1997 Burr-Brown Corporation PDS-1361B Printed in U.S.A., February, 1998

®

INA125

INSTRUMENTATION AMPLIFIER

With Precision Voltage Reference

FEATURES

● LOW QUIESCENT CURRENT: 460µA

● PRECISION VOLTAGE REFERENCE:

1.24V, 2.5V, 5V or 10V

● SLEEP MODE

● LOW OFFSET VOLTAGE: 250

µV max

● LOW OFFSET DRIFT: 2

µV/°C max

● LOW INPUT BIAS CURRENT: 20nA max

● HIGH CMR: 100dB min

● LOW NOISE: 38nV/√Hz at f = 1kHz

● INPUT PROTECTION TO

±40V

● WIDE SUPPLY RANGE

Single Supply: 2.7V to 36V
Dual Supply:

±1.35V to ±18V

● 16-PIN DIP AND SO-16 SOIC PACKAGES

APPLICATIONS

● PRESSURE AND TEMPERATURE BRIDGE

AMPLIFIERS

● INDUSTRIAL PROCESS CONTROL

● FACTORY AUTOMATION

● MULTI-CHANNEL DATA ACQUISITION

● BATTERY OPERATED SYSTEMS

● GENERAL PURPOSE INSTRUMENTATION

DESCRIPTION

The INA125 is a low power, high accuracy instrumen­tation amplifier with a precision voltage reference. It
provides complete bridge excitation and precision dif­ferential-input amplification on a single integrated
circuit.

A single external resistor sets any gain from 4 to
10,000. The INA125 is laser-trimmed for low offset
voltage (250µV), low offset drift (2µV/°C), and high
common-mode rejection (100dB at G = 100). It oper­ates on single (+2.7V to +36V) or dual (±1.35V to
±18V) supplies.

The voltage reference is externally adjustable with pin­selectable voltages of 2.5V, 5V, or 10V, allowing use
with a variety of transducers. The reference voltage is
accurate to ±0.5% (max) with ±35ppm/°C drift (max).
Sleep mode allows shutdown and duty cycle operation
to save power.

The INA125 is available in 16-pin plastic DIP and
SO-16 surface-mount packages and is specified for
the –40°C to +85°C industrial temperature range.

A

1

Ref

Amp

10V

A

2

30kΩ

10kΩ

10kΩ

30kΩ

Bandgap

V

REF

13

12

1

14

15

16

4

6

9

10

11

IA

REF

5

8

7

R

G

Sense

R

R

2R

4R

INA125

V

REF

COM

V

REF

BG

V

REF

2.5

V

REF

5

V

REF

10

V

REF

Out

V

IN

V+

+

V

IN

–

2

SLEEP

3

V–

VO = (VIN – VIN) G

G = 4 + 60kΩ

+

–

R

G

VO

INA125

INA125

International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: [phone] • Twx: 910-952-1111

Internet: http://www.burr-brown.com/ • FAXLine: [phone] (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: [phone] • Immediate Product Info: [phone]

2

®

INA125

SPECIFICATIONS: VS = ±15V

At TA = +25°C, VS = ±15V, IA common = 0V, V

REF

common = 0V, and RL = 10kΩ, unless otherwise noted.

INA125P, U INA125PA, UA

The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.

PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
INPUT

Offset Voltage, RTI

Initial ±50 ±250 ✻ ±500 µV

vs Temperature ±0.25 ±2 ✻ ±5 µV/°C
vs Power Supply V

S

= ±1.35V to ±18V, G = 4 ±3 ±20 ✻ ±50 µV/V

Long-Term Stability ±0.2 ✻ µV/mo

Impedance, Differential 10

11

|| 2 ✻ Ω || pF

Common-Mode 10

11

|| 9 ✻ Ω || pF
Safe Input Voltage ±40 ✻ V
Input Voltage Range See Text ✻
Common-Mode Rejection V

CM

= –10.7V to +10.2V

G = 4 78 84 72 ✻ dB

G = 10 86 94 80 ✻ dB
G = 100 100 114 90 ✻ dB
G = 500 100 114 90 ✻ dB

BIAS CURRENT V

CM

= 0V 10 25 ✻ 50 nA

vs Temperature ±60 ✻ pA/°C

Offset Current ±0.5 ±2.5 ✻ ±5nA

vs Temperature ±0.5 ✻ pA/°C

NOISE, RTI R

S

= 0Ω

Voltage Noise, f = 10Hz 40 ✻ nV/√Hz

f = 100Hz 38 ✻ nV/√Hz
f = 1kHz 38 ✻ nV/√Hz
f

= 0.1Hz to 10Hz 0.8 ✻ µVp-p

Current Noise, f = 10Hz 170 ✻ fA/√Hz

f

= 1kHz 56 ✻ fA/√Hz

f = 0.1Hz to 10Hz 5 ✻ pAp-p

GAIN

Gain Equation

4 + 60kΩ/R

G

✻ V/V
Range of Gain 4 10,000 ✻✻V/V
Gain Error V

O

= –14V to +13.3V

G = 4 ± 0.01 ±0.075 ✻ ±0.1 %

G = 10 ±0.03 ±0.3 ✻ ±0.5 %
G = 100 ±0.05 ±0.5 ✻ ±1%
G = 500 ±0.1 ✻ %

Gain vs Temperature

G = 4 ±1 ±15 ✻✻ppm/°C

G > 4

(1)

±25 ±100 ✻✻ppm/°C

Nonlinearity V

O

= –14V to +13.3V

G = 4 ±0.0004 ±0.002 ✻ ± 0.004 % of FS

G = 10 ±0.0004 ±0.002 ✻ ± 0.004 % of FS
G = 100 ±0.001 ±0.01 ✻✻% of FS
G = 500 ±0.002 ✻ % of FS

OUTPUT

Voltage: Positive (V+)–1.7 (V+)–0.9 ✻✻ V

Negative (V–)+1 (V–)+0.4 ✻✻ V
Load Capacitance Stability 1000 ✻ pF
Short-Circuit Current –9/+12 ✻ mA

VOLTAGE REFERENCE V

REF

= +2.5V, +5V, +10V

Accuracy I

L

= 0 ±0.15 ±0.5 ✻ ±1%

vs Temperature I

L

= 0 ±18 ±35 ✻ ±100 ppm/°C

vs Power Supply, V+ V+ = (V

REF

+ 1.25V) to +36V ±20 ±50 ✻ ±100 ppm/V

vs Load I

L

= 0 to 5mA 3 75 ✻✻ppm/mA

Dropout Voltage, (V+) – V

REF

(2)

Ref Load = 2kΩ 1.25 1 ✻✻ V

Bandgap Voltage Reference 1.24 ✻ V

Accuracy I

L

= 0 ±0.5 ✻ %

vs Temperature I

L

= 0 ±18 ✻ ppm/°C

3

®

INA125

INA125P, U INA125PA, UA

PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
FREQUENCY RESPONSE

Bandwidth, –3dB G = 4 150 ✻ kHz

G = 10 45 ✻ kHz
G = 100 4.5 ✻ kHz
G = 500 0.9 ✻ kHz

Slew Rate G = 4, 10V Step 0.2 ✻ V/µs
Settling Time, 0.01% G = 4, 10V Step 60 ✻ µs

G = 10, 10V Step 83 ✻ µs
G = 100, 10V Step 375 ✻ µs
G = 500, 10V Step 1700 ✻ µs

Overload Recovery 50% Overdrive 5 ✻ µs

POWER SUPPLY

Specified Operating Voltage ±15 ✻ V
Specified Voltage Range ±1.35 ±18 ✻✻V
Quiescent Current, Positive I

O

= I

REF

= 0mA 460 525 ✻✻ µA

Negative I

O

= I

REF

= 0mA –280 –325 ✻✻ µA

Reference Ground Current

(3)

180 ✻ µA

Sleep Current (V

SLEEP

≤ 100mV) RL = 10kΩ, Ref Load = 2kΩ±1±25 ✻✻ µA

SLEEP MODE PIN

(4)

VIH (Logic high input voltage) +2.7 V+ ✻✻V
V

IL

(Logic low input voltage) 0 +0.1 ✻✻V

I

IH

(Logic high input current) 15 ✻ µA

I

IL

(Logic low input current) 0 ✻ µA

Wake-up Time

(5)

150 ✻ µs

TEMPERATURE RANGE

Specification Range –40 +85 ✻✻°C
Operation Range –55 +125 ✻✻°C
Storage Range –55 +125 ✻✻°C
Thermal Resistance,

θ

JA

16-Pin DIP 80 ✻ °C/W
SO-16 Surface-Mount 100 ✻ °C/W

✻ Specification same as INA125P, U.
NOTES: (1) Temperature coefficient of the "Internal Resistor" in the gain equation. Does not include TCR of gain-setting resistor, R

G

. (2) Dropout voltage is the

positive supply voltage minus the reference voltage that produces a 1% decrease in reference voltage. (3) V

REF

COM pin. (4) Voltage measured with respect to

Reference Common. Logic low input selects Sleep mode. (5) IA and Reference, see Typical Performance Curves.

SPECIFICATIONS: VS = ±15V (CONT)

At TA = +25°C, VS = ±15V, IA common = 0V, V

REF

common = 0V, and RL = 10kΩ, unless otherwise noted.

INA125P, U INA125PA, UA

PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
INPUT

Offset Voltage, RTI

Initial ±75 ±500 ✻ ±750 µV

vs Temperature ±0.25 ✻ µV/°C
vs Power Supply V

S

= +2.7V to +36V 3 20 ✻ 50 µV/V
Input Voltage Range See Text ✻
Common-Mode Rejection V

CM

= +1.1V to +3.6V

G = 4 78 84 72 ✻ dB

G = 10 86 94 80 ✻ dB
G = 100 100 114 90 ✻ dB
G = 500 100 114 90 ✻ dB

GAIN

Gain Error V

O

= +0.3V to +3.8V

G = 4 ± 0.01 ✻ %

OUTPUT

Voltage, Positive (V+)–1.2 (V+)–0.8 ✻✻ V

Negative (V–)+0.3 (V–)+0.15 ✻✻ V

POWER SUPPLY

Specified Operating Voltage +5 ✻ V
Operating Voltage Range +2.7 +36 ✻✻V
Quiescent Current I

O

= I

REF

= 0mA 460 525 ✻✻ µA

Sleep Current (V

SLEEP

≤ 100mV) RL = 10kΩ, Ref Load = 2kΩ±1±25 ✻✻ µA

✻ Specification same as INA125P, U.

SPECIFICATIONS: VS = +5V

At TA = +25°C, VS = +5V, IA common at VS/2, V

REF

common = VS/2, VCM = VS/2, and RL = 10kΩ to VS/2, unless otherwise noted.

4

®

INA125

PIN CONFIGURATION

Top View 16-Pin DIP, SO-16

Power Supply Voltage, V+ to V– ........................................................36V

Input Signal Voltage .......................................................................... ±40V

Output Short Circuit ................................................................. Continuous

Operating Temperature ................................................. –55°C to +125°C

Storage Temperature ..................................................... –55° C to +125°C

Lead Temperature (soldering, 10s)............................................... +300°C

NOTE: Stresses above these ratings may cause permanent damage.

ABSOLUTE MAXIMUM RATINGS

(1)

V+

SLEEP

V–

V

REF

OUT

IA

REF

V

IN

V

IN

R

G

V

REF

10

V

REF

5

V

REF

2.5

V

REF

BG

V

REF

COM
Sense
V

O

R

G

1
2
3
4
5
6
7
8

16
15
14
13
12
11
10

9

–

+

ELECTROSTATIC
DISCHARGE SENSITIVITY

This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with ap­propriate precautions. Failure to observe proper handling and
installation procedures can cause damage.

ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.

PACKAGE INFORMATION

PACKAGE DRAWING

PRODUCT PACKAGE NUMBER

(1)

INA125PA 16-Pin Plastic DIP 180
INA125P 16-Pin Plastic DIP 180

INA125UA SO-16 Surface-Mount 265
INA125U SO-16 Surface-Mount 265

NOTES: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.