Burr Brown INA110KU, INA110KP, INA110AG, INA110SG, INA110KU-1K Datasheet

INA110

Fast-Settling FET-Input

INSTRUMENTATION AMPLIFIER

APPLICATIONS

● MULTIPLEXED INPUT DATA

ACQUISITION SYSTEM

● FAST DIFFERENTIAL PULSE AMPLIFIER

● HIGH SPEED GAIN BLOCK

● AMPLIFICATION OF HIGH IMPEDANCE

SOURCES

DESCRIPTION

The INA110 is a versatile monolithic FET-input instrumentation amplifier. Its current-feedback circuit topology and laser trimmed input stage provide excellent dynamic performance and accuracy. The INA110 settles in 4µs to 0.01%, making it ideal for high speed or multiplexed-input data acquisition systems.

Internal gain-set resistors are provided for gains of 1, 10, 100, 200, and 500V/V. Inputs are protected for differential and common-mode voltages up to ±V

. Its very high input impedance and low input bias current make the INA110 ideal for applications requiring input filters or input protection circuitry.

The INA110 is available in 16-pin plastic and ceramic DIPs, and in the SOL-16 surface-mount package. Military, industrial and commercial temperature range grades are available.

404Ω

4.44kΩ

201Ω

80.2Ω

20kΩ

10kΩ

20kΩ

10kΩ

4 5 8 7 14 15

–In

X 10

X 100

X 200

X 500

+In

(1)

Output

Ref

Sense

–V

Input Offset Adjust

Output

Offset

Adjust

FET

Input

FET

Input

INA110

NOTE: (1) Connect to R

for desired gain.

International Airport Industrial Park • Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706

Tel: (520) 746-1111 • Twx: 910-952-1111 • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132

FEATURES

● LOW BIAS CURRENT: 50pA max

● FAST SETTLING: 4

µs to 0.01%

● HIGH CMR: 106dB min; 90dB at 10kHz

● INTERNAL GAINS: 1, 10, 100, 200, 500

● VERY LOW GAIN DRIFT: 10 to 50ppm/

°C

● LOW OFFSET DRIFT: 2

µV/°C

● LOW COST

● PINOUT SIMILAR TO AD524 AND AD624

1986 Burr-Brown Corporation PDS-645E Printed in U.S.A. September, 1993

INA110

SPECIFICATIONS

ELECTRICAL

At +25°C, ±VCC = 15VDC, and RL = 2kΩ, unless otherwise specified.

INA110BG, SG INA110KP, KUINA110AG

G = 1 + [40k/(RG + 50Ω)]

PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS GAIN

Range of Gain 1 800 * * * * V/V Gain Equation

(1)

* * V/V

Gain Error, DC: G = 1 0.002 0.04 * 0.02 * * %

G = 10 0.01 0.1 0.005 0.05 * * % G = 100 0.02 0.2 0.01 0.1 * * % G = 200 0.04 0.4 0.02 0.2 * * % G = 500 0.1 1 0.05 0.5 * * %

Gain Temp. Coefficient: G = 1 ±3 ±20 * ±10 * ppm/°C

G = 10 ±4 ±20 ±2 ±10 * ppm/°C G = 100 ±6 ±40 ±3 ±20 * ppm/°C G = 200 ±10 ±60 ±5 ±30 * ppm/°C G = 500 ±25 ±100 ±10 ±50 * ppm/°C

Nonlinearity, DC: G = 1 ±0.001 ±0.01 ±0.0005 ±0.005 * * % of FS

G = 10 ±0.002 ±0.01 ±0.001 ±0.005 * * % of FS G = 100 ±0.004 ±0.02 ±0.002 ±0.01 * * % of FS G = 200 ±0.006 ±0.02 ±0.003 ±0.01 * * % of FS G = 500 ±0.01 ±0.04 ±0.005 ±0.02 * * % of FS

OUTPUT

Voltage, R

= 2kΩ Over Temperature ±10 ±12.7 * * * * V Current Over Temperature ±5 ±25 * * * * mA Short-Circuit Current ±25 * * mA Capacitive Load Stability 5000 * * pF

INPUT OFFSET VOLTAGE

(2)

Initial Offset: G, P ±(100 + ±(500 + ±(50 + ±(250 + * * µV

1000/G) 5000/G) 600/G) 3000/G)

U ±(200 + ±(1000 + µV

2000/G) 5000/G)

vs Temperature ±(2 + ±(5 + ±(1 + ±(2 + * µV/°C

20/G) 100/G) 10/G) 50/G)

vs Supply V

= ±6V to ±18V ±(4 + ±(30 + ±(2 + ±(10 + * * µV/V

60/G) 300/G) 30/G) 180/G)

BIAS CURRENT

Initial Bias Current Each Input 20 100 10 50 * * pA Initial Offset Current 2 50 1 25 * * pA Impedance: Differential 5x10

||6 * * Ω || pF

Common-Mode 2x10

||1 * * Ω || pF

VOLTAGE RANGE V

Diff. = 0V

(3)

Range, Linear Response ±10 ±12 * * V CMR with 1kΩ Source Imbalance: G = 1 DC 70 90 80 100 * * dB G = 10 DC 87 104 96 112 * * dB G = 100 DC 100 110 106 116 * * dB G = 200 DC 100 110 106 116 * * dB G = 500 DC 100 110 106 116 * * dB

INPUT NOISE

(4)

Voltage, fO = 10kHz 10 * * nV/√Hz

= 0.1Hz to 10Hz 1 * * µVp-p

Current, f

= 10kHz 1.8 * * fA/√Hz

OUTPUT NOISE

(4)

Voltage, fO = 10kHz 65 * * nV/√Hz

= 0.1Hz to 10Hz 8 * * µVp-p

DYNAMIC RESPONSE

Small Signal: G = 1 –3dB 2.5 * * MHz

G = 10 2.5 * * MHz G = 100 470 * * kHz G = 200 240 * * kHz G = 500 100 * * kHz

Full Power V

OUT

= ±10V,

G = 2 to 100 190 270 * * * * kHz Slew Rate G = 2 to 100 12 17 * * * * V/µs Settling Time:

0.1%, G = 1 V

= 20V Step 4 * * µs G = 10 2 * * µs G = 100 3 * * µs G = 200 5 * * µs G = 500 11 * * µs

INA110

PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS DYNAMIC RESPONSE (CONT)

Settling Time:

0.01%,G = 1 V

= 20V Step 5 12.5 * * * µs G = 10 3 7.5 * * * µs G = 100 4 7.5 * * * µs G = 200 7 12.5 * * * µs G = 500 16 25 * * * µs

Recovery

(5)

50% Overdrive 1 * * µs

POWER SUPPLY

Rated Voltage ±15 * * V Voltage Range ±6 ±18 * * * * V Quiescent Current V

= 0V ±3 ±4.5 ** **mA

TEMPERATURE RANGE

Specification: A, B, K –25 +85 * * 0 +70 °C S –55 +125 °C Operation –55 +125 * * –25 +85 °C Storage –65 +150 * * –40 +85 °C

100 * * °C/W

SPECIFICATIONS (CONT)

ELECTRICAL

At +25°C, ±VCC 15VDC, and RL = 2KΩ, unless otherwise specified.

INA110BG, SG INA110KP, KUINA110AG

* Same as INA110AG. NOTES: (1) Gains other than 1, 10, 100, 200, and 500 can be set by adding an external resistor, R

, between pin 3 and pins 11, 12 and 16. Gain accuracy is a function

of R

and the internal resistors which have a ±20% tolerance with 20ppm/°C drift. (2) Adjustable to zero. (3) For differential input voltage other than zero, see Typical

Performance Curves. (4) V

NOISE RTI

= √V

INPUT

+ (V

N OUTPUT

/Gain)2. (5) Time required for output to return from saturation to linear operation following the removal of

an input overdrive voltage.

ABSOLUTE MAXIMUM RATINGS

Supply Voltage.................................................................................. ±18V

Input Voltage Range .......................................................................... ±V

Operating Temperature Range: G ................................. –55°C to +125°C

P, U............................... –25°C to +85°C

Storage Temperature Range: G .................................... –65°C to +150°C

P, U.................................. –40°C to +85°C

Lead Temperature (soldering, 10s): G, P ..................................... +300°C

(soldering, 3s): U ........................................... +260°C

Output Short Circuit Duration ............................... Continuous to Common

PACKAGE INFORMATION

PACKAGE DRAWING

MODEL PACKAGE NUMBER

(1)

INA110AG 16-Pin Ceramic DIP 109 INA110BG 16-Pin Ceramic DIP 109 INA110SG 16-Pin Ceramic DIP 109 INA110KP 16-Pin Plastic DIP 180 INA110KU SOL-16 SOIC 211

NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix D of Burr-Brown IC Data Book.

Top View DIP/SOIC

PIN CONFIGURATION

ORDERING INFORMATION

MODEL PACKAGE TEMPERATURE RANGE

INA110AG 16-Pin Ceramic DIP –25°C to +85°C INA110BG 16-Pin Ceramic DIP –25°C to +85°C INA110SG 16-Pin Ceramic DIP –55°C to +125°C INA110KP 16-Pin Plastic DIP 0°C to +70°C INA110KU SOL-16 SOIC 0°C to +70°C

The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems.

–In +In

 Input Offset Adj. Input Offset Adj.

Reference

–V



x200 Output Offset Adj. Output Offset Adj. x10 x100 x500 Output Sense Output

1 2 3 4 5 6 7 8

16 15 14 13 12 11 10

INA110

Load Resistance (Ω)

OUTPUT SWING vs LOAD RESISTANCE

Output Voltage (V)

±16

±12

±8

±4

400 1.6k02M800 1.2k

±4

Power Supply Voltage (V)

OUTPUT SWING vs SUPPLY

Output Voltage (V)

±16

±13

±10

±7

RL = 2kΩ

±9 ±15±6 ±18±12

±3

Power Supply Voltage (V)

INPUT VOLTAGE RANGE vs SUPPLY

Input Voltage Range (V)

±9 ±15±6 ±18

±15

±12

±9

±6

±12

Power Supply Voltage (V)

BIAS CURRENT vs SUPPLY

Input Bias Current (pA)

±9 ±15±6 ±18

25

20

15

10

±12

DICE INFORMATION

PAD FUNCTION

1 –In 2 +In

3A,3B R

(connect both) 4 Input Offset Adjust 5 Input Offset Adjust 6 Reference 7–V

8+V

9 Output

10 Output Sense 11 x500 12 x100 13 x10 14 Output Offset Adjust 15 Output Offset Adjust 16 x200

Pads 3A and 3B must be connected. Substrate Bias: Internally connected to –V

power sup-

ply.

MECHANICAL INFORMATION

MILS (0.001") MILLIMETERS

Die Size 139 x 89 ±5 3.53 x 2.26 ±0.13 Die Thickness 20 ±3 0.51 ±0.08 Min. Pad Size 4 x 4 0.10 x 0.10

Backing Gold

TYPICAL PERFORMANCE CURVES

At TA = +25°C, and ±VCC = 15VDC, unless otherwise noted.

INA110 DIE TOPOGRAPHY

15 14 13 12 11

8 7

+ 7 hidden pages

Burr Brown INA110KU, INA110KP, INA110AG, INA110SG, INA110KU-1K Datasheet

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