BURR-BROWN BUF602 User Manual

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Self-Referenced, AC-Coupled, Single-Supply Buffer

Ω

OUT

≈2kΩ

Input Z

ZO< 2Ωto 20MHz

VCC/2

1µF

200

Ω

High-Speed, Closed-Loop Buffer

FEATURES DESCRIPTION

• Wide Bandwidth: 1000MHz

• High Slew Rate: 8000V/ µ s

• Flexible Supply Range: ± 1.4V to ± 6.3V Dual Supplies

+2.8V to +12.6V Single Supply

• Output Current: 60mA (continuous)

• Peak Output Current: 350mA

• Low Quiescent Current: 5.8mA

• Standard Buffer Pinout

• Optional Mid-Supply Reference Buffer

APPLICATIONS

• Low Impedance Reference Buffers

• Clock Distribution Circuits

• Video/Broadcast Equipment

• Communications Equipment

• High-Speed Data Acquisition

• Test Equipment and Instrumentation

BUF602

SBOS339 – OCTOBER 2005

The BUF602 is a closed-loop buffer recommended for a wide range of applications. Its wide bandwidth (1000MHz) and high slew rate (8000V/ µ s) make it ideal for buffering very high-frequency signals. For AC-coupled applications, an optional mid-point reference (V external components required and the necessary supply current to provide that reference.

The BUF602 is available in a standard SO-8 surface-mount package and in an SOT23-5 where a smaller footprint is needed.

) is provided, reducing the number of

REF

All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

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Top View

Out

−V

REF

AWO

PinOrientation/Package Marking

SOT23−5

200Ω

50kΩ

Out

REF

−V

SO−8

NC= NoConnection

200Ω

50kΩ

BUF602

SBOS339 – OCTOBER 2005

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

ORDERING INFORMATION

(1)

SPECIFIED

PACKAGE TEMPERATURE PACKAGE ORDERING TRANSPORT MEDIA,

PRODUCT PACKAGE DESIGNATOR RANGE MARKING NUMBER QUANTITY

BUF602 SO-8 D –45 ° C to +85 ° C BUF602

BUF602 SOT23-5 DBV –45 ° C to +85 ° C AWO

BUF602ID Rails, 75

BUF602IDR Tape and Reel, 2500

BUF602IDBVT Tape and Reel, 250

BUF602IDBVR Tape and Reel, 3000

(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document or see the TI

web site at www.ti.com .

ABSOLUTE MAXIMUM RATINGS

(1)

Power Supply ± 6.5V Internal Power Dissipation See Thermal Information Input Common-Mode Voltage Range ± V Storage Temperature Range: D, DBV –40 ° C to +125 ° C Lead Temperature (soldering, 10s) +300 ° C Junction Temperature (TJ) +150 ° C ESD Rating:

Human Body Model (HBM) 2000V Charge Device Model (CDM) 1000V Machine Model (MM) 200V

(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not supported.

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SBOS339 – OCTOBER 2005

BUF602

ELECTRICAL CHARACTERISTICS: V

= ± 5V

Boldface limits are tested at +25 ° C.

At RL= 100 Ω , unless otherwise noted.

BUF602ID, IDBV

TYP MIN/MAX OVER TEMPERATURE

0 ° C to –40 ° C to MIN/

PARAMETER CONDITIONS +25 ° C +25 ° C AC PERFORMANCE (See figure 30)

Bandwidth VO= 500mV

Full Power Bandwidth VO= 5V Bandwidth for 0.1dB Flatness VO= 500mV Slew Rate VO= 5V Step 8000 7000 6000 5000 V/ µ s min B Rise Time and Fall Time VO= 0.2V Step 350 625 640 650 ps max B Settling Time to 0.05% VO= 1V Step 6 ns typ C Harmonic Distortion VO= 2V

2nd-Harmonic RL= 100 Ω –57 –44 –44 –42 dBc max B

3rd-Harmonic RL= 100 Ω –68 –63 –63 –63 dBc max B

Input Voltage Noise f > 100kHz 4.8 5.1 5.6 6.0 nV/ √ Hz max B Input Current Noise f > 100kHz 2.1 2.6 2.7 2.8 pA/ √ Hz max B Differential Gain NTSC, RL= 150 Ω to 0V 0.15 % typ C Differential Phase NTSC, RL= 150 Ω to 0V 0.04 ° typ C

BUFFER DC PERFORMANCE

Maximum Gain RL= 500 Ω 0.99 1 1 1 V/V max A Minimum Gain RL= 500 Ω 0.99 0.98 0.98 0.98 V/V min A Input Offset Voltage ± 16 ± 30 ± 36 ± 38 mV max A

Average Input Offset Voltage Drift ± 125 ± 125 µ V/ ° C max B

Input Bias Current ± 3 ± 7 ± 8 ± 8.5 µ A max A

Average Input Bias Current Drift ± 20 ± 20 nA/ ° C max B

BUFFER INPUT

Input Impedance 1.0 || 2.1 M Ω || pF typ C

BUFFER OUTPUT

Output Voltage Swing RL= 100 Ω ± 3.8 ± 3.7 ± 3.7 ± 3.7 V min B

Output Current (Continuous) VO= 0V ± 60 ± 50 ± 49 ± 48 mA min A Peak Output Current VO= 0V ± 350 mA typ C Closed-Loop Output Impedance f ≤ 10MHz 1.4 Ω typ C

POWER SUPPLY

Specified Operating Voltage ± 5 V typ C Maximum Operating Voltage ± 6.3 ± 6.3 ± 6.3 V max A Minimum Operating Voltage ± 1.4 ± 1.4 ± 1.4 V min B Maximum Quiescent Current VS= ± 5V 5.8 6.3 6.9 7.2 mA max A Minimum Quiescent Current VS= ± 5V 5.8 5.3 4.9 4.3 mA min A Power-Supply Rejection Ratio (+PSRR) 54 48 46 45 dB min A

(4)

VO= 1V

, 5MHz

RL= 500 Ω –76 –63 –62 –60 dBc max B

RL= 500 Ω –98 –85 –84 –82 dBc max B

RL= 500 Ω ± 4.0 ± 3.8 ± 3.8 ± 3.8 V min A

1000 560 550 540 MHz min B

920 MHz typ C 880 MHz typ C 240 MHz typ C

(2)

(1) Test levels: (A) 100% tested at 25 ° C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization

and simulation. ©) Typical value only for information.

(2) Junction temperature = ambient for 25 ° C specifications. (3) Junction temperature = ambient at low temperature limit; junction temperature = ambient + 8 ° C at high temperature limit for over

temperature specifications.

(4) Current is considered positive out of node.

(3)

70 ° C

+85 ° C

(3)

UNITS MAX TEST LEVEL

(1)

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BUF602

SBOS339 – OCTOBER 2005

ELECTRICAL CHARACTERISTICS: V

= ± 5V (continued)

Boldface limits are tested at +25 ° C.

At RL= 100 Ω , unless otherwise noted.

BUF602ID, IDBV

TYP MIN/MAX OVER TEMPERATURE

0 ° C to –40 ° C to MIN/

PARAMETER CONDITIONS +25 ° C +25 ° C THERMAL CHARACTERISTICS

Specification: ID –40 to +85 ° C typ C Thermal Resistance θ D SO-8 Junction-to-Ambient 125 ° C/W typ C DBV SOT23-5 Junction-to-Ambient 150 ° C/W typ C

(2)

(3)

70 ° C

+85 ° C

(3)

UNITS MAX TEST LEVEL

(1)

www.ti.com

SBOS339 – OCTOBER 2005

BUF602

ELECTRICAL CHARACTERISTICS: V

= +5V

Boldface limits are tested at +25 ° C.

At RL= 100 Ω to VS/2, unless otherwise noted.

BUF602ID, IDBV

TYP MIN/MAX OVER TEMPERATURE

0 ° C to –40 ° C to MIN/

PARAMETER CONDITIONS +25 ° C +25 ° C AC PERFORMANCE (See figure 31)

Bandwidth VO= 500mV

Full-Power Bandwidth VO= 3V Bandwidth for 0.1dB Flatness VO= 500mV Slew Rate VO= 3V Step 2500 1800 1600 1400 V/ µ s min B Rise Time and Fall Time VO= 0.2V Step 450 875 875 900 ps max B Settling Time to 0.05% VO= 1V Step 6 ns typ C Harmonic Distortion VO= 2V

2nd-Harmonic RL= 100 Ω –50 –45 –44 –43 dBc max B

3rd-Harmonic RL= 100 Ω –70 –64 –64 –63 dBc max B

Input Voltage Noise f > 100kHz 4.9 5.2 5.7 6.1 nV/ √ Hz max B Input Current Noise f > 100kHz 2.2 2.7 2.8 2.9 pA/ √ Hz max B Differential Gain NTSC, RL= 100 Ω to VS/2 0.16 % typ C Differential Phase NTSC, RL= 100 Ω to VS/2 0.05 ° typ C

BUFFER DC PERFORMANCE

Maximum Gain RL= 500 Ω 0.99 1 1 1 V/V max A Minimum Gain RL= 500 Ω 0.99 0.98 0.98 0.98 V/V min A Input Offset Voltage ± 16 ± 30 ± 36 ± 38 mV max A

Average Input Offset Voltage Drift ± 125 ± 125 µ V/ ° C max B

Input Bias Current ± 3 ± 7 ± 8 ± 8.5 µ A max A

Average Input Bias Current Drift ± 20 ± 20 nA/ ° C max B

BUFFER INPUT

Input Impedance 1.0 || 2.1 M Ω || pF typ C

BUFFER OUTPUT

Most Positive Output Voltage RL= 100 Ω +3.9 +3.7 +3.7 +3.7 V min B

Least Positive Output Voltage RL= 100 Ω +1.1 +1.3 +1.3 +1.3 V max B

Output Current (Continuous) VO= 0V ± 60 ± 50 ± 49 ± 48 mA min A Peak Output Current VO= 0V ± 160 mA typ C Closed-Loop Output Impedance f ≤ 10MHz 1.4 Ω typ C

MID-POINT REFERENCE OUTPUT

Maximum Mid Supply Reference Voltage 2.5 2.6 2.6 2.6 V max A Minimum Mid Supply Reference Voltage 2.5 2.4 2.4 2.4 V min A Mid-Supply Output Current, Sourcing 800 µ A typ C Mid-Supply Output Current, Sinking 70 µ A typ C Mid-Supply Output Impedance 200 Ω typ C

(4)

VO= 1V

, 5MHz

RL= 500 Ω –73 –62 –61 –60 dBc max B

RL= 500 Ω –73 –72 –72 –71 dBc max B

RL= 500 Ω +4.1 +3.8 +3.8 +3.8 V min A

RL= 500 Ω +0.9 +1.2 +1.2 +1.2 V max A

780 400 400 390 MHz min B 700 MHz typ C 420 MHz typ C 130 MHz typ C

(2)

(1) Test levels: (A) 100% tested at 25 ° C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization

and simulation. ©) Typical value only for information.

(2) Junction temperature = ambient for 25 ° C specifications. (3) Junction temperature = ambient at low temperature limit; junction temperature = ambient + 4 ° C at high temperature limit for over

temperature specifications.

(4) Current is considered positive out of node.

(3)

70 ° C

+85 ° C

(3)

UNITS MAX TEST LEVEL

(1)

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BUF602

SBOS339 – OCTOBER 2005

ELECTRICAL CHARACTERISTICS: V

= +5V (continued)

Boldface limits are tested at +25 ° C.

At RL= 100 Ω to VS/2, unless otherwise noted.

BUF602ID, IDBV

TYP MIN/MAX OVER TEMPERATURE

0 ° C to –40 ° C to MIN/

PARAMETER CONDITIONS +25 ° C +25 ° C POWER SUPPLY

Specified Operating Voltage +5 V typ C Maximum Operating Voltage +12.6 +12.6 +12.6 V max A Minimum Operating Voltage +2.8 +2.8 +2.8 V min B Maximum Quiescent Current VS= +5V 5.3 5.8 6.3 6.5 mA max A Minimum Quiescent Current VS= +5V 5.3 4.8 4.5 3.9 mA min A Power-Supply Rejection Ratio (+PSRR) 52 46 44 43 dB min A

THERMAL CHARACTERISTICS

Specification: ID –40 to +85 ° C typ C Thermal Resistance θ D SO-8 Junction-to-Ambient 125 ° C/W typ C DBV SOT23-5 Junction-to-Ambient 150 ° C/W typ C

(2)

(3)

70 ° C

+85 ° C

(3)

UNITS MAX TEST LEVEL

(1)

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SBOS339 – OCTOBER 2005

BUF602

ELECTRICAL CHARACTERISTICS: V

= +3.3V

Boldface limits are tested at +25 ° C.

At RL= 100 Ω , unless otherwise noted.

BUF602ID, IDBV

TYP MIN/MAX OVER TEMPERATURE

0 ° C to –40 ° C to MIN/

PARAMETER CONDITIONS +25 ° C +25 ° C AC PERFORMANCE

Bandwidth VO= 500mV Full Power Bandwidth VO= 1V Bandwidth for 0.1dB Flatness VO= 500mV Slew Rate VO= 1.4V Step 800 650 600 600 V/ µ s min B Rise Time and Fall Time VO= 0.2V Step 580 1100 1100 1150 ps max B Settling Time to 0.05% VO= 1V Step 6.5 ns typ C Harmonic Distortion VO= 1V

2nd-Harmonic RL= 100 Ω –59 –49 –49 –48 dBc max B

3rd-Harmonic RL= 100 Ω –70 –51 –48 –44 dBc max B

Input Voltage Noise f > 100kHz 4.9 5.2 5.7 6.1 nV/ √ Hz max B Input Current Noise f > 100kHz 2.2 2.7 2.8 2.9 pA/ √ Hz max B

BUFFER DC PERFORMANCE

Maximum Gain RL= 500 Ω 0.99 1 1 1 V/V max A Minimum Gain RL= 500 Ω 0.99 0.98 0.98 0.98 V/V min A Input Offset Voltage ± 16 ± 30 ± 36 ± 38 mV max A

Average Input Offset Voltage Drift ± 125 ± 125 µ V/ ° C max B

Input Bias Current ± 3 ± 7 ± 8 ± 8.5 µ A max A

Average Input Bias Current Drift ± 20 ± 20 nA/ ° C max B

BUFFER INPUT

Input Impedance 1.0 || 2.1 M Ω || pF typ C

BUFFER OUTPUT

Most Positive Output Voltage RL= 100 Ω +2.1 +2.0 +2.0 +2.0 V min B

Least Positive Output Voltage RL= 100 Ω +1.2 +1.3 +1.3 +1.3 V max B

Output Current (Continuous) VO= 0 ± 60 ± 50 ± 49 ± 48 mA min A Peak Output Current ± 100 mA typ C Closed-Loop Output Impedance f ≤ 10MHz 1.4 Ω typ C

MID-POINT REFERENCE OUTPUT

Maximum Mid Supply Reference Voltage 1.65 1.72 1.72 1.72 V max A Minimum Mid Supply Reference Voltage 1.65 1.58 1.58 1.58 V min A Mid Supply Output Current, Sourcing 500 µ A typ C Mid Supply Output Current, Sinking 60 µ A typ C Mid Supply Output Impedance 200 Ω typ C

POWER SUPPLY

Specified Operating Voltage +3.3 V typ C Maximum Operating Voltage +12.6 +12.6 +12.6 V max A Minimum Operating Voltage +2.8 +2.8 +2.8 V min B Maximum Quiescent Current VS= +3.3V 5.0 5.5 6.0 6.3 mA max A Minimum Quiescent Current VS= +3.3V 5.0 4.5 4.2 3.8 mA min A Power-Supply Rejection Ratio (+PSRR) 50 44 42 41 dB min A

(4)

, 5MHz

RL= 500 Ω –76 –61 –57 –53 dBc max B

RL= 500 Ω –63 –51 –48 –44 dBc max B

RL= 500 Ω +2.3 +2.2 +2.2 +2.2 V min A

RL= 500 Ω +1.0 +1.1 +1.1 +1.1 V max A

600 320 320 310 MHz min B 520 MHz typ C 110 MHz typ C

(2)

(1) Test levels: (A) 100% tested at 25 ° C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization

(2) Junction temperature = ambient for 25 ° C specifications. (3) Junction temperature = ambient at low temperature limit; junction temperature = ambient + 2 ° C at high temperature limit for over

temperature specifications.

(4) Current is considered positive out of node.

(3)

70 ° C

+85 ° C

(3)

UNITS MAX TEST LEVEL

(1)

+ 15 hidden pages

BURR-BROWN BUF602 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual

FEATURES DESCRIPTION

APPLICATIONS

ABSOLUTE MAXIMUM RATINGS