Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
Programmable Voltage Source
with Memory
BUF01900
BUF01901
FEATURES
D10-BIT RESOLUTION
DRAIL-TO-RAIL OUTPUT
DONBOARD NONVOLATILE MEMORY
DI
OUT
: 100mA
DLOW SUPPLY CURRENT: 900µA
DSUPPLY VOLTAGE: 7V to 18V
DDIGITAL SUPPLY: 2.0V to 5.5V
DINDUSTRY-STANDARD, TWO-WIRE
INTERFACE
DHIGH ESD RATING:
2kV HBM, 500V CDM
APPLICATIONS
DLCD PANEL V
DLCD PANEL BRIGHTNESS AND CONTRAST
CONTROL
DPOTENTIOMETER REPLACEMENT
DMOTOR DRIVE
DPROGRAMMABLE POWER SUPPLY
DPROGRAMMABLE OFFSET ADJUSTMENT
DACTUATOR CONTROL
CALIBRATION
COM
DESCRIPTION
The BUF01900 and BUF01901 provide a programmable
voltage output with 10-bit resolution. Programming of the
output occurs through an industry-standard, two-wire
serial interface. Once the correct V
established it can easily be stored into the integrated
nonvolatile memory.
An initial output voltage and adjustment range can be set
by an external resistor-divider. With its large output current
capability (up to 100mA), the BUF01900 and BUF01901
are ideally suited as programmable V
LCD panels.
The BUF01901 has the digital-to-analog converter (DAC)
output brought out directly . It has a slightly lower cost than
the BUF01900, and works very well with the integrated
V
in traditional gamma buffers such as the BUFxx702,
COM
BUFxx703, BUFxx704 and BUF11705.
The BUF01900 and BUF01901 are both available in
TSSOP-8 and 3mm x 3mm DFN-10 packages. The
DFN-10 package (only 0.9mm in height) is especially
well-suited for notebook computers. Both devices are
specified from −40°C to +85°C.
Digital
2V to 5.5V
BUF01900
Voltage
Regulator
Analog
7V to 18V
voltage is
COM
calibrators in
COM
BIAS
250k
4xOTP
ROM
BUF01900, BUF01901 RELATED PRODUCTS
FEATURESPRODUCT
22V High Supply V oltage Gamma BuffersBUF11705
12--Channel Programmable Buffer, 10-Bit, V
20-Channel Programmable Buffer, 10-Bit, V
16-Channel Programmable Buffer with MemoryBUF16820
20-Channel Programmable Buffer with MemoryBUF20820
semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a registered trademark of Texas Instruments. All other trademarks are the property of their respective owners.
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate
precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is
not supported.
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site
at www .ti.com.
PIN CONFIGURATIONS
BUF01900
1
V
S
2
V
COM
3
BIAS
4
GND
5
DGND
V
1
S
V
2
COM
3
BIAS
4
GND
2
Exposed
Thermal
Die Pad
on
Underside
DFN−10
BUF01900
TSSOP−8
BUF01901
SDA
10
9
SCL
8
A0
7
A1
6
V
SD
8
SDA
7
SCL
6
A0
V
5
SD
NC
BIAS
GND
DGND
V
S
NC
BIAS
GND
1
2
3
4
5
V
S
Exposed
Thermal
Die Pad
on
Underside
DFN−10
BUF01901
1
2
3
4
TSSOP−8
SDA
10
SCL
9
A0
8
A1
7
V
6
SD
SDA
8
SCL
7
6
A0
5
V
SD
NC = No connection
"#$%&$$
"#$%&$%
www.ti.com
SBOS337A − OCTOBER 2006 − REVISED OCTOBER 2006
ELECTRICAL CHARACTERISTICS
Boldface limits apply over the specified temperature range, TA = −40°C to +85°C.
At TA = +25°C, VS = 18V, VSD = 5V, RL = 1.5kΩ connected to ground, and CL = 200pF, unless otherwise noted.
PARAMETERCONDITIONSMINTYPMAXUNIT
ANALOG
V
Output Swing
COM
(1)
Sourcing 10mA, Code 102317.717.8V
Sinking 10mA, Code 000.61V
Sourcing 100mA, Code 10231516V
Sinking 100mA, Code 000.751V
V
Output Reset and Power-Up Value
COM
Nominal V
Program to Out Delayt
Output ImpedanceNo Load on V
BIAS
(1)
D
OTP not programmed, Code 512VS/2V
Output Accuracy1V < V
Load RegulationREGV
(1)
V
COM
OUT
= VS/2, I
Offset±5±25mV
Offset Drift−25°C to +100°C5µV/°C
Common-Mode Range0.8 to 18V
Common-Mode RejectionCMR0.8V < VIN < 17.9V85dB
Slew Rate5V/µs
V
BIAS
Integral NonlinearityINL0.12LSB
Differential NonlinearityDNL0.12LSB
Gain Error0.11%FSC
Accuracy2050mV
Specified Temperature Range−40+85°C
Operating Temperature RangeJunction Temperature < 125°C−40+95°C
Storage Temperature Range−65+150°C
Thermal Resistanceq
JA
TSSOP-8150°C/W
DFN-1047°C/W
(1)
BUF01900 only.
(2)
Minimum analog supply voltage is 8.5V when programming OTP memory.
BUF01900, BUF01901
BIAS
, V
COM
250kΩ
5µs
< 17.72050mV
COM
= +50mA to −50mA Step0.51.5mV/mA
OUT
No Load on V
BIAS
718V
0.7 × V
SD
I
= 3mA0.150.4V
SINK
0.3 × V
SD
High-Speed Mode3.4MHz
2.05.5V
2550µA
V
V
3
"#$%&$$
"#$%&$%
SBOS337A − OCTOBER 2006 − REVISED OCTOBER 2006
TYPICAL CHARACTERISTICS
At TA = +25°C, VS = 18V , VSD = 5V , RL = 1.5kΩ connected to ground, and CL = 200pF, unless otherwise noted.
www.ti.com
1.5
1.0
0.5
Analog Supply Current (mA)
(mV)
OS
V
−10
−15
−20
−
ANALOG SUPPLY CURRENT vs TEMPERATURE
V
VSD=8V
0
−
40−20010040608020
BUFFEROFFSET VOLTAGEvs TEMPERAT U RE
25
PDS limits are ±25mV
20
15
10
5
0
−5
25
−40−20010040608020
S
= 18V
(V
Temperature (_C)
Figure 1
=18V,VSD=5V)
S
Temperature (_ C)
Figure 3
50
A)
40
µ
30
20
10
Digital Supply Current (
DIGITA LSUPPLY CURRENT vs TEMPERATURE
VSD=5V
VSD=2V
0
−
40−20010040608020
Temperature (_C)
Figure 2
20
18
16
14
12
(V)
10
OUT
V
8
6
4
2
0
OUTPUT VOLTAGEvs OUTPUT CURRENT
V
= 18V
S
Sourcing, Code = 3FFh
Sinking, Code = 000h
0251005075
(mA)
I
OUT
Figure 4
INTEGRAL NONLINEARITY ERROR vs INPUT CODE
1.5
1.0
0.5
0
−
INL Error(L SB)
0.5
−
1.0
10 Typical Units Shown
−
1.5
01282563845121024
Input Code
640768896
Figure 5
1.5
1.0
0.5
0
−
0.5
DNL Error (LSB)
−
1.0
−
1.5
01282563845121024
DIFFERENTIAL NONLINEARITY ERROR
vs INPUT CODE
10 Typical Units Shown
640768896
Input Decimal Code
Figure 6
4
www.ti.com
SBOS337A − OCTOBER 2006 − REVISED OCTOBER 2006
TYPICAL CHARACTERISTICS (cont)
At TA = +25°C, VS = 18V , VSD = 5V , RL = 1.5kΩ connected to ground, and CL = 200pF, unless otherwise noted.
V
BUFFER SLEW RATE
COM
(1) V
BIAS
(2) V
COM
5V/div
12
5V/div
BUFFER LARGE SIGNAL STEP RESPONSE
(2) V
COM
(1) V
BIAS
"#$%&$$
"#$%&$%
12
100mA/div500mV/div
1
Time (1µs/div)
Figure 7
LOAD REGULATION vs CAPACITANCE
C=0.1µF
C=1µF
C=10µF
Time (1µs/div)
Figure 9
LOAD REGULATION WITH 100µF CAPACITOR
Time (1µs/div)
Figure 8
LOAD REGULATION vs CAPACITANCE
1
2.7nF
C
1
2
Ω
2.7nF
10
C
100mA/div500mV/div
C=1µF
2
C=0.1µF
C=10µF
C=1µF
1
C=10µF
Time (1µs/div)
Figure 10
LOAD REGULATION WITH 10µFCAPACITOR
1
2.7nF
100µF
1
2.7nF
10µF
1
20mV/div100mA/div
Time (1µs/div)
Figure 11
1
50mV/div100mA/div
Time (1µs/div)
Figure 12
5
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"#$%&$%
SBOS337A − OCTOBER 2006 − REVISED OCTOBER 2006
TYPICAL CHARACTERISTICS (cont)
At TA = +25°C, VS = 18V , VSD = 5V , RL = 1.5kΩ connected to ground, and CL = 200pF, unless otherwise noted.
www.ti.com
LOAD REGULATION WITH 1µFCAPACITOR
(C = 1µF, R
1
100mV/div100mA/div
=0,100mVRes.)
S
Time (1µs/div)
1
2.7nF
1µF
Figure 13
6
www.ti.com
"#$%&$$
"#$%&$%
SBOS337A − OCTOBER 2006 − REVISED OCTOBER 2006
APPLICATIONS INFORMATION
OVERVIEW
The BUF0190x family of products consists of a 10-bit digital-to-analog converter (DAC) that is programmed through
an industry-standard two-wire interface. It contains onchip nonvolatile memory that stores a specific DAC value
that is read at power-up. The BUF0190x family consists of
two devices: The BUF01900 contains a voltage buffer that
is capable of driving high-current; the BUF01901 is a lower-cost version without the buffer. The BUF0190x is especially well-suited for V
ever, it can also be used in many other applications.
Figure 14 shows the BUF01900 in a typical configuration.
calibration in LCD panels; how-
COM
V
S
0.1µF
10µF
+
V
COM
V
S
(1)
(2)
(2)
1
2
3
4
BUF01900
V
S
V
COM
V
BIAS
GND
BUF01900: ON-CHIP BUFFER
Unlike many programmable V
ket, the BUF01900 offers an integrated V
high current output drive capability. The output is capable
of delivering peak currents over 100mA to within 4V from
the positive supply and to within 2V from the negative supply. Using this option is very cost-ef fective and convenient
in systems that do not use multi-channel gamma buffers
with integrated V
drive. Figure 15 shows the
COM
BUF01900 in a typical configuration.
SDA
SCL
V
8
7
Ω
A
6
0
5
SD
10k
0.1µF
10k
Timing
Controller
Ω
V
calibrators on the mar-
COM
SD
buffer with
COM
Digital
2V to 5.5V
BUF01900
Program Command
SDA
(1) Optional −may be needed for stability.
NOTES:
(2) Optional −see application text for component selection.
Figure 14. Typical Application Diagram
Analog
7V to 18V
R
1
BIAS
Voltage
Regulator
Ω
4xOTP
ROM
Input Control Logic
SCL A0
Switch
Control
10−Bit
DAC
250k
V
COM
Buffer
R
2
V
COM
Panel
Figure 15. BUF01900 Typical Configuration
7
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"#$%&$%
SBOS337A − OCTOBER 2006 − REVISED OCTOBER 2006
www.ti.com
BUF01901: USING EXTERNAL V
COM
BUFFER
Many LCD panel modules use gamma buffers, such as
TI’s BUFxx704, BUFxx703, BUF11702 and the new
BUF11705, that already include an integrated V
COM
driver.
Some other LCD modules use more complicated compensation schemes that require an external high-speed
V
op amp. BUF01901 is optimized for lowest cost and
COM
is intended to be used with an external V
buffer or op
COM
amp. Figure 16 illustrates a typical configuration of the
BUF01901 with the BUF11705.
ON-CHIP NONVOLATILE MEMORY
The BUF0190x is optimized for the smallest die size available and consequently the lowest cost to support high vol-
ume production. The on-chip OTP (one-time-programmable) memory helps to achieve significant die size
reduction over EEPROM memory technology . This reduction is partly because of the smaller area of the OTP
memory cell, but also a result of the fact that an EEPROM
requires a high programming voltage typically generated
with an onboard charge pump. OTP memory technology
does not require the higher programming voltage; consequently, no charge pump is needed, resulting in a smaller
and lower-cost solution.
During production, the V
voltage is typically adjusted
COM
only once. However, to allow for programming errors and
rework, the BUF0190x supports a total of four write cycles
to the OTP memory. This capacity means that the previously programmed code in the OTP can be overwritten
a total of three times.
BUF11704
Digital
2V to 5.5V
BUF01901
Program Command
SDA
Voltage
Regulator
4xOTP
ROM
Input Control Logic
SCL A0
Switch
Control
Analog
7V to 18V
R
1
Ω
250k
10−Bit
DAC
BIAS
R
2
Figure 16. BUF01901 Typical Configuration
V
COM
Gamma
References
8
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