BOURNS TISP4300MMAJ, TISP4350MMAJ, TISP4360MMAJ, TISP4300MMBJ, TISP4350MMBJ Service Manual
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查询TISP4300MMAJR供应商
VERSIONS
*RoHS COMPLIANT
AVAILABLE
TISP4300MMAJ, TISP4350MMAJ, TISP4360MMAJ
TISP4300MMBJ, TISP4350MMBJ, TISP4360MMBJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP43xxMMAJ/BJ Overvoltage Protector Series
Specified for:
- ITU-T Recommendation K.21
10/700
AC Induction and Contact
- FCC Part 68 (TIA/EIA-IS-968)
Type A & B Surge
- UL 60950 and CSA 22.2 No.60950
Clause 6. Power Cross
- Telcordia GR-1089-CORE
2/10 and 10/1000
AC Induction and Contact
Applications:
TISP4300MM for:
POTS Solid-State Relay Modems
Protection Voltage .............................................................. 300 V
TISP4350MM for:
POTS Electro-mechanical Relay Modems
FCC Type B Ringer Voltage ............................................... 275 V
TISP4360MM for:
ADSL Modems
ADSL + Type B Ringer Voltage .......................................... 290 V
Ion-Implanted Breakdown Region
Precise and Stable Voltage
V
Device
‘4300 230 300
‘4350 275 350
‘4360 290 360
Available in SMA and SMB Packages
SMA Saves 25 % Placement Area Over SMB
FCC Part 68 Type A Surge Compliance by
Using Either a Fuse or 7 Ω Resistor
............................................ UL Recognized Components
DRM
V
V
(BO )
V
Description
These devices are designed to limit overvoltages on the telephone
line. Overvoltages are normally caused by a.c. power system or
lightning flash disturbances which are induced or conducted on to the
telephone line. A single device provides 2-point protection and is
typically used for the protection of 2-wire telecommunication
equipment (e.g. between the Ring and Tip wires for telephones and
modems). Combinations of devices can be used for multi-point
protection (e.g. 3-point protection between Ring, Tip and Ground).
SMA Package (Top View)
12R (B) T (A)
MDXXCCE
SMB Package (Top View)
T(A)R(B)
21
MDXXBGF
Device Symbol
T
SD4XAA
R
erminals T and R correspond to the
T
alternative line designators of A and B
Rated for International Surge Wave Shapes
I
Wave ShapeStandard
2/10 µs GR-1089-CORE 250
10/160 µsFCC Part 68 75
9/720 µs FCC Part 68 65
10/700 µsITU-T K.20/45/21 65
10/560 µsFCC Part 68 55
10/1000 µs GR-1089-CORE 50
TSP
A
How To Order
Device Package Carrier
TISP43xxMM
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
NOVEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
SMA/DO-214AC J-Bend ( AJ)
SMB/DO-214AA J- B end (BJ) TISP43xxMMBJR
Embossed Tape Reeled
(R)
For Standard
Te rmination Finish
Order As
TISP43xxMMAJR
For Lead Free
Te rmination Finish
Order As
TISP43xxMMAJR-S
TISP43xxMMBJR-S
TISP43xxMMAJ/BJ Overvoltage Protector Series
Description (Continued)
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.
This TISP43xxMM range consists of three voltage variants targeted at specific applications: ADSL, electro-mechanical hook switch and solid
state hook switch modems. These parts are guaranteed to voltage limit and withstand the listed international lightning surges in both
polarities. Two packages are available; SMB (JEDEC DO-214AA with J-bend leads) and SMA (JEDEC DO-214AC with J-bend leads). These
devices are supplied in embossed tape reel carrier pack. For alternative voltage and holding current values, consult the factory.
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating Symbol Value Unit
‘4300
Repetitive peak off-state voltage,
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave sha pe) 250
10/160 µs (FCC Part 68 (TIA/EIA-IS-968), 10/160 µs voltage wave shape) 75
5/320 µs (FCC Part 68 (TIA/EIA-IS-968), 9/720 µs voltage wave shape) 65
5/310 µs (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/45/21) 65
10/560 µs (FCC Part 68 (TIA/EIA-IS-968), 10/560 µs voltage wave shape) 55
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) 50
Non-repetitive peak on-state current (see Notes 2, 3 and 4)
20 ms (50Hz) full sine wave
1 s (50 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Junction temperature T
Storage temperature range T
‘4350
‘4360
V
I
DRM
I
TSP
TSM
J
stg
±230
±275
±290
18
7
1.6
-40 to +150 °C
-65 to +150 °C
V
A
A
NOTES: 1. For voltage values at lower temperatures derate at 0.13 %/°C.
2. Initially, the TISP43xxMM must be in thermal equilibrium with T
3. The surge may be repeated after the TISP43xxMM returns to its initial conditions.
4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected wi th 5 A rated pr inted wir ing
track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C.
= 25 °C.
J
Overload Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating Symbol Value Unit
Peak overload on-state current, Type A impulse (see Note 5)
10/160 µs
10/560 µs
Peak overload on-state current, a.c. power cross tests UL 60950 (see Note 5) I
NOTE 5: These electrical stress levels may damage the TISP43xxMM silicon chip. After test, the pass criterion is either that the device is
functional or, if it is faulty, that it has a short circuit fault mode. In the short circuit fault mode, the following equipment is protected
as the device is a permanent short across the line. The equipment would be unprotected if an open circuit fault mode developed.
Customers should verify actual device performance in their specific applications.
I
T(OV)M
T(OV)M
NOVEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
200
100
See Figure 10
for current
versus time
A
A
TISP43xxMMAJ/BJ Overvoltage Protector Series
Recommended Operating Conditions
Component Min Typ Max Unit
series resistor for FCC Part 68, 10/160, 10/560 type A surge survival 13
series resistor for FCC Part 68, 9/720 type B surge survival 0
series resistor for GR-1089-CORE first-level and second-level surge survival 15
R
S
series resistor for K.20, K.21 and K.45 1.5 kV, 10/700 surge sur vival 0 Ω
series resistor for K.21 coordination with a 400 V primary protector 6.6
Electrical Characteristics for the R and T Terminals, TA = 25 °C (Unless Otherwise Noted)
Parameter Test Conditions Min Typ Max Unit
I
DRM
V
(BO)
I
(BO)
I
H
dv/dt
I
D
I
D
C
off
Repetitive peak off-
state current
Breakover voltage dv/dt = ±250 V/ms, R
Breakover current dv/dt = ± 250 V/ms, R
V
= V
D
DRM
= 300
= 300
Ω
Ω
SOURCE
SOURCE
Holding current IT= ±5A, di/dt=-/+30mA/ms ±0.15 ±0.6 A
Critical rate of rise of
off-state voltage
Off-state current
Linear voltage ramp, Maximum ramp value < 0.85V
‘4300, V
‘4350, V
‘4360, V
= ±207 V
D
= ±248 V
D
= ±261 V
D
DRM
Off-state current VD = ±50 V ±10 ±10
Off-stat e capacitance
f = 1 MHz, V = 1 V rms, V
f = 1 MHz, V = 1 V rms, V = ±50 V
d
d
= ±1 V
D
D
TA = 25 °C
T
= 85 °C
A
‘4300
‘4350
‘4360
Ω
Ω
Ω
Ω
±5
±10
µA
±300
±350
V
±360
±0.8 A
±5 kV/µs
±2 µA
40
18
pF
Thermal Characteristics
Parameter Min Typ Max Unit
Junction to free air thermal resistance
R
θJA
EIA/JESD51-3 PCB, I
T
= 25 °C, (see N ote 6)
A
265 mm x 210 mm populated line card,
4-layer PCB, I
Test Conditions
= I
T
TSM( 1000 )
= I
T
TSM( 1000)
, TA = 25 °C
,
115
°C/W
52
NOTE 6: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
NOVEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP43xxMMAJ/BJ Overvoltage Protector Series
Parameter Measurement Information
-v
I
DRM
I
(BO)
V
Quadrant III
Switching
Characteristic
(BO)
+i
I
TSP
Characteristic
I
TSM
I
T
V
T
I
H
V
DRM
V
D
I
D
I
D
I
H
V
T
I
T
I
TSM
I
TSP
V
D
-i
Quadrant I
Switching
V
DRM
V
(BO)
I
DRM
PMXXAAB
I
(BO)
+v
Figure 1. Voltage-current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
Customers should verify actual device performance in their specific applications.
Specifications are subject to change without notice.
NOVEMBER 2001 - REVISED FEBRUARY 2005
TISP43xxMMAJ/BJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT
vs
0·1
| - Off-State Current - µA
D
0·01
|I
0·001
JUNCTION TEMPERATURE
10
VD = ±50 V
1
-25 0 25 50 75 100 125 150
TJ - Junction Temperature - °C
TC4LAG
Figure 2.
ON-ST ATE CURRENT
vs
ON-ST ATE VOLTA G E
50
40
TA = 25 °C
30
t
= 100 µs
W
20
15
10
7
5
4
3
- On-State Current - A
2
T
I
1.5
1
0.7
0.5
0.7 1.5 2 3 4 5 7110
VT - On-State Voltage - V
TC4MAN
Figure 4.
NOVEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
1.15
1.10
1.05
1.00
Normalized Breakover Voltage
0.95
0.90
-25 0 25 50 75 100 125 150
TJ - Junction Temperature - °C
Figure 3.
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
2.0
1.5
1.0
0.9
0.8
0.7
0.6
Normalized Holding Current
0.5
0.4
-25 0 25 50 75 100 125 150
TJ - Junction Temperature - °C
Figure 5.
TC4LAF
TC4LAD
TISP43xxMMAJ/BJ Overvoltage Protector Series
Typical Characteristics
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
1
0.9
0.8
0.7
= 0
D
0.6
0.5
0.4
0.3
Capacitance Normalized to V
0.2
0.5 1 2 3 5 10 20 30 50 100150
VD - Off-state V oltage - V
TJ = 25 °C
= 1 Vrms
V
d
Figure 6.
TC4LAH
TYPICAL CAP A CIT ANCE ASYMMETRY
vs
OFF-STATE VOLT AGE
1
Vd = 10 mV rms, 1 MHz
| — Capacitance Asymmetry – pF
off(-VD)
- C
Vd = 1 V rms, 1 MHz
off(+VD)
|C
0
23457 20304050110
VD — Off-State Volta ge – V
Figure 7.
TC4LBB
NOVEMBER 2001 - REVISED FEBRUARY 2005
Customers should verify actual device performance in their specific applications.
Specifications are subject to change without notice.
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