BOCA TIP42B, TIP42C, TIP41A, TIP41, TIP42A Datasheet

3

IS / IECQC 700000
IS / IECQC 750100

TO-220 Plastic Package

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Boca Semiconductor Corp (BSC)

TIP41, TIP41A, TIP41B, TIP41C
TIP42, TIP42A, TIP42B, TIP42C

TIP 41, 41A, 41B, 41C NPN PLASTIC POWER TRANSISTORS
TIP 42, 42A, 42B, 42C PNP PLASTIC POWER TRANSISTORS

General Purpose Amplifier and Switching Applications

C

B

F

H

A

1

N

L

23

K

D

G

E

OO

J

M

ABSOLUTE MAXIMUM RATINGS

Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Collector current I
Total power dissipation up to T

= 25°C P

C

Junction temperature T
Collector-emitter saturation voltage

= 6 A; IB = 0.6 A V

I

C

D.C. current gain

= 3 A; VCE = 4 V h

I

C

PIN CONFIGURATION

1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

1

2

DIM MIN. MAX.

A 14. 42 16.51
B 9.63 10. 67
C 3.56 4.83
D0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43

J0.56
K 12. 70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
ODEG 7

All diminsions in mm.

41 41A 41B 41C
42 42A 42B 42C

CBO
CEO

C

tot
j

CEsat

FE

max. 40 60 80 100 V
max. 40 60 80 100 V
max. 6.0 A
max. 65 W
max. 150 °C

max. 1.5 V

min. 15
max. 75

4

RATINGS (at T

=25°C unless otherwise specified)

A

Limiting values 42 42A 42B 42C
Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current I

CBO
CEO
EBO

C

41 41A 41B 41C

max. 40 60 80 100 V
max. 40 60 80 100 V
max. 5.0 V
max. 6.0 A

TIP41, TIP41A, TIP41B, TIP41C

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TIP42, TIP42A, TIP42B, TIP42C

Collector current (Peak value) I
Base current I
Total power dissipation up to T

= 25°C P

C

CM
B

tot

max. 10 A
max. 2.0 A

max. 65 W
Derate above 25°C max. 0.52
Total power dissipation up to TA= 25°C P

tot

max. 2.0 W
Derate above 25°C max. 0.016
Junction temperature T
Storage temperature T

j

stg

max. 150 °C

–65 to +150

THERMAL RESISTANCE

From junction to ambient R
From junction to case R

th j–a
th j–c

62.5

1.92

CHARACTERISTICS

T

= 25°C unless otherwise specified

amb

41 41A 41B 41C
42 42A 42B 42C

Collector cutoff current

= 0; VCE = 30 V I

I

B

= 0; VCE = 60 V I

I

B

= 0; VCE = V

V

BE

CEO

CEO
CEO

I

CES

max. 0.7 0 . 7 – – m A

max. – – 0.7 0. 7 mA

max. 0.4 mA
Emitter cut-off current

I

= 0; VEB = 5 V I

C

EBO

max. 1.0 mA
Breakdown voltages

= 30 mA; IB = 0 V

I

C

= 1 mA; IE = 0 V

I

C

I

= 1 mA; IC = 0 V

E

CEO(sus)
CBO
EBO

* min. 40 60 80 100 V

min. 40 60 80 100 V

min. 5.0 V
Saturation voltage

= 6 A; IB = 0.6 A V

I

C

* max. 1.5 V

CEsat

Base-emitter on voltage

= 6 A; VCE = 4 V V

I

C

* max. 2.0 V

BE(on)

D.C. current gain

I

= 0.3 A; VCE = 4 V hFE* min. 30

C

W/°C

W/°C

ºC

°C/W
°C/W

= 3 A; VCE = 4 V h

I

C

FE*

Small-signal current gain

I

= 0.5 A; VCE = 10 V; f = 1 KHz |hfe| min. 20

C

Transition frequency

= 0.5 A; VCE = 10 V; f = 1 MHz f

I

C

T

* Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2%.
(1) f

= |hfe|• f

T

test

min. 15

max. 75

min. (1) 3 MHz