BOCA TIP32C, TIP32, TIP32B, TIP32A, TIP31A Datasheet

3

IS / IECQC 700000
IS / IECQC 750100

TO-220 Plastic Package

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Boca Semiconductor Corp. (BSC)

TIP31, TIP31A, TIP31B, TIP31C
TIP32, TIP32A, TIP32B, TIP32C

TIP31, 31A, 31B, 31C NPN PLASTIC POWER TRANSISTORS
TIP32, 32A, 32B, 32C PNP PLASTIC POWER TRANSISTORS

General Purpose Amplifier and Switching Applications

C

B

F

E

H

A

O

1

N

23

L

O

K

D

G

ABSOLUTE MAXIMUM RATINGS

Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Collector current I
Total power dissipation up to T
Junction temperature T
Collector-emitter saturation voltage

I

= 3 A; IB = 375 mA V

C

D.C. current gain

= 3 A; VCE = 4 V h

I

C

J

M

= 25°C P

C

PIN CONFIGURATION

1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN. MA X.

All diminsions in mm .

CBO
CEO

C

tot
j

CEsat

FE

1

2

A 14.42 16.51
B 9.63 10.67
C 3.5 6 4.8 3
D0.90
E 1 .1 5 1.4 0
F 3.7 5 3.8 8
G 2 .2 9 2.7 9
H 2.5 4 3.4 3

J0.56
K 12.70 14.73
L 2.8 0 4.0 7
M 2.0 3 2.9 2
N 31.24
ODEG 7

31 31A 31B 31C
32 32A 32B 32C

max. 40 60 80 100 V
max. 40 60 80 100 V
max. 3.0 A
max. 40 W
max. 150 °C

max. 1.2 V

min. 10
max. 50

4

RATINGS (at T
Limiting values 31 31A 31B 31C

Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V

=25°C unless otherwise specified)

A

CBO
CEO
EBO

32 32A 32B 32C

max. 40 60 80 100 V
max. 40 60 80 100 V
max. 5.0 V

TIP31, TIP31A, TIP31B, TIP31C

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TIP32, TIP32A, TIP32B, TIP32C

Collector current I
Collector current (Peak) I
Base current I
Total power dissipation upto T

=25°C P

C

C
CM
B

tot

max. 3 .0 A
max. 5 .0 A
max. 1 .0 A
max. 40 W

Derate above 25°C max 0.32
Total power dissipation upto TA=25°C P

tot

max. 2 W

Derate above 25°C max 0.016
Junction temperature T
Storage temperature T

j
stg

max. 150 °C

–65 to +150 ºC

THERMAL RESISTANCE

From junction to case R
From junction to ambient R

th j–c
th j–a

3.125 °

62.5 °

CHARACTERISTICS

= 25°C unless otherwise specified

T

amb

31 31A 31B 31C
32 32A 32B 32C

Collector cutoff current

= 0; VCE = 30V I

I

B

= 0; VCE = 60V I

I

B

= 0; VCE = V

V

BE

CEO(max)

CEO
CEO

I

CES

max. 0.3 0.3 – – mA
max. – – 0.3 0.3 mA
max. 0 .2 mA

Emitter cut-off current

= 0; VEB = 5 V I

I

C

EBO

max. 1 .0 mA

Breakdown voltages

= 30 mA; IB = 0 V

I

C

= 1 mA; IE = 0 V

I

C

= 1 mA; IC = 0 V

I

E

CEO(sus)
CBO
EBO

* min. 40 60 80 100 V

min. 40 60 80 100 V
min. 5.0 V

Saturation voltage

= 3 A; IB = 375 mA V

I

C

* max. 1.2 V

CEsat

Base emitter on voltage

= 3 A; VCE = 4 V V

I

C

* max. 1 .8 V

BE(on)

D.C. current gain

= 1 A; VCE = 4 V hFE* min. 25

I

C

I

= 3 A; VCE = 4 V hFE* min. 10

C

max. 50

Small-signal current gain

= 0.5A; VCE = 10V; f = 1 KHz |hfe| min. 20

I

C

Transition frequency

= 0.5A; VCE = 10V; f = 1 MHz fT (1) min. 3 MHz

I

C

W/°C

W/°C

C/W
C/W

* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%.

= |hfe|• f

(1) f

T

test