BOCA TIP29B, TIP29A, TIP29C, TIP30B, TIP30A Datasheet

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IS / IECQC 700000
IS / IECQC 750100

TO-220 Plastic Package

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Boca Semiconductor Corp. BSC

TIP29, TIP29A, TIP29B, TIP29C
TIP30, TIP30A, TIP30B, TIP30C

TIP29, 29A, 29B, 29C NPN PLASTIC POWER TRANSISTORS
TIP30, 30A, 30B, 30C PNP PLASTIC POWER TRANSISTORS

General Purpose Amplifier and Switching Applications

PIN CONFIGURATION

1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

C

B

F

E

H

A

O

1

N

23

L

O

K

D

G

ABSOLUTE MAXIMUM RATINGS

Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Collector current I
Total power dissipation up to T
Junction temperature T
Collector-emitter saturation voltage

I

= 1 A; IB = 125 mA V

C

D.C. current gain

I

= 1 A; VCE = 4 V h

C

J

M

= 25°C P

C

CBO
CEO

C

tot
j

CEsat

FE

DIM MIN. MA X.

A 14.42 16.51
B 9.63 10.67
C 3.5 6 4.8 3
D0.90
E 1 .1 5 1.4 0
F 3.7 5 3.8 8
G 2 .2 9 2.7 9
H 2.5 4 3.4 3

J0.56
K 12.70 14.73
L 2.8 0 4.0 7
M 2.0 3 2.9 2
N 31.24
ODEG 7

All diminsions in mm.

29 29A 29B 29C
30 30A 30B 30C

max. 40 60 80 100 V
max. 40 60 80 100 V
max. 1.0 A
max. 30 W
max. 150 °C

max. 0.7 V

min. 15
max. 75

RATINGS (at T
Limiting values 29 29A 29B 29C

Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V

=25°C unless otherwise specified)

A

CBO
CEO

max. 40 60 80 100 V
max. 40 60 80 100 V

30 30A 30B 30C

TIP29, TIP29A, TIP29B, TIP29C

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TIP30, TIP30A, TIP30B, TIP30C

Emitter-base voltage (open collector) V
Collector current I
Collector current (Peak) I
Base current I
Total power dissipation upto T

=25°C P

C

EBO
C
CM
B

tot

max. 5 .0 V
max. 1 .0 A
max. 3 .0 A
max. 0 .4 A

max. 30 W
Derate above 25°C max. 0.24
Total power dissipation upto TA=25°C P

tot

max. 2 W
Derate above 25°C max. 0.016
Junction temperature T
Storage temperature T

j
stg

max. 150 °C

–65 to +150

THERMAL RESISTANCE

From junction to ambient R
From junction to case R

th j–a
th j–c

62.5 °

4.167 °

CHARACTERISTICS

= 25°C unless otherwise specified

T

amb

29 29A 29B 29C
30 30A 30B 30C

Collector cutoff current

= 0; VCE = 30V I

I

B

= 0; VCE = 60V I

I

B

= 0; VCE = V

V

EB

CEO

CEO
CEO

I

CES

max. 0.3 0.3 – – mA

max. – – 0. 3 0.3 mA

max. 0 .2 mA
Emitter cut-off current

= 0; VEB = 5 V I

I

C

EBO

max. 1 .0 mA
Breakdown voltages

= 30 mA; IB = 0 V

I

C

= 1 mA; IE = 0 V

I

C

= 1 mA; IC = 0 V

I

E

* min. 40 60 80 100 V

CEO(sus)
CBO
EBO

min. 40 60 80 100 V

min. 5.0 V
Saturation voltages

= 1 A; IB = 125 mA V

I

C

* max. 0.7 V

CEsat

Base emitter on voltage

= 1 A; VCE = 4 V V

I

C

* max. 1. 3 V

BE(on)

D.C. current gain

= 0.2 A; VCE = 4 V hFE* min. 40

I

C

I

= 1 A; VCE = 4 V hFE* min. 15

C

max. 75
Small-signal current gain

= 0.2A; VCE = 10V; f = 1 KHz h

I

C

fe

min. 20
Transition frequency

= 0.2A; VCE = 10V; f = 1 MHz fT (2) min. 3 MHz

I

C

W/°C

W/°C

ºC

C/W
C/W

* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%.
(2) f

= |hfe|• f

T

test

.