BOCA TIP125, TIP121, TIP120, TIP122, TIP127 Datasheet

3

IS / IECQC 700000
IS / IECQC 750100

TO-220 Plastic Package

Boca Semiconductor Corp.

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TIP120, TIP121, TIP122
TIP125, TIP126, TIP127

TIP120, 121, 122 NPN PLASTIC POWER TRANSISTORS
TIP125, 126, 127 PNP PLASTIC POWER TRANSISTORS

Power Darlingtons for Linear and Switching Applications

C

B

F

E

H

A

O

1

N

23

L

O

K

D

G

ABSOLUTE MAXIMUM RATINGS

Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Collector current I
Total power dissipation up to T
Junction temperature T
Collector-emitter saturation voltage

= 3 A; IB = 12 mA V

I

C

D.C. current gain

= 0.5 A; VCE = 3 V h

I

C

J

M

= 25°C P

C

PIN CONFIGURATION

1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

1

2

DIM MIN. MA X.

A 14.42 16.51
B 9.63 10.67
C 3.5 6 4.83
D0.90
E 1 .1 5 1.40
F 3.7 5 3.88
G 2 .2 9 2.7 9
H 2.5 4 3 .4 3

J0.56
K 12.70 14.73
L 2.8 0 4.0 7
M 2.0 3 2.9 2
N 31.24
ODEG 7

All diminsions in mm .

120 121 122
125 126 127

max. 60 80 100 V

CBO

max. 60 80 100 V

CEO

CEsat

max. 5.0 A
max. 65 W
max. 150 °C

max. 2.0 V

min. 1.0

C

tot
j

FE

4

RATINGS (at T

Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V

=25°C unless otherwise specified) 120 121 122

A

CBO
CEO
EBO

125 126 127

max. 60 80 100 V
max. 60 80 100 V
max. 5.0 V

TIP120, TIP121, TIP122

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Boca Semiconductor Corp.

BSC

TIP125, TIP126, TIP127

Collector current I
Collector current (peak) I
Base current I
Total power dissipation up to T
Derate above 25°C max 0.52
Total power dissipation up to TA = 25°C P
Derate above 25°C max 0.016
Junction temperature T
Storage temperature T

THERMAL RESISTANCE

From junction to ambient R
From junction to case R

CHARACTERISTICS

= 25°C unless otherwise specified 120 121 122

T

amb

Collector cutoff current

= 0; VCB = 60 V I

I

E

= 0; VCB = 80 V I

I

E

= 0; VCB = 100 V I

I

E

= 0; VCE = 30V I

I

B

= 0; VCE = 40V I

I

B

= 0; VCE = 50V I

I

B

Emitter cut-off current

= 0; VEB = 5 V I

I

C

Breakdown voltages

= 100 mA; IB = 0 V

I

C

= 1 mA; IE = 0 V

I

C

= 1 mA; IC = 0 V

I

E

Saturation voltages

= 3.0 A; IB = 12 mA V

I

C

= 5.0 A; IB = 20 mA V

I

C

Base-emitter on voltage

= 3A; VCE = 3V V

I

C

D.C. current gain

= 0.5A; VCE = 3V hFE* min. 1.0

I

C

= 3A; VCE = 3V min. 1 .0

I

C

Small signal current gain

= 3A; VCE = 4V; f = 1 MHz |hfe| min. 4.0

I

C

Output capacitance at f = 0.1 MHz

= 0; VCB = 10V PNP C

I

E

= 25°C P

C

NPN C

C
CM
B

tot

tot

j

stg

th j–a
th j–c

CBO
CBO
CBO
CEO
CEO
CEO

EBO

CEO(sus)
CBO
EBO

* max. 2. 0 V

CEsat

* max. 4. 0 V

CEsat

* max. 2.5 V

BE(on)

o
o

max. 5.0 A
max. 8 A
max. 120 mA
max. 65 W

max. 2 W

max. 150 °C

–65 to +150 º

62.5 °

1.92 °

125 126 127

max. 0.2 – – mA
max. – 0.2 – m A
max. – – 0. 2 m A
max. 0.5 – – mA
max. – 0.5 – m A
max. – – 0. 5 m A

max. 2.0 mA

* min. 60 80 100 V

min. 60 80 100 V
min. 5.0 V

max. 300 pF
max. 200 pF

W/°C

W/°C

C

C/W
C/W

* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%.