3
IS / IECQC 700000
IS / IECQC 750100
TO-220 Plastic Package
Boca Semicondcutor Corp.
BSC
http://www.bocasemi.com page: 1
TIP100, TIP101, TIP102
TIP105, TIP106, TIP107
TIP100, 101, 102 NPN PLASTIC POWER TRANSISTORS
TIP105, 106, 107 PNP PLASTIC POWER TRANSISTORS
Power Darlingtons for Linear and Switching Applications
C
B
F
E
H
A
O
1
N
23
L
O
K
D
G
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Collector current I
Total power dissipation up to T
Junction temperature T
Collector-emitter saturation voltage
= 3 A; IB = 6 mA V
I
C
D.C. current gain
= 3 A; VCE = 4 V h
I
C
J
M
= 25°C P
C
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
DIM MIN. MA X.
A 14.42 16.51
B 9.63 10.67
C 3.5 6 4.83
D0.90
E 1 .1 5 1.40
F 3.7 5 3.88
G 2 .2 9 2.7 9
H 2.5 4 3 .4 3
J0.56
K 12.70 14.73
L 2.8 0 4.0 7
M 2.0 3 2.9 2
N 31.24
ODEG 7
All diminsions in mm .
100 101 102
105 106 107
max. 60 80 100 V
CBO
max. 60 80 100 V
CEO
CEsat
max. 8.0 A
max. 80 W
max. 150 °C
max. 2.0 V
min. 1.0 K
max. 20 K
C
tot
j
FE
4
RATINGS (at T
Limiting values 100 101 102
Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
=25°C unless otherwise specified)
A
CBO
CEO
EBO
max. 60 80 100 V
max. 60 80 100 V
max. 5.0 V
105 106 107
TIP100, TIP101, TIP102
http://www.bocasemi.com page: 2
TIP105, TIP106, TIP107
Collector current I
Collector peak current I
Base current I
Total power dissipation up to T
= 25°C P
C
C
CM
B
tot
max. 8.0 A
max. 15 A
max. 1.0 A
max. 80 W
Derate above 25°C max 0.64 W/°C
Total power dissipation up to T
= 25°C P
A
tot
max. 2.0 W
Derate above 25°C max 0.016 W/°C
Junction temperature T
Storage temperature T
j
stg
max. 15 0 °C
–65 to +150 °
C
THERMAL RESISTANCE
From junction to ambient R
From junction to case R
th j–a
th j–c
62.5 °
1.56 °
C/W
C/W
CHARACTERISTICS
= 25°C unless otherwise specified
T
amb
100 101 102
105 106 107
Collector cutoff current
= 0; VCE = 30 V I
I
B
= 0; VCE = 40 V I
I
B
= 0; VCE = 50 V I
I
B
= 0; VCB = 60V I
I
E
= 0; VCB = 80V I
I
E
= 0; VCB = 100V I
I
E
CEO
CEO
CEO
CBO
CBO
CBO
max. 50 – – µA
max. – 50 – µA
max. – – 50 µA
max. 50 – – µA
max. – 50 – µA
max. – – 50 µA
Emitter cut-off current
= 0; VEB = 5 V I
I
C
EBO
max. 8 mA
Breakdown voltages
= 30 mA; IB = 0 V
I
C
= 1 mA; IE = 0 V
I
C
= 1 mA; IC = 0 V
I
E
CEO(sus)
CBO
EBO
* min. 60 80 100 V
min. 60 80 100 V
min. 5.0 V
Saturation voltages
= 3 A; IB = 6 mA V
I
C
= 8 A; IB = 80 mA V
I
C
* max. 2.0 V
CEsat
* max. 2.5 V
CEsat
Base-emitter on voltage
= 8 A; VCE = 4 V V
I
C
* max. 2.8 V
BE(on)
D.C. current gain
= 3 A; VCE = 4 V hFE* min. 1.0 K
I
C
max. 20 K
= 8 A; VCE = 4 V hFE* min. 200
I
C
Small signal current gain
= 3A; VCE = 4V; f = 1.0 MHz |hfe| min. 4.0
I
C
Output capacitance f = 0.1 MHz
= 0; VCB = 10V, PNP C
I
E
o
max. 30 0 pF
NPN max. 20 0 pF
Forward voltage of commutation diode
= –IC = 10A; IB = 0 VF* max. 2.8 V
I
F
* Pulsed: pulse duration = 300 µs; duty cycle ≤ 2%.
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